A. Acovic

479 citations

37 papers · 357 · h-index 10

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Low-power high-performance VLSI design
- Electrostatic Discharge in Electronics
Safety, Risk, Reliability and Quality

Papers in

Electrical and Electronic Engineering 37
- Semiconductor materials and devices 25
- Advancements in Semiconductor Devices and Circuit Design 18
- Radiation Effects in Electronics 4
- Integrated Circuits and Semiconductor Failure Analysis 2
- Electrostatic Discharge in Electronics 1
Biomedical Engineering 3
- Analog and Mixed-Signal Circuit Design 3

Co-authors: Emmanuel F. Crabbé (3 shared papers)Marc Ilegems (3 shared papers)Stewart E. Rauch (2 shared papers)Michel Dutoit (3 shared papers)Giuseppe La Rosa (1 shared paper)Fernando J. Guarin (1 shared paper)Bijan Davari (7 shared papers)Leonello Dori (2 shared papers)
Journals: IEEE Electron Device Letters (5 papers)Solid-State Electronics (3 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (2 papers)IBM Journal of Research and Development (1 paper)
Partner nations: United States Switzerland Greece

In The Last Decade

A. Acovic

31 papers receiving 332 citations

Peers

Countries citing papers authored by A. Acovic

Since Specialization

Citations

This map shows the geographic impact of A. Acovic's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Acovic with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Acovic more than expected).

Fields of papers citing papers by A. Acovic

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Acovic. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Acovic. The network helps show where A. Acovic may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Acovic, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Acovic Line = papers co-authored together A. Acovic links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 37 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies IEEE International Reliability Physics Symposium proceedings ·Giuseppe La Rosa, Fernando J. Guarin, Stewart E. Rauch, A. Acovic, J. Lukaitis, Emmanuel F. Crabbé	2002	80
2	Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current IEEE Transactions on Electron Devices ·A. Acovic, Michel Dutoit, Marc Ilegems	1990	34
3	CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications IBM Journal of Research and Development ·GHAVAM G. SHAHIDI, James N. Warnock, James H. Comfort, S.E. Fischer, P.A. McFarland, A. Acovic, Terry I. Chappell, B.A. Chappell	1995	34
4	High-performance devices for a 0.15- mu m CMOS technology IEEE Electron Device Letters ·GHAVAM G. SHAHIDI, James N. Warnock, S.E. Fischer, P.A. McFarland, A. Acovic, Seshadri Subbanna, Eti Ganin, Emmanuel F. Crabbé	1993	26
5	Effects of X-ray irradiation on GIDL in MOSFETs IEEE Electron Device Letters ·A. Acovic, Ching-Fang Hsu, L. C. Hsia, Artur P. Balasinski, T.P. Ma	1992	21
6	Optimized silicon-rich oxide (SRO) deposition process for 5 V only flash EEPROM applications IEEE Electron Device Letters ·Leonello Dori, A. Acovic, D. J. DiMaria, Chen-Hsuan Hsu	1993	19
7	A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric International Conference on Solid State Devices and Materials (SSDM) ·Chih-Wei Hsu, A. Acovic, Leonello Dori, Billy Wu, Tom Lii, D. Quinlan, D. J. DiMaria, Y. Taur	1992	18
8	Boron redistribution in arsenic-implanted silicon and short-channel effects in metal–oxide–semiconductor field effect transistors Applied Physics Letters ·D. K. Sadana, A. Acovic, Bijan Davari, Detlev Grützmacher, H.I. Hanafi +1 other	1992	15
9	Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxide IEEE Electron Device Letters ·Sidney Cohen, Shalom J. Wind, Tom Lii, Chen-Hsuan Hsu, D. Quinlan, Chun-Yen Chang, Douglas Andrew Buchanan, Paul D. Agnello	1993	14
10	Use of scanning capacitance microscopy for controlling wafer processing Microelectronics Reliability ·Oliver Jeandupeux, Vittorio Marsico, A. Acovic, P. Fazan, Harald Brune, Klaus Kern	2002	14
11	Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection IEEE International Reliability Physics Symposium proceedings ·Ernest Yue Wu, S.-H. Lo, W.W. Abadeer, A. Acovic, Douglas Andrew Buchanan, D. Brochu, Roger A. Dufresne +1 other	2002	10
12	A study of the increased effects of hot-carrier stress on NMOSFETs at low temperature IEEE Transactions on Electron Devices ·A. Acovic, Michel Dutoit, Marc Ilegems	1989	9
13	Monitoring hot-carrier degradation in SOI MOSFETs by hot-carrier luminescence techniques IEEE Transactions on Electron Devices ·L. Selmi, Maura Pavesi, H.‐S. Philip Wong, A. Acovic, E. Sangiorgi	1998	8
14	Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide Solid-State Electronics ·A. Acovic, Ching-Fang Hsu, L. C. Hsia, J. Aitken	1993	7
15	Fowler-Nordheim tunneling of carriers in MOS transistors: Two-dimensional simulation of gate current employing FIELDAY Solid-State Electronics ·S. Noor Mohammad, Giovanni Fiorenza, A. Acovic, Jeffrey B. Johnson, R.L. Carter	1995	7
16	A high-performance 0.08 μm CMOS Symposium on VLSI Technology ·L.T. Su, Seshadri Subbanna, Emmanuel F. Crabbé, Paul D. Agnello, Reinhard Schulz, Stewart E. Rauch, H. Ng, Thomas H. Newman	2002	7
17	Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Matthias Bucher, Aristeidis Nikolaou, Nikolaos Mavredakis, Nikolaos Makris, Mathieu Coustans, Jerome Lolivier, Predrag Habas, A. Acovic	2017	7
18	Chemical vapor deposition of rough-morphology silicon films over a broad temperature range Applied Physics Letters ·S. S. Dana, Mariano Anderle, Gary W. Rubloff, A. Acovic	1993	6
19	A novel borderless contact/interconnect technology using aluminum oxide etch stop for high performance SRAM and logic Technical digest - International Electron Devices Meeting/Technical digest ·Seshadri Subbanna, David L. Harame, B.A. Chappell, James H. Comfort, Bijan Davari, Robert L. Franch, D. A. Danner, A. Acovic	2002	3
20	Physical mechanism of interpoly capacitance reduction in high-voltage stress Solid-State Electronics ·Predrag Habas, A. Acovic, Biljana Marjanović, Maurice Lobet, Mohammed Benkais	2012	3

About A. Acovic

A. Acovic is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Nuclear Energy and Engineering, having authored 37 papers that have together received 357 indexed citations. Recurring topics across this work include Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers), Radiation Effects in Electronics (4 papers), Analog and Mixed-Signal Circuit Design (3 papers), Integrated Circuits and Semiconductor Failure Analysis (2 papers), Semiconductor materials and interfaces (2 papers), Copper Interconnects and Reliability (1 paper) and Electrostatic Discharge in Electronics (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (333 citations), Safety, Risk, Reliability and Quality (9 citations), Atomic and Molecular Physics, and Optics (27 citations), Hardware and Architecture (5 citations) and Biomedical Engineering (15 citations). A. Acovic has collaborated with scholars based in United States, Switzerland and Greece. Frequent co-authors include Emmanuel F. Crabbé, Marc Ilegems, Stewart E. Rauch, Michel Dutoit, Giuseppe La Rosa, Fernando J. Guarin, Bijan Davari, Leonello Dori, D. J. DiMaria and L. C. Hsia. Their work appears in journals such as IEEE Electron Device Letters, Solid-State Electronics, IEEE Transactions on Electron Devices, Applied Physics Letters and IBM Journal of Research and Development.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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