Jef Geypen

1.0k citations

40 papers · 822 · h-index 15

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Thin-Film Transistor Technologies
- Advanced Memory and Neural Computing
Structural Biology

Papers in

Electrical and Electronic Engineering 39
- Semiconductor materials and devices 30
- Advancements in Semiconductor Devices and Circuit Design 20
- Thin-Film Transistor Technologies 9
- Integrated Circuits and Semiconductor Failure Analysis 8
- 3D IC and TSV technologies 6
- Silicon and Solar Cell Technologies 6
Atomic and Molecular Physics, and Optics 8
- Semiconductor materials and interfaces 5

Co-authors: Hugo Bender (6 shared papers)Roger Loo (5 shared papers)Matty R. Caymax (2 shared papers)Marc Meuris (2 shared papers)Erik Rosseel (4 shared papers)Andrea Firrincieli (2 shared papers)Bert Brijs (2 shared papers)Eddy Roger Simoen (3 shared papers)
Journals: Japanese Journal of Applied Physics (4 papers)IEEE Transactions on Electron Devices (1 paper)Microelectronic Engineering (1 paper)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (1 paper)Journal of Applied Physics (1 paper)
Partner nations: Belgium United States United Kingdom

In The Last Decade

Jef Geypen

38 papers receiving 801 citations

Peers

Countries citing papers authored by Jef Geypen

Since Specialization

Citations

This map shows the geographic impact of Jef Geypen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jef Geypen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jef Geypen more than expected).

Fields of papers citing papers by Jef Geypen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jef Geypen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jef Geypen. The network helps show where Jef Geypen may publish in the future.

