A. E. Wickenden

4.9k citations

109 papers · 4.2k · 1 hit paper · h-index 33

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 90
- GaN-based semiconductor devices and materials 90
Electrical and Electronic Engineering 58
- Semiconductor materials and devices 40
- Silicon Carbide Semiconductor Technologies 11

Co-authors: D. D. Koleske (45 shared papers)S.C. Binari (17 shared papers)R.L. Henry (19 shared papers)R. L. Henry (21 shared papers)M. E. Twigg (9 shared papers)Jaime A. Freitas (15 shared papers)P. B. Klein (8 shared papers)H.B. Dietrich (4 shared papers)
Journals: Applied Physics Letters (15 papers)Journal of Electronic Materials (9 papers)Journal of Applied Physics (8 papers)Physical review. B, Condensed matter (8 papers)Journal of Crystal Growth (4 papers)
Partner nations: United States Germany Poland

In The Last Decade

A. E. Wickenden

109 papers receiving 4.1k citations

A. E. Wickenden's Hit Papers

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Trapping effects and microwave power performance in AlGaN/GaN HEMTs 2001 · 548 citations

Peers

Countries citing papers authored by A. E. Wickenden

Since Specialization

Citations

This map shows the geographic impact of A. E. Wickenden's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. E. Wickenden with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. E. Wickenden more than expected).

Fields of papers citing papers by A. E. Wickenden

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. E. Wickenden. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. E. Wickenden. The network helps show where A. E. Wickenden may publish in the future.

Co-authors

The 25 scholars most cited alongside A. E. Wickenden, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with A. E. Wickenden Line = papers co-authored together A. E. Wickenden links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Trapping effects and microwave power performance in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, Doewon Park, H.B. Dietrich, D. D. Koleske, A. E. Wickenden, R. L. Henry Hit paper breakdown →	2001	548
2	Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy Applied Physics Letters ·P. B. Klein, S.C. Binari, K. Ikossi, A. E. Wickenden, D. D. Koleske, R. L. Henry	2001	246
3	Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN Journal of Crystal Growth ·D. D. Koleske, A. E. Wickenden, R.L. Henry, M. E. Twigg	2002	241
4	GaN decomposition in H2 and N2 at MOVPE temperatures and pressures Journal of Crystal Growth ·D. D. Koleske, A. E. Wickenden, R.L. Henry, James C. Culbertson, M. E. Twigg	2001	200
5	Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors Applied Physics Letters ·P. B. Klein, Jaime A. Freitas, S.C. Binari, A. E. Wickenden	1999	152
6	The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation Applied Surface Science ·V. M. Bermudez, D. D. Koleske, A. E. Wickenden	1998	145
7	Biosensor Technologies for Augmented Brain–Computer Interfaces in the Next Decades Proceedings of the IEEE ·Lun‐De Liao, Chin‐Teng Lin, Kaleb McDowell, A. E. Wickenden, Klaus Gramann, Tzyy‐Ping Jung, Li‐Wei Ko, Jyh‐Yeong Chang	2012	144
8	Growth model for GaN with comparison to structural, optical, and electrical properties Journal of Applied Physics ·Daniel Koleske, A. E. Wickenden, R. L. Henry, William J. DeSisto, R. J. Gorman	1998	138
9	GaN FETs for microwave and high-temperature applications Solid-State Electronics ·Steven C. Binari, K. Doverspike, G. Kelner, H.B. Dietrich, A. E. Wickenden	1997	134
10	The growth and properties of Al and AlN films on GaN(0001)–(1×1) Journal of Applied Physics ·V. M. Bermudez, T. Jung, K. Doverspike, A. E. Wickenden	1996	128
11	Fabrication and characterization of GaN FETs Solid-State Electronics ·S.C. Binari, W. Kruppa, H.B. Dietrich, G. Kelner, A. E. Wickenden, Jaime A. Freitas	1997	122
12	Resistivity control in unintentionally doped GaN films grown by MOCVD Journal of Crystal Growth ·A. E. Wickenden, D. D. Koleske, R.L. Henry, M. E. Twigg, M. Fatemi	2003	97
13	Persistent photoconductivity in n-type GaN Applied Physics Letters ·G. Beadie, William S. Rabinovich, A. E. Wickenden, D. D. Koleske, S.C. Binari, Jaime A. Freitas	1997	80
14	Investigation of traps producing current collapsein AlGaN/GaN high electron mobility transistors Electronics Letters ·P. B. Klein, S.C. Binari, K. Ikossi‐Anastasiou, A. E. Wickenden, D. D. Koleske, R. L. Henry, D. S. Katzer	2001	77
15	Enhanced GaN decomposition in H2 near atmospheric pressures Applied Physics Letters ·Daniel Koleske, A. E. Wickenden, R.L. Henry, M. E. Twigg, James C. Culbertson, R. J. Gorman	1998	74
16	The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition Journal of Applied Physics ·A. E. Wickenden, D. K. Wickenden, Thomas J. Kistenmacher	1994	69
17	Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress Applied Physics Letters ·J. Mittereder, S.C. Binari, P. B. Klein, J.A. Roussos, D. S. Katzer, David F. Storm, D. D. Koleske, A. E. Wickenden, R. L. Henry	2003	68
18	Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors Journal of Applied Physics ·P. B. Klein, S.C. Binari, Jaime A. Freitas, A. E. Wickenden	2000	63
19	Electron Transport and Velocity Oscillations in a Carbon Nanotube IEEE Transactions on Nanotechnology ·Akin Akturk, Gary Pennington, Neil Goldsman, A. E. Wickenden	2007	60
20	Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition Physical review. B, Condensed matter ·E. R. Glaser, W. E. Carlos, G. C. B. Braga, Jaime A. Freitas, W. J. Moore, B. V. Shanabrook, R. L. Henry, A. E. Wickenden, Daniel Koleske, H. Obloh, P. Kozodoy, Steven P. DenBaars, Umesh K. Mishra	2002	59

About A. E. Wickenden

A. E. Wickenden is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry and Atomic and Molecular Physics, and Optics, having authored 109 papers that have together received 4.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (90 papers), Semiconductor materials and devices (40 papers), Ga2O3 and related materials (37 papers), ZnO doping and properties (32 papers), Silicon Carbide Semiconductor Technologies (11 papers), Semiconductor Quantum Structures and Devices (11 papers), Photocathodes and Microchannel Plates (10 papers) and Metal and Thin Film Mechanics (9 papers). The work is most often cited by research in Condensed Matter Physics (3.6k citations), Electronic, Optical and Magnetic Materials (1.8k citations), Electrical and Electronic Engineering (2.3k citations), Atomic and Molecular Physics, and Optics (948 citations) and Materials Chemistry (1.4k citations). A. E. Wickenden has collaborated with scholars based in United States, Germany and Poland. Frequent co-authors include D. D. Koleske, S.C. Binari, R.L. Henry, R. L. Henry, M. E. Twigg, Jaime A. Freitas, P. B. Klein, H.B. Dietrich, K. Ikossi and Daniel Koleske. Their work appears in journals such as Applied Physics Letters, Journal of Electronic Materials, Journal of Applied Physics, Physical review. B, Condensed matter and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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