S.C. Binari

4.5k citations

102 papers · 3.7k · 2 hit papers · h-index 29

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 88
- Semiconductor materials and devices 48
- Silicon Carbide Semiconductor Technologies 31
- Radio Frequency Integrated Circuit Design 21
- Advancements in Semiconductor Devices and Circuit Design 19
Condensed Matter Physics 64
- GaN-based semiconductor devices and materials 64

Co-authors: P. B. Klein (13 shared papers)A. E. Wickenden (17 shared papers)W. Kruppa (10 shared papers)G. Kelner (17 shared papers)H.B. Dietrich (11 shared papers)D. D. Koleske (10 shared papers)T.E. Kazior (2 shared papers)D. S. Katzer (34 shared papers)
Journals: Electronics Letters (19 papers)Applied Physics Letters (11 papers)IEEE Electron Device Letters (7 papers)Solid-State Electronics (6 papers)Journal of Applied Physics (5 papers)
Partner nations: United States China Spain

In The Last Decade

S.C. Binari

101 papers receiving 3.5k citations

S.C. Binari's Hit Papers

align trajectories log scale

Trapping effects in GaN and SiC microwave FETs 2002 · 361 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2002 Proceedings of the IEEE
2001 IEEE Transactions on Electron Devices

Peers

Countries citing papers authored by S.C. Binari

Since Specialization

Citations

This map shows the geographic impact of S.C. Binari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.C. Binari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.C. Binari more than expected).

Fields of papers citing papers by S.C. Binari

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.C. Binari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.C. Binari. The network helps show where S.C. Binari may publish in the future.

Co-authors

The 25 scholars most cited alongside S.C. Binari, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S.C. Binari Line = papers co-authored together S.C. Binari links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 102 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Trapping effects and microwave power performance in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, Doewon Park, H.B. Dietrich, D. D. Koleske, A. E. Wickenden, R. L. Henry Hit paper breakdown →	2001	536
2	Trapping effects in GaN and SiC microwave FETs Proceedings of the IEEE ·S.C. Binari, P. B. Klein, T.E. Kazior Hit paper breakdown →	2002	361
3	Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy Applied Physics Letters ·P. B. Klein, S.C. Binari, K. Ikossi, A. E. Wickenden, D. D. Koleske, R. L. Henry	2001	241
4	Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors Applied Physics Letters ·P. B. Klein, Jaime A. Freitas, S.C. Binari, A. E. Wickenden	1999	144
5	AlGaN/GaN HEMTs grown on SiC substrates Electronics Letters ·S.C. Binari, Joan M. Redwing, G. Kelner, W. Kruppa	1997	133
6	Microwave performance of GaN MESFETs Electronics Letters ·S.C. Binari, L.B. Rowland, W. Kruppa, G. Kelner, K. Doverspike, D. Kurt Gaskill	1994	121
7	Fabrication and characterization of GaN FETs Solid-State Electronics ·S.C. Binari, W. Kruppa, H.B. Dietrich, G. Kelner, A. E. Wickenden, Jaime A. Freitas	1997	118
8	Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation IEEE Electron Device Letters ·Andrew Edwards, J. Mittereder, S.C. Binari, D. S. Katzer, David F. Storm, J.A. Roussos	2005	110
9	H, He, and N implant isolation of n-type GaN Journal of Applied Physics ·S.C. Binari, H.B. Dietrich, G. Kelner, L.B. Rowland, K. Doverspike, D. K. Wickenden	1995	107
10	Electrical characterisation of Ti Schottky barrierson n -type GaN Electronics Letters ·S.C. Binari, H.B. Dietrich, G. Kelner, L.B. Rowland, K. Doverspike, D. Kurt Gaskill	1994	94
11	Experimental investigation of microchannel coolers for the high heat flux thermal management of GaN-on-SiC semiconductor devices International Journal of Heat and Mass Transfer ·J.P. Calame, Robert E. Myers, S.C. Binari, Franklin N. Wood, M. Garven	2007	81
12	Persistent photoconductivity in n-type GaN Applied Physics Letters ·G. Beadie, William S. Rabinovich, A. E. Wickenden, D. D. Koleske, S.C. Binari, Jaime A. Freitas	1997	78
13	Investigation of traps producing current collapsein AlGaN/GaN high electron mobility transistors Electronics Letters ·P. B. Klein, S.C. Binari, K. Ikossi‐Anastasiou, A. E. Wickenden, D. D. Koleske, R. L. Henry, D. S. Katzer	2001	75
14	Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress Applied Physics Letters ·J. Mittereder, S.C. Binari, P. B. Klein, J.A. Roussos, D. S. Katzer, David F. Storm, D. D. Koleske, A. E. Wickenden, R. L. Henry	2003	66
15	Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors Journal of Applied Physics ·P. B. Klein, S.C. Binari, Jaime A. Freitas, A. E. Wickenden	2000	62
16	A cat's eye multiple quantum-well modulating retro-reflector IEEE Photonics Technology Letters ·William S. Rabinovich, Rita Mahon, Peter G. Goetz, Eugène Waluschka, D. S. Katzer, S.C. Binari, G. C. Gilbreath	2003	56
17	Diamond metal-semiconductor-metal ultraviolet photodetectors Diamond and Related Materials ·S.C. Binari, Mike Marchywka, Deborah A. Koolbeck, H.B. Dietrich, D. Moses	1993	55
18	Low-frequency dispersion characteristics of GaNHFETs Electronics Letters ·W. Kruppa, S.C. Binari, K. Doverspike	1995	53
19	AlGaN/GaN heterostructure field-effect transistor model including thermal effects IEEE Transactions on Electron Devices ·John D. Albrecht, P. P. Ruden, S.C. Binari, Mario G. Ancona	2000	49
20	Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors Applied Physics Letters ·David A. Deen, David F. Storm, Robert B. Bass, David J. Meyer, D. S. Katzer, S.C. Binari, John W. Lacis, Theodosia Gougousi	2011	43

About S.C. Binari

S.C. Binari is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 102 papers that have together received 3.7k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (64 papers), Semiconductor materials and devices (48 papers), Silicon Carbide Semiconductor Technologies (31 papers), Semiconductor Quantum Structures and Devices (23 papers), Radio Frequency Integrated Circuit Design (21 papers), Advancements in Semiconductor Devices and Circuit Design (19 papers), Ga2O3 and related materials (13 papers) and Metal and Thin Film Mechanics (10 papers). The work is most often cited by research in Condensed Matter Physics (3.0k citations), Electronic, Optical and Magnetic Materials (1.2k citations), Electrical and Electronic Engineering (2.7k citations), Atomic and Molecular Physics, and Optics (958 citations) and Materials Chemistry (774 citations). S.C. Binari has collaborated with scholars based in United States, China and Spain. Frequent co-authors include P. B. Klein, A. E. Wickenden, W. Kruppa, G. Kelner, H.B. Dietrich, D. D. Koleske, T.E. Kazior, D. S. Katzer, J.A. Roussos and K. Ikossi. Their work appears in journals such as Electronics Letters, Applied Physics Letters, IEEE Electron Device Letters, Solid-State Electronics and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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S.C. Binari's Hit Papers

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