S.C. Binari

4.7k citations

106 papers · 3.9k · 2 hit papers · h-index 31

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advanced Power Amplifier Design
- Optical Wireless Communication Technologies
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Condensed Matter Physics 66
- GaN-based semiconductor devices and materials 66
Electrical and Electronic Engineering 41
- Silicon Carbide Semiconductor Technologies 13
- Semiconductor materials and devices 8
- Advancements in Semiconductor Devices and Circuit Design 8
- Radio Frequency Integrated Circuit Design 6
- Optical Wireless Communication Technologies 5

Co-authors: Paul B. Klein (13 shared papers)Alma E. Wickenden (17 shared papers)Walter Kruppa (10 shared papers)G. Kelner (18 shared papers)Harry B. Dietrich (11 shared papers)D. D. Koleske (10 shared papers)Thomas E. Kazior (2 shared papers)Douglas Scott Katzer (34 shared papers)
Journals: Electronics Letters (19 papers)Applied Physics Letters (11 papers)IEEE Electron Device Letters (7 papers)Journal of Applied Physics (6 papers)Solid-State Electronics (6 papers)
Partner nations: United States Spain

In The Last Decade

S.C. Binari

104 papers receiving 3.8k citations

S.C. Binari's Hit Papers

align trajectories log scale

Trapping effects in GaN and SiC microwave FETs 2002 · 378 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2002 Proceedings of the IEEE
2001 IEEE Transactions on Electron Devices

Peers

Countries citing papers authored by S.C. Binari

Since Specialization

Citations

This map shows the geographic impact of S.C. Binari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.C. Binari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.C. Binari more than expected).

Fields of papers citing papers by S.C. Binari

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.C. Binari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.C. Binari. The network helps show where S.C. Binari may publish in the future.

Co-authors

The 25 scholars most cited alongside S.C. Binari, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S.C. Binari Line = papers co-authored together S.C. Binari links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 106 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Trapping effects and microwave power performance in AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·S.C. Binari, Kiki Ikossi, J.A. Roussos, Walter Kruppa, Doewon Park, Harry B. Dietrich, D. D. Koleske, Alma E. Wickenden Hit paper breakdown →	2001	551
2	Trapping effects in GaN and SiC microwave FETs Proceedings of the IEEE ·S.C. Binari, Paul B. Klein, Thomas E. Kazior Hit paper breakdown →	2002	378
3	Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy Applied Physics Letters ·Paul B. Klein, S.C. Binari, Kiki Ikossi, Alma E. Wickenden, D. D. Koleske, R. L. Henry	2001	253
4	Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors Applied Physics Letters ·Paul B. Klein, Jaime A. Freitas, S.C. Binari, Alma E. Wickenden	1999	153
5	AlGaN/GaN HEMTs grown on SiC substrates Electronics Letters ·S.C. Binari, Joan Marie Redwing, G. Kelner, Walter Kruppa	1997	143
6	Microwave performance of GaN MESFETs Electronics Letters ·S.C. Binari, L.B. Rowland, Walter Kruppa, G. Kelner, Kathleen Doverspike, D. Kurt Gaskill	1994	130
7	H, He, and N implant isolation of n-type GaN Journal of Applied Physics ·S.C. Binari, Harry B. Dietrich, G. Kelner, L.B. Rowland, Kathleen Doverspike, D. K. Wickenden	1995	123
8	Fabrication and characterization of GaN FETs Solid-State Electronics ·S.C. Binari, Walter Kruppa, Harry B. Dietrich, G. Kelner, Alma E. Wickenden, Jaime A. Freitas	1997	121
9	Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation IEEE Electron Device Letters ·Andrew P. Edwards, Jeffrey A. Mittereder, S.C. Binari, Douglas Scott Katzer, David F. Storm, J.A. Roussos	2005	111
10	Electrical characterisation of Ti Schottky barrierson n -type GaN Electronics Letters ·S.C. Binari, Harry B. Dietrich, G. Kelner, L.B. Rowland, Kathleen Doverspike, D. Kurt Gaskill	1994	97
11	Experimental investigation of microchannel coolers for the high heat flux thermal management of GaN-on-SiC semiconductor devices International Journal of Heat and Mass Transfer ·Jeffrey P. Calame, Robert E. Myers, S.C. Binari, Franklin N. Wood, Morag Garven	2007	83
12	Persistent photoconductivity in n-type GaN Applied Physics Letters ·Guy Beadie, William S. Rabinovich, Alma E. Wickenden, D. D. Koleske, S.C. Binari, Jaime A. Freitas	1997	79
13	Investigation of traps producing current collapsein AlGaN/GaN high electron mobility transistors Electronics Letters ·Paul B. Klein, S.C. Binari, Kiki Ikossi-Anastasiou, Alma E. Wickenden, D. D. Koleske, R. L. Henry, Douglas Scott Katzer	2001	76
14	Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation Journal of Applied Physics ·Mario G. Ancona, S.C. Binari, David J. Meyer	2012	70
15	Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress Applied Physics Letters ·Jeffrey A. Mittereder, S.C. Binari, Paul B. Klein, J.A. Roussos, Douglas Scott Katzer, David F. Storm, D. D. Koleske, Alma E. Wickenden	2003	67
16	Diamond metal-semiconductor-metal ultraviolet photodetectors Diamond and Related Materials ·S.C. Binari, Mike Marchywka, Deborah A. Koolbeck, Harry B. Dietrich, Daniel J. Moses	1993	64
17	Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors Journal of Applied Physics ·Paul B. Klein, S.C. Binari, Jaime A. Freitas, Alma E. Wickenden	2000	62
18	A cat's eye multiple quantum-well modulating retro-reflector IEEE Photonics Technology Letters ·William S. Rabinovich, Rita Mahon, Peter G. Goetz, Eugène Waluschka, Douglas Scott Katzer, S.C. Binari, G. C. Gilbreath	2003	62
19	Low-frequency dispersion characteristics of GaNHFETs Electronics Letters ·Walter Kruppa, S.C. Binari, Kathleen Doverspike	1995	56
20	AlGaN/GaN heterostructure field-effect transistor model including thermal effects IEEE Transactions on Electron Devices ·John D. Albrecht, P. P. Ruden, S.C. Binari, Mario G. Ancona	2000	49

About S.C. Binari

S.C. Binari is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Astronomy and Astrophysics and Mechanical Engineering, having authored 106 papers that have together received 3.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (66 papers), Silicon Carbide Semiconductor Technologies (13 papers), Semiconductor materials and devices (8 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers), Radio Frequency Integrated Circuit Design (6 papers), Semiconductor materials and interfaces (6 papers), Optical Wireless Communication Technologies (5 papers) and Superconducting and THz Device Technology (4 papers). The work is most often cited by research in Condensed Matter Physics (3k citations), Electrical and Electronic Engineering (796 citations), Atomic and Molecular Physics, and Optics (325 citations), Instrumentation (9 citations) and Materials Chemistry (145 citations). S.C. Binari has collaborated with scholars based in United States and Spain. Frequent co-authors include Paul B. Klein, Alma E. Wickenden, Walter Kruppa, G. Kelner, Harry B. Dietrich, D. D. Koleske, Thomas E. Kazior, Douglas Scott Katzer, J.A. Roussos and Kiki Ikossi. Their work appears in journals such as Electronics Letters, Applied Physics Letters, IEEE Electron Device Letters, Journal of Applied Physics and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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S.C. Binari's Hit Papers

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About S.C. Binari

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