Huiling Shang

1.9k citations

47 papers · 1.6k · h-index 19

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 44
- Semiconductor materials and devices 42
- Advancements in Semiconductor Devices and Circuit Design 38
- Integrated Circuits and Semiconductor Failure Analysis 12
- Ferroelectric and Negative Capacitance Devices 8
- 3D IC and TSV technologies 5
- Silicon Carbide Semiconductor Technologies 4
- Advanced Memory and Neural Computing 4
Biomedical Engineering 6
- Nanowire Synthesis and Applications 6

Co-authors: Matthew Copel (7 shared papers)P. Kozlowski (4 shared papers)John A. Ott (8 shared papers)Meikei Ieong (11 shared papers)Kathryn Wilder Guarini (8 shared papers)H.‐S. Philip Wong (4 shared papers)Martin M. Frank (4 shared papers)Evgeni P. Gusev (3 shared papers)
Journals: IEEE Electron Device Letters (5 papers)Applied Physics Letters (4 papers)IEEE Transactions on Device and Materials Reliability (2 papers)Solid-State Electronics (2 papers)IEEE Transactions on Electron Devices (1 paper)
Partner nations: United States South Korea Taiwan

In The Last Decade

Huiling Shang

43 papers receiving 1.5k citations

Peers

Countries citing papers authored by Huiling Shang

Since Specialization

Citations

This map shows the geographic impact of Huiling Shang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Huiling Shang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Huiling Shang more than expected).

Fields of papers citing papers by Huiling Shang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Huiling Shang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Huiling Shang. The network helps show where Huiling Shang may publish in the future.

Co-authors

The 25 scholars most cited alongside Huiling Shang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Huiling Shang Line = papers co-authored together Huiling Shang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Germanium channel MOSFETs: Opportunities and challenges IBM Journal of Research and Development ·Huiling Shang, Martin M. Frank, Evgeni P. Gusev, J. O. Chu, Stephen W. Bedell, Kathryn Wilder Guarini, Meikei Ieong	2006	152
2	Electrical characterization of germanium p-channel MOSFETs IEEE Electron Device Letters ·Huiling Shang, H. Okorn-Schimdt, John A. Ott, P. Kozlowski, Steven E. Steen, Erin C. Jones, H.‐S. Philip Wong, W. Hanesch	2003	147
3	Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate IEEE Electron Device Letters ·Huiling Shang, K.-L. Lee, P. Kozlowski, C. D’Emic, Inna V. Babich, E. Sikorski, Meikei Ieong, H.‐S. Philip Wong	2004	143
4	Ultrathin $hbox Al_2hbox O_3$ and $hboxHfO_2$ Gate Dielectrics on Surface-Nitrided Ge IEEE Transactions on Electron Devices ·Jindi Chen, N.A. Bojarczuk, Huiling Shang, Matthew Copel, James B. Hannon, J. Karasiński, Edward Preisler, Sanjay Kumar Banerjee	2004	114
5	Hafnium oxide gate dielectrics on sulfur-passivated germanium Applied Physics Letters ·Martin M. Frank, Steven J. Koester, Matthew Copel, John A. Ott, Vamsi K. Paruchuri, Huiling Shang, Rainer Loesing	2006	113
6	High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization C-H. Lin, Brian J. Greene, J. Cai, A. Bryant, Carl J. Radens, Vijay Narayanan, B.P. Linder, H. Ho	2014	108
7	High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric Huiling Shang, H. Schmidt, Kevin K. F. Chan, Matthew Copel, John A. Ott, P. Kozlowski, Steven E. Steen, Steven A. Cordes	2003	99
8	5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm 2 SRAM cells for Mobile SoC and High Performance Computing Applications Geoffrey C-F Yeap, S.S. Lin, Y. M. Chen, Huiling Shang, P. W. Wang, H.C. Lin, Yiyun Peng, J.Y. Sheu	2019	84
9	Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100) Applied Physics Letters ·Evgeni P. Gusev, Huiling Shang, Matthew Copel, Michael A. Gribelyuk, Christopher P. D'Emic, P. Kozlowski, Tina Zabel	2004	84
10	A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI Kwangyou Seo, Bala Haran, Divya Gupta, Dechao Guo, Theodorus E. Standaert, Ren Xie, Huiling Shang, Emre Alptekin	2014	82
11	Epitaxial silicon and germanium on buried insulator heterostructures and devices Applied Physics Letters ·N. A. Bojarczuk, Matthew Copel, Supratik Guha, Vijay Narayanan, Edward Preisler, Frances M. Ross, Huiling Shang	2003	70
12	Investigation of FinFET Devices for 32nm Technologies and Beyond Huiling Shang, L. Chang, X. Wang, Michael J. Rooks, Y. Zhang, B.N. To, Katherina Babich, George G. Totir	2006	46
13	Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology IEEE Transactions on Device and Materials Reliability ·Xiaobin Yuan, Jae-Eun Park, Jing Wang, Enhai Zhao, D. Ahlgren, Terence B. Hook, Jun Tang Yuan, V. Chan	2008	29
14	Selectively formed high mobility strained Ge PMOSFETs for high performance CMOS Huiling Shang, J. O. Chu, Stephen W. Bedell, Evgeni P. Gusev, Paul C. Jamison, Ying Zhang, John A. Ott, Matthew Copel	2005	26
15	Interface studies of tungsten gate metal–oxide–silicon capacitors Applied Physics Letters ·Huiling Shang, Marvin H. White, Kathryn Wilder Guarini, Paul Michael Solomon, E. Cartier, Fenton R. McFeely, John J. Yurkas, Wen‐Chin Lee	2001	25
16	A Reliability Enhanced 5nm CMOS Technology Featuring 5th Generation FinFET with Fully-Developed EUV and High Mobility Channel for Mobile SoC and High Performance Computing Application Juan LIU, Subhadeep Mukhopadhyay, Amit Kundu, S.H. Chen, H.C. Wang, Dongsheng Huang, J.H. Lee, Meiyuan Wang	2020	24
17	High performance bulk planar 20nm CMOS technology for low power mobile applications Huiling Shang, Sameer H. Jain, E. Josse, Emre Alptekin, Myung Hee Nam, Sunwoo Kim, Keun Hwi Cho, I. Kim	2012	24
18	2nm Platform Technology Featuring Energy-Efficient Nanosheet Transistors and Interconnects Co-Optimized with 3DIC for AI, HPC and Mobile SoC Applications Geoffrey C-F Yeap, Shiwei Lin, Huiling Shang, H.C. Lin, Yu Chieh Peng, Mu‐Chun Wang, P. W. Wang, Ching‐Po Lin	2024	20
19	A low voltage SANOS nonvolatile semiconductor memory (NVSM) device Solid-State Electronics ·Yijie Zhao, Xiaonan Wang, Huiling Shang, Marvin H. White	2006	19
20	An ultra-thin midgap gate FDSOI