A. Acovic

474 citations

36 papers · 351 · h-index 10

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Advanced Memory and Neural Computing
- Radiation Effects in Electronics
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 36
- Advancements in Semiconductor Devices and Circuit Design 30
- Semiconductor materials and devices 29
- Integrated Circuits and Semiconductor Failure Analysis 18
- Low-power high-performance VLSI design 7
- Ferroelectric and Negative Capacitance Devices 3
- Electrostatic Discharge in Electronics 3
Biomedical Engineering 4
- Analog and Mixed-Signal Circuit Design 2

Co-authors: E.F. Crabbé (3 shared papers)M. Dutoit (3 shared papers)Stewart E. Rauch (2 shared papers)M. Ilegems (3 shared papers)Giuseppe La Rosa (1 shared paper)F Guarin (1 shared paper)B. Davari (7 shared papers)D. J. DiMaria (2 shared papers)
Journals: IEEE Electron Device Letters (5 papers)Solid-State Electronics (3 papers)IEEE Transactions on Electron Devices (3 papers)Applied Physics Letters (2 papers)Journal of Electronic Materials (1 paper)
Partner nations: United States Switzerland Greece

In The Last Decade

A. Acovic

30 papers receiving 329 citations

Peers

Countries citing papers authored by A. Acovic

Since Specialization

Citations

This map shows the geographic impact of A. Acovic's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Acovic with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Acovic more than expected).

Fields of papers citing papers by A. Acovic

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Acovic. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Acovic. The network helps show where A. Acovic may publish in the future.

