B. Davari

2.3k citations

69 papers · 1.4k · h-index 18

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Low-power high-performance VLSI design
- Silicon Carbide Semiconductor Technologies
- Silicon and Solar Cell Technologies
Hardware and Architecture top 5%

Papers in

Electrical and Electronic Engineering 62
- Semiconductor materials and devices 49
- Advancements in Semiconductor Devices and Circuit Design 48
- Integrated Circuits and Semiconductor Failure Analysis 29
- Low-power high-performance VLSI design 15
- Silicon and Solar Cell Technologies 4
Atomic and Molecular Physics, and Optics 19
- Semiconductor materials and interfaces 11

Co-authors: G. Shahidi (27 shared papers)R.H. Dennard (12 shared papers)M.R. Wordeman (9 shared papers)J.Y.-C. Sun (10 shared papers)P. Das (12 shared papers)Wei‐Hsu Chang (4 shared papers)Chen-Hsuan Hsu (2 shared papers)Ching-Fang Hsu (2 shared papers)
Journals: IEEE Electron Device Letters (6 papers)Applied Physics Letters (4 papers)IEEE Transactions on Electron Devices (4 papers)IBM Journal of Research and Development (3 papers)Solid-State Electronics (3 papers)
Partner nations: United States Japan Italy

In The Last Decade

B. Davari

67 papers receiving 1.3k citations

Peers

Countries citing papers authored by B. Davari

Since Specialization

Citations

This map shows the geographic impact of B. Davari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Davari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Davari more than expected).