Co-authors

The 25 scholars most cited alongside Jef Geypen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jef Geypen Line = papers co-authored together Jef Geypen links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 40 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates Hans W. Mertens, R. Ritzenthaler, Andriy Yakovitch Hikavyy, M. S. Kim, Kurt L. Wostyn, Soon Aik Chew, A. De Keersgieter, Geert Mannaert	2016	171
2	Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates Hans W. Mertens, R. Ritzenthaler, Adrian Vaisman Chasin, Tom Schram, Eddy Kunnen, Andriy Yakovitch Hikavyy, Lars-Åke Ragnarsson, Hendrik F. W. Dekkers	2016	137
3	Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm A. Belmonte, H. Oh, Subhali Subhechha, Nouredine Rassoul, Hubert Hody, Hendrik F. W. Dekkers, Romain Delhougne, L. Ricotti	2021	52
4	Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS Anabela Veloso, Geert Hellings, M. J. Cho, Eddy Roger Simoen, Katia Devriendt, Vasile Paraschiv, Emma Vecchio, Janko Versluijs	2015	48
5	Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning Hans W. Mertens, Maryam Hosseini, Thomas M. Chiarella, D. L. Zhou, Shengyung Wang, Geert Mannaert, Emmanuel Dupuy, D. Radisic	2023	44
6	Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Subhali Subhechha, Nouredine Rassoul, A. Belmonte, Hubert Hody, Hendrik F. W. Dekkers, Michiel J. van Setten, A. Chasin, Shamin Houshmand Sharifi	2022	40
7	Study of ohmic contacts to n-type Ge: Snowplow and laser activation Applied Physics Letters ·Andrea Firrincieli, Koen M. Martens, R. Rooyackers, Benjamin Vincent, Erik Rosseel, Eddy Roger Simoen, Jef Geypen, Hugo Bender	2011	33
8	Selective Epitaxial Growth of Germanium on Si Wafers with Shallow Trench Isolation: An Approach for Ge Virtual Substrates ECS Transactions ·Gang Wang, Frederik E. Leys, Laurent Souriau, Roger Loo, Matty R. Caymax, D.P. Brunco, Jef Geypen, Hugo Bender	2008	28
9	Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures 2022 International Electron Devices Meeting (IEDM) ·Hans W. Mertens, R. Ritzenthaler, Yusuke Oniki, P. Puttarame Gowda, Geert Mannaert, Farid Sebaai, Andriy Yakovitch Hikavyy, Erik Rosseel	2022	27
10	SiGe SEG Growth for Buried Channels p-MOS Devices ECS Transactions ·Andriy Yakovitch Hikavyy, Roger Loo, Liesbeth Johanna Witters, Shinji Takeoka, Jef Geypen, Bert Brijs, Clément Merckling, Matty R. Caymax	2009	22
11	High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2 Gate Dielectric Japanese Journal of Applied Physics ·Jérôme Mitard, Brice De Jaeger, Geert Eneman, Andrew Dobbie, M. Myronov, Masaharu Kobayashi, Jef Geypen, Hugo Bender	2011	20
12	Process control & integration options of RMG technology for aggressively scaled devices Anabela Veloso, Yuichi Higuchi, Soon Aik Chew, Katia Devriendt, Lars-Åke Ragnarsson, Farid Sebaai, Tom Schram, Stephan Brus	2012	19
13	Forksheet FETs for Advanced CMOS Scaling: Forksheet-Nanosheet Co-Integration and Dual Work Function Metal Gates at 17nm N-P Space Symposium on VLSI Technology ·Hans W. Mertens, R. Ritzenthaler, Yusuke Oniki, B. Briggs, Boon Teik Chan, Andriy Yakovitch Hikavyy, Toby Hopf, Geert Mannaert	2021	17
14	Buried Power Rail Metal exploration towards the 1 nm Node Anshul Gupta, D. Radisic, Jan Willem Maes, Olalla Varela Pedreira, J-P. Soulie, N. Jourdan, Hans W. Mertens, S. Bandyopadhyay	2021	16
15	Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails IEEE Transactions on Electron Devices ·Anabela Veloso, Anne Jourdain, D. Radisic, Rongmei Chen, Goutham Arutchelvan, Barry J. O'Sullivan, Hiroaki Arimura, Michele Stucchi	2022	16
16	Si-passivated Ge nMOS gate stack with low Dit and dipole-induced superior PBTI reliability using 3D-compatible ALD caps and high-pressure anneal Hiroaki Arimura, Dáire J. Cott, Roger Loo, Wendy Vanherle, Qi Xie, Fu Tang, Xiaoqiang Jiang, Jacopo Franco	2016	14
17	Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology Japanese Journal of Applied Physics ·Anabela Veloso, Soon Aik Chew, Yuichi Higuchi, Lars-Åke Ragnarsson, Eddy Roger Simoen, Tom Schram, Thomas Witters, A. Van Ammel	2013	13
18	Impact of the chemical concentration on the solid-phase epitaxial regrowth of phosphorus implanted preamorphized germanium Journal of Applied Physics ·Eddy Roger Simoen, Antoine Brugère, Alessandra Satta, Andrea Firrincieli, Benny Van Daele, Bert Brijs, Olivier Richard, Jef Geypen	2009	11
19	Performance and reliability of high-mobility Si0.55Ge0.45 p-channel FinFETs based on epitaxial cladding of Si Fins Hans W. Mertens, R. Ritzenthaler, Andriy Yakovitch Hikavyy, Jacopo Franco, J. W. Lee, D.P. Brunco, Geert Eneman, Liesbeth Johanna Witters	2014	10
20	Monolithic-CFET with Direct Backside Contact to Source/Drain and Backside Dielectric Isolation Anne Vandooren, Karen Stiers, Chuanxiang Sheng, C. Cavalcante, Motaharesadat Hosseini, Dmitry Batuk, An Peng, Xinhang Zhou	2024	9

About Jef Geypen

Jef Geypen is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Mechanics of Materials, having authored 40 papers that have together received 822 indexed citations. Recurring topics across this work include Semiconductor materials and devices (30 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Thin-Film Transistor Technologies (9 papers), Integrated Circuits and Semiconductor Failure Analysis (8 papers), 3D IC and TSV technologies (6 papers), Silicon and Solar Cell Technologies (6 papers), Semiconductor materials and interfaces (5 papers) and Copper Interconnects and Reliability (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (786 citations), Structural Biology (7 citations), Biomedical Engineering (189 citations), Atomic and Molecular Physics, and Optics (109 citations) and Hardware and Architecture (15 citations). Jef Geypen has collaborated with scholars based in Belgium, United States and United Kingdom. Frequent co-authors include Hugo Bender, Roger Loo, Matty R. Caymax, Marc Meuris, Erik Rosseel, Andrea Firrincieli, Bert Brijs, Eddy Roger Simoen, Wilfried Vandervorst and Gang Wang. Their work appears in journals such as Japanese Journal of Applied Physics, IEEE Transactions on Electron Devices, Microelectronic Engineering, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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