Co-authors

The 25 scholars most cited alongside A. Acovic, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. Acovic Line = papers co-authored together A. Acovic links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 36 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	NBTI-channel hot carrier effects in PMOSFETs in advanced CMOS technologies Giuseppe La Rosa, F Guarin, Stewart E. Rauch, A. Acovic, J. Lukaitis, E.F. Crabbé	2002	80
2	Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current IEEE Transactions on Electron Devices ·A. Acovic, M. Dutoit, M. Ilegems	1990	34
3	CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications IBM Journal of Research and Development ·G. Shahidi, J.D. Warnock, J.H. Comfort, S.E. Fischer, P.A. McFarland, A. Acovic, T.I. Chappell, B.A. Chappell, T.H. Ning, C.J. Anderson, R.H. Dennard, J.Y.-C. Sun, M.R. Polcari, B. Davari	1995	33
4	High-performance devices for a 0.15- mu m CMOS technology IEEE Electron Device Letters ·G. Shahidi, J. Warnock, S.E. Fischer, P.A. McFarland, A. Acovic, S. Subbanna, E. Ganin, E.F. Crabbé, J.H. Comfort, J.Y.-C. Sun, T.H. Ning, B. Davari	1993	26
5	Effects of X-ray irradiation on GIDL in MOSFETs IEEE Electron Device Letters ·A. Acovic, Ching-Fang Hsu, L. C. Hsia, A. Balasiński, T.P. Ma	1992	21
6	Optimized silicon-rich oxide (SRO) deposition process for 5 V only flash EEPROM applications IEEE Electron Device Letters ·L. Dori, A. Acovic, D. J. DiMaria, Chen-Hsuan Hsu	1993	19
7	A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric Chih-Wei Hsu, A. Acovic, L. Dori, Billy Wu, T. Lii, D. Quinlan, D. J. DiMaria, Y. Taur, M.R. Wordeman, (unknown)	1992	18
8	Boron redistribution in arsenic-implanted silicon and short-channel effects in metal–oxide–semiconductor field effect transistors Applied Physics Letters ·D. K. Sadana, A. Acovic, B. Davari, Detlev Grützmacher, H.I. Hanafi, F. Cardone	1992	15
9	Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxide IEEE Electron Device Letters ·(unknown), Sidney Cohen, Shalom J. Wind, T. Lii, Chen-Hsuan Hsu, D. Quinlan, Chun-Yen Chang, D. A. Buchanan, P. Agnello, Y. J. Mii, C. M. Reeves, A. Acovic, V. P. Kesan	1993	14
10	Use of scanning capacitance microscopy for controlling wafer processing Microelectronics Reliability ·O. Jeandupeux, Vittorio Marsico, A. Acovic, P. Fazan, Harald Brune, Klaus Kern	2002	14
11	A study of the increased effects of hot-carrier stress on NMOSFETs at low temperature IEEE Transactions on Electron Devices ·A. Acovic, M. Dutoit, M. Ilegems	1989	9
12	Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection Ernest Y. Wu, S.-H. Lo, W.W. Abadeer, A. Acovic, D. A. Buchanan, Toshiyuki Furukawa, D. Brochu, Roger Dufresne	2002	9
13	Monitoring hot-carrier degradation in SOI MOSFETs by hot-carrier luminescence techniques IEEE Transactions on Electron Devices ·L. Selmi, M. Pavesi, H.‐S. Philip Wong, A. Acovic, E. Sangiorgi	1998	8
14	A high-performance 0.08 μm CMOS L.T. Su, S. Subbanna, E.F. Crabbé, P. Agnello, E. Nowak, R. Schulz, Stewart E. Rauch, H. Ng, Thomas H. Newman, Anupama Ray, M. Hargrove, A. Acovic, J. Snare, S. Crowder, B. Chen, J.Y.-C. Sun, B. Davari	2002	7
15	Fowler-Nordheim tunneling of carriers in MOS transistors: Two-dimensional simulation of gate current employing FIELDAY Solid-State Electronics ·S. Noor Mohammad, Giovanni Fiorenza, A. Acovic, Jeffrey B. Johnson, R.L. Carter	1995	7
16	Reduced hot-carrier reliability degradation of x-ray irradiated MOSFETs in a 0.25 μm CMOS technology with ultra-thin gate oxide Solid-State Electronics ·A. Acovic, Ching-Fang Hsu, L. C. Hsia, J. Aitken	1993	6
17	Chemical vapor deposition of rough-morphology silicon films over a broad temperature range Applied Physics Letters ·S. S. Dana, M. Anderle, Gary W. Rubloff, A. Acovic	1993	6
18	Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Matthias Bucher, Aristeidis Nikolaou, Nikolaos Mavredakis, Nikolaos Makris, Mathieu Coustans, J. Lolivier, P. Habaš, A. Acovic, René Meyer	2017	6
19	Physical mechanism of interpoly capacitance reduction in high-voltage stress Solid-State Electronics ·P. Habaš, A. Acovic, Biljana Marjanović, Maurice Lobet, Mohammed Benkais	2012	3
20	A novel borderless contact/interconnect technology using aluminum oxide etch stop for high performance SRAM and logic S. Subbanna, D.L. Harame, B.A. Chappell, J.H. Comfort, B. Davari, R. Franch, D. A. Danner, A. Acovic, S. Brodsky, J. Gilbreth, Dale N. Robertson, J. Malinowski, T. Lii, G. Shahidi	2002	3

About A. Acovic

A. Acovic is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 36 papers that have together received 351 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (30 papers), Semiconductor materials and devices (29 papers), Integrated Circuits and Semiconductor Failure Analysis (18 papers), Low-power high-performance VLSI design (7 papers), Ferroelectric and Negative Capacitance Devices (3 papers), Electrostatic Discharge in Electronics (3 papers), Copper Interconnects and Reliability (2 papers) and Analog and Mixed-Signal Circuit Design (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (344 citations), Atomic and Molecular Physics, and Optics (42 citations), Hardware and Architecture (7 citations), Materials Chemistry (39 citations) and Biomedical Engineering (28 citations). A. Acovic has collaborated with scholars based in United States, Switzerland and Greece. Frequent co-authors include E.F. Crabbé, M. Dutoit, Stewart E. Rauch, M. Ilegems, Giuseppe La Rosa, F Guarin, B. Davari, D. J. DiMaria, L. Dori and Ching-Fang Hsu. Their work appears in journals such as IEEE Electron Device Letters, Solid-State Electronics, IEEE Transactions on Electron Devices, Applied Physics Letters and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

A. Acovic

Impact in

Papers in i

In The Last Decade

A. Acovic

Peers

Countries citing papers authored by A. Acovic

Fields of papers citing papers by A. Acovic

All Works

About A. Acovic

Explore authors with similar magnitude of impact

Papers in