David A. Deen

1.1k citations

27 papers · 649 · h-index 17

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 22
- Semiconductor materials and devices 15
- Advancements in Semiconductor Devices and Circuit Design 7
Condensed Matter Physics 18
- GaN-based semiconductor devices and materials 17

Co-authors: David F. Storm (11 shared papers)David J. Meyer (11 shared papers)D. S. Katzer (11 shared papers)Yu Cao (5 shared papers)Tom Zimmermann (5 shared papers)Huili Grace Xing (5 shared papers)S.C. Binari (7 shared papers)Theodosia Gougousi (7 shared papers)
Journals: Applied Physics Letters (5 papers)Solid-State Electronics (3 papers)IEEE Electron Device Letters (2 papers)Journal of Applied Physics (2 papers)physica status solidi (a) (1 paper)
Partner nations: United States Japan

In The Last Decade

David A. Deen

26 papers receiving 629 citations

Peers

Countries citing papers authored by David A. Deen

Since Specialization

Citations

This map shows the geographic impact of David A. Deen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David A. Deen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David A. Deen more than expected).

Fields of papers citing papers by David A. Deen

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David A. Deen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David A. Deen. The network helps show where David A. Deen may publish in the future.

Co-authors

The 25 scholars most cited alongside David A. Deen, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with David A. Deen Line = papers co-authored together David A. Deen links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 27 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance IEEE Electron Device Letters ·Tom Zimmermann, David A. Deen, Yu Cao, John Simon, Patrick Fay, Debdeep Jena, Huili Grace Xing	2008	144
2	High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates IEEE Electron Device Letters ·David J. Meyer, David A. Deen, David F. Storm, Mario G. Ancona, D. S. Katzer, Robert B. Bass, J.A. Roussos, Brian P. Downey, Steven C. Binari, Theodosia Gougousi, Tanya Paskova, Edward A. Preble, K. R. Evans	2013	48
3	Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors Applied Physics Letters ·David A. Deen, David F. Storm, Robert B. Bass, David J. Meyer, D. S. Katzer, S.C. Binari, John W. Lacis, Theodosia Gougousi	2011	43
4	Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures Solid-State Electronics ·David A. Deen, David F. Storm, D. S. Katzer, David J. Meyer, S.C. Binari	2010	34
5	Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures Journal of Applied Physics ·Vas. P. Kunets, William T. Black, Yu. I. Mazur, D. Guzun, Gregory J. Salamo, N. Goel, T. D. Mishima, David A. Deen, Sheena Murphy, M. B. Santos	2005	34
6	Graphene-Based Quantum Capacitance Wireless Vapor Sensors IEEE Sensors Journal ·David A. Deen, Eric J. Olson, Mona A. Ebrish, Steven J. Koester	2014	34
7	AlN/GaN HEMTs with high‐κ ALD HfO₂ or Ta₂O₅ gate insulation Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·David A. Deen, David F. Storm, David J. Meyer, D. S. Katzer, Robert B. Bass, Steven C. Binari, Theodosia Gougousi	2011	31
8	Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates Journal of Crystal Growth ·David F. Storm, David A. Deen, D. S. Katzer, David J. Meyer, S.C. Binari, Theodosia Gougousi, T. Paskova, Edward A. Preble, K. R. Evans, David J. Smith	2013	28
9	Current focusing in InSb heterostructures Physica E Low-dimensional Systems and Nanostructures ·Aruna Dedigama, David A. Deen, Sheena Murphy, N. Goel, J. C. Keay, M. B. Santos, K. Suzuki, S. Miyashita, Y. Hirayama	2006	27
10	Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates Applied Physics Letters ·David A. Deen, David F. Storm, David J. Meyer, Robert B. Bass, Steven C. Binari, Theodosia Gougousi, K. R. Evans	2014	26
11	High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised Applied Physics Letters ·David A. Deen, James G. Champlain	2011	21
12	N‐polar n⁺ GaN cap development for low ohmic contact resistance to inverted HEMTs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·David J. Meyer, D. S. Katzer, Robert B. Bass, N. Y. Garces, Mario G. Ancona, David A. Deen, David F. Storm, S.C. Binari	2011	20
13	Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs Solid-State Electronics ·David J. Meyer, Robert B. Bass, D. S. Katzer, David A. Deen, Steven C. Binari, Kevin M. Daniels, (unknown)	2010	20
14	Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Solid-State Electronics ·David F. Storm, D. S. Katzer, David A. Deen, Robert B. Bass, David J. Meyer, J.A. Roussos, S.C. Binari, T. Paskova, Edward A. Preble, K. R. Evans	2010	19
15	AlN/GaN insulated gate HEMTs with HfO ₂ gate dielectric Electronics Letters ·David A. Deen, S.C. Binari, David F. Storm, D. S. Katzer, J.A. Roussos, Justin C. Hackley, Theodosia Gougousi	2009	18
16	HfO₂‐insulated gate N‐polar GaN HEMTs with high breakdown voltage physica status solidi (a) ·David J. Meyer, D. S. Katzer, David A. Deen, David F. Storm, S.C. Binari, Theodosia Gougousi	2011	17
17	Formation of ohmic contacts to ultra‐thin channel AlN/GaN HEMTs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Tom Zimmermann, David A. Deen, Yu Cao, Debdeep Jena, Huili Grace Xing	2008	16
18	2.3 nm barrier AlN/GaN HEMTs with insulated gates Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·David A. Deen, Tom Zimmermann, Yu Cao, Debdeep Jena, Huili Grace Xing	2008	15
19	Ultrathin MBE-Grown AlN/GaN HEMTs with record high current densities Yu Cao, Tom Zimmermann, David A. Deen, John Simon, Judy A. Bean, Ning Su, J. Zhang, Patrick Fay, Huili Grace Xing, D. Jena	2007	15
20	Multilayer HfO2/TiO2 gate dielectric engineering of graphene field effect transistors Applied Physics Letters ·David A. Deen, James G. Champlain, Steven J. Koester	2013	10

About David A. Deen

David A. Deen is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 27 papers that have together received 649 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (17 papers), Semiconductor materials and devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Ga2O3 and related materials (6 papers), ZnO doping and properties (4 papers), Metal and Thin Film Mechanics (4 papers), Graphene research and applications (3 papers) and Quantum and electron transport phenomena (3 papers). The work is most often cited by research in Condensed Matter Physics (505 citations), Electronic, Optical and Magnetic Materials (289 citations), Electrical and Electronic Engineering (455 citations), Atomic and Molecular Physics, and Optics (166 citations) and Materials Chemistry (182 citations). David A. Deen has collaborated with scholars based in United States and Japan. Frequent co-authors include David F. Storm, David J. Meyer, D. S. Katzer, Yu Cao, Tom Zimmermann, Huili Grace Xing, S.C. Binari, Theodosia Gougousi, Robert B. Bass and Patrick Fay. Their work appears in journals such as Applied Physics Letters, Solid-State Electronics, IEEE Electron Device Letters, Journal of Applied Physics and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

David A. Deen

Impact in

Papers in i

In The Last Decade

David A. Deen

Peers

Countries citing papers authored by David A. Deen

Fields of papers citing papers by David A. Deen

All Works

About David A. Deen

Explore authors with similar magnitude of impact

Papers in