Fields of papers citing papers by B. Davari

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Davari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Davari. The network helps show where B. Davari may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Davari, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Davari Line = papers co-authored together B. Davari links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	CMOS scaling for high performance and low power-the next ten years Proceedings of the IEEE ·B. Davari, R.H. Dennard, G. Shahidi	1995	295
2	A new 'shift and ratio' method for MOSFET channel-length extraction IEEE Electron Device Letters ·(unknown), D.S. Zicherman, D.R. Lombardi, P.J. Restle, Chen-Hsuan Hsu, H.I. Nanafi, M.R. Wordeman, B. Davari, G. Shahidi	1992	180
3	A high-performance 0.25- mu m CMOS technology. II. Technology IEEE Transactions on Electron Devices ·B. Davari, Wei‐Hsu Chang, Karen Petrillo, C. Y. Wong, D. Moy, (unknown), M.R. Wordeman, J.Y.-C. Sun, Ching-Fang Hsu, M.R. Polcari	1992	87
4	A room temperature 0.1 μm CMOS on SOI IEEE Transactions on Electron Devices ·G. Shahidi, Clint Anderson, B.A. Chappell, T.I. Chappell, J.H. Comfort, B. Davari, R.H. Dennard, R. Franch, P.A. McFarland, J.S. Neely, T.H. Ning, M.R. Polcari, J.D. Warnock	1994	66
5	A high-performance 0.25- mu m CMOS technology. I. Design and characterization IEEE Transactions on Electron Devices ·Wei‐Hsu Chang, B. Davari, M.R. Wordeman, (unknown), Ching-Fang Hsu, Manuel de León Rodríguez	1992	66
6	Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs IEEE Electron Device Letters ·G. Shahidi, B. Davari, T. Bucelot, Paul Ronsheim, P. Coane, S. A. Pollack, C. Blair, Bill Clark, H. Hansen	1993	63
7	A 480-MHz RISC microprocessor in a 0.12-μm L/sub eff/ CMOS technology with copper interconnects IEEE Journal of Solid-State Circuits ·C. Akrout, Jörg Bialas, M. Canada, D. Cawthron, Jamie Corr, B. Davari, Raymond E. Floyd, S. Geißler, R. Goldblatt, R. Houle, P. Kartschoke, Doug Kramer, P. McCormick, Norman J. Rohrer, G. Salem, R. Schulz, L.T. Su, L. Whitney	1998	55
8	Source—Drain contact resistance in CMOS with self-aligned TiSi₂ IEEE Transactions on Electron Devices ·Yuan Taur, J.Y.-C. Sun, D. Moy, L.K. Wang, B. Davari, S. P. Klepner, C. Y. Ting	1987	48
9	Doping of n+ and p+ polysilicon in a dual-gate CMOS process C. Y. Wong, J.Y.-C. Sun, Yuan Taur, C. S. Oh, R. Angelucci, B. Davari	1988	46
10	CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications IBM Journal of Research and Development ·G. Shahidi, J.D. Warnock, J.H. Comfort, S.E. Fischer, P.A. McFarland, A. Acovic, T.I. Chappell, B.A. Chappell, T.H. Ning, C.J. Anderson, R.H. Dennard, J.Y.-C. Sun, M.R. Polcari, B. Davari	1995	33
11	High-performance devices for a 0.15- mu m CMOS technology IEEE Electron Device Letters ·G. Shahidi, J. Warnock, S.E. Fischer, P.A. McFarland, A. Acovic, S. Subbanna, E. Ganin, E.F. Crabbé, J.H. Comfort, J.Y.-C. Sun, T.H. Ning, B. Davari	1993	26
12	Partially-depleted SOI technology for digital logic G. Shahidi, A. Ajmera, F. Assaderaghi, R. Bolam, E. Leobandung, W. Rausch, D. Sankus, D. Schepis, L. Wagner, Kun Wu, B. Davari	2003	25
13	Transient pass-transistor leakage current in SOI MOSFET's IEEE Electron Device Letters ·F. Assaderaghi, G. Shahidi, L. Wagner, Meng-Yen Hsieh, M.M. Pelella, S. Chu, R.H. Dennard, B. Davari	1997	24
14	A novel high-performance lateral bipolar on SOI G. Shahidi, D.D. Tang, B. Davari, (unknown), P.A. McFarland, K.A. Jenkins, D. A. Danner, Manuel de León Rodríguez, A.C. Megdanis, E. Petrillo, M.R. Polcari, T.H. Ning	2002	22
15	A 7.9/5.5 psec room/low temperature SOI CMOS F. Assaderaghi, W. Rausch, A. Ajmera, E. Leobandung, D. Schepis, L. Wagner, H.-J. Wann, R. Bolam, D. S. Yee, B. Davari, G. Shahidi	2002	20
16	Semiconductor surface characterization using transverse acoustoelectric voltage versus voltage measurements Journal of Applied Physics ·B. Davari, P. Das, R. Bharat	1983	19
17	Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation E. Leobandung, M. Sherony, J.W. Sleight, R. Bolam, F. Assaderaghi, S. Wu, D. Schepis, A. Ajmera, W. Rausch, B. Davari, G. Shahidi	2002	19
18	Nondestructive evaluation of the semiconductor interface states' density using the transverse acoustoelectric voltage Solid-State Electronics ·B. Davari, (unknown), T. Liu, P. Das	1986	18
19	Boron redistribution in arsenic-implanted silicon and short-channel effects in metal–oxide–semiconductor field effect transistors Applied Physics Letters ·D. K. Sadana, A. Acovic, B. Davari, Detlev Grützmacher, H.I. Hanafi, F. Cardone	1992	15
20	Saturation transconductance of deep-submicron-channel MOSFETs Solid-State Electronics ·(unknown), Chen-Hsuan Hsu, Bing-Chen Wu, R.A. Kiehl, B. Davari, G. Shahidi	1993	14

About B. Davari

B. Davari is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Hardware and Architecture and Computer Networks and Communications, having authored 69 papers that have together received 1.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (49 papers), Advancements in Semiconductor Devices and Circuit Design (48 papers), Integrated Circuits and Semiconductor Failure Analysis (29 papers), Low-power high-performance VLSI design (15 papers), Semiconductor materials and interfaces (11 papers), Acoustic Wave Resonator Technologies (6 papers), Silicon and Solar Cell Technologies (4 papers) and Near-Field Optical Microscopy (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Hardware and Architecture (117 citations), Atomic and Molecular Physics, and Optics (215 citations), Biomedical Engineering (210 citations) and Computer Networks and Communications (39 citations). B. Davari has collaborated with scholars based in United States, Japan and Italy. Frequent co-authors include G. Shahidi, R.H. Dennard, M.R. Wordeman, J.Y.-C. Sun, P. Das, Wei‐Hsu Chang, Chen-Hsuan Hsu, Ching-Fang Hsu, P.J. Restle and M.R. Polcari. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Electron Devices, IBM Journal of Research and Development and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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