Brian Romanczyk

1.7k citations

58 papers · 1.4k · h-index 21

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 51
- GaN-based semiconductor devices and materials 51
Electrical and Electronic Engineering 50
- Radio Frequency Integrated Circuit Design 30
- Semiconductor materials and devices 16
- Silicon Carbide Semiconductor Technologies 11
- Advancements in Semiconductor Devices and Circuit Design 8

Co-authors: S. Keller (49 shared papers)Umesh K. Mishra (49 shared papers)Matthew Guidry (41 shared papers)Xun Zheng (24 shared papers)Elaheh Ahmadi (23 shared papers)Steven Wienecke (18 shared papers)Haoran Li (11 shared papers)Nirupam Hatui (19 shared papers)
Journals: IEEE Electron Device Letters (11 papers)Semiconductor Science and Technology (6 papers)IEEE Transactions on Electron Devices (5 papers)Applied Physics Letters (3 papers)IEEE Transactions on Microwave Theory and Techniques (1 paper)
Partner nations: United States Italy Belgium

In The Last Decade

Brian Romanczyk

57 papers receiving 1.3k citations

Peers

Countries citing papers authored by Brian Romanczyk

Since Specialization

Citations

This map shows the geographic impact of Brian Romanczyk's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Brian Romanczyk with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Brian Romanczyk more than expected).

Fields of papers citing papers by Brian Romanczyk

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Brian Romanczyk. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Brian Romanczyk. The network helps show where Brian Romanczyk may publish in the future.

Co-authors

The 25 scholars most cited alongside Brian Romanczyk, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Brian Romanczyk Line = papers co-authored together Brian Romanczyk links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 58 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs IEEE Transactions on Electron Devices ·Brian Romanczyk, Steven Wienecke, Matthew Guidry, Haoran Li, Elaheh Ahmadi, Xun Zheng, S. Keller, Umesh K. Mishra	2017	183
2	N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz IEEE Electron Device Letters ·Steven Wienecke, Brian Romanczyk, Matthew Guidry, Haoran Li, Elaheh Ahmadi, Karine Hestroffer, Xun Zheng, S. Keller, Umesh K. Mishra	2017	98
3	W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs IEEE Electron Device Letters ·Brian Romanczyk, Xun Zheng, Matthew Guidry, Haoran Li, Nirupam Hatui, Christian Wurm, Athith Krishna, Elaheh Ahmadi, S. Keller, Umesh K. Mishra	2020	96
4	N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance IEEE Electron Device Letters ·Onur S. Koksaldi, J. Robert Haller, Haoran Li, Brian Romanczyk, Matthew Guidry, Steven Wienecke, S. Keller, Umesh K. Mishra	2018	88
5	High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz IEEE Electron Device Letters ·Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Rohit R. Karnaty, S. Keller, James F. Buckwalter, Umesh K. Mishra	2020	65
6	6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates IEEE Microwave and Wireless Components Letters ·Wenjian Liu, Brian Romanczyk, Matthew Guidry, Nirupam Hatui, Christian Wurm, Weiyi Li, Pawana Shrestha, Xun Zheng, S. Keller, Umesh K. Mishra	2021	44
7	N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage IEEE Electron Device Letters ·Xun Zheng, Matthew Guidry, Haoran Li, Elaheh Ahmadi, Karine Hestroffer, Brian Romanczyk, Steven Wienecke, S. Keller, Umesh K. Mishra	2015	44
8	Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs IEEE Transactions on Electron Devices ·Weiyi Li, Brian Romanczyk, Matthew Guidry, Emre Akso, Nirupam Hatui, Christian Wurm, Wenjian Liu, Pawana Shrestha, Henry Collins, Christopher Clymore, S. Keller, Umesh K. Mishra	2023	42
9	N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz IEEE Electron Device Letters ·Steven Wienecke, Brian Romanczyk, Matthew Guidry, Haoran Li, Xun Zheng, Elaheh Ahmadi, Karine Hestroffer, Ludovico Megalini, S. Keller, Umesh K. Mishra	2016	42
10	N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density IEEE Electron Device Letters ·Brian Romanczyk, Weiyi Li, Matthew Guidry, Nirupam Hatui, Athith Krishna, Christian Wurm, S. Keller, Umesh K. Mishra	2020	39
11	Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull Matthew Guidry, Steven Wienecke, Brian Romanczyk, Haoran Li, Xun Zheng, Elahe Ahmadi, Karine Hestroffer, S. Keller, Umesh K. Mishra	2016	30
12	Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs IEEE Transactions on Electron Devices ·Brian Romanczyk, Matthew Guidry, Xun Zheng, Haoran Li, Elaheh Ahmadi, S. Keller, Umesh K. Mishra	2020	28
13	Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm<sup>2</sup> peak current density to enhance TFET drive current Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·D. Pawlik, Brian Romanczyk, Paul M. Thomas, S.L. Rommel, M. Edirisooriya, R. Contreras‐Guerrero, Ravi Droopad, W.b. Loh, Man Hoi Wong, Kausik Majumdar, W.-E Wang, P. D. Kirsch, R. Jammy	2012	27
14	W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz Brian Romanczyk, Matthew Guidry, Steven Wienecke, H. Li, Elaheh Ahmadi, Xun Zheng, S. Keller, Umesh K. Mishra	2016	25
15	High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion Xun Zheng, Haoran Li, Elaheh Ahmadi, Karine Hestroffer, Matthew Guidry, Brian Romanczyk, Steven Wienecke, S. Keller, Umesh K. Mishra	2016	24
16	Observation of I_D-V_D Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures IEEE Electron Device Letters ·Davide Bisi, Steven Wienecke, Brian Romanczyk, Haoran Li, Elaheh Ahmadi, S. Keller, Matthew Guidry, Carlo De Santi, Matteo Meneghini, Gaudenzio Meneghesso, Umesh K. Mishra, Enrico Zanoni	2020	22
17	First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE Semiconductor Science and Technology ·Shubhra S. Pasayat, Elaheh Ahmadi, Brian Romanczyk, Onur S. Koksaldi, Anchal Agarwal, Matthew Guidry, Chirag Gupta, Christian Wurm, S. Keller, Umesh K. Mishra	2019	22
18	Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE Applied Physics Letters ·Brian Romanczyk, Matthew Guidry, Xun Zheng, Pawana Shrestha, Haoran Li, Elaheh Ahmadi, S. Keller, Umesh K. Mishra	2021	21
19	Record 34.2% efficient mm‐wave N‐polar AlGaN/GaN MISHEMT at 87 GHz Electronics Letters ·Brian Romanczyk, Matthew Guidry, Steven Wienecke, H. Li, Elaheh Ahmadi, Xun Zheng, S. Keller, Umesh K. Mishra	2016	21
20	Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$ IEEE Electron Device Letters ·Xun Zheng, Haoran Li, Matthew Guidry, Brian Romanczyk, Elaheh Ahmadi, Karine Hestroffer, Steven Wienecke, S. Keller, Umesh K. Mishra	2018	20

About Brian Romanczyk

Brian Romanczyk is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 58 papers that have together received 1.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (51 papers), Radio Frequency Integrated Circuit Design (30 papers), Semiconductor Quantum Structures and Devices (20 papers), Ga2O3 and related materials (16 papers), Semiconductor materials and devices (16 papers), Silicon Carbide Semiconductor Technologies (11 papers), Advancements in Semiconductor Devices and Circuit Design (8 papers) and ZnO doping and properties (6 papers). The work is most often cited by research in Condensed Matter Physics (1.2k citations), Electronic, Optical and Magnetic Materials (502 citations), Electrical and Electronic Engineering (927 citations), Atomic and Molecular Physics, and Optics (398 citations) and Materials Chemistry (290 citations). Brian Romanczyk has collaborated with scholars based in United States, Italy and Belgium. Frequent co-authors include S. Keller, Umesh K. Mishra, Matthew Guidry, Xun Zheng, Elaheh Ahmadi, Steven Wienecke, Haoran Li, Nirupam Hatui, Christian Wurm and Karine Hestroffer. Their work appears in journals such as IEEE Electron Device Letters, Semiconductor Science and Technology, IEEE Transactions on Electron Devices, Applied Physics Letters and IEEE Transactions on Microwave Theory and Techniques.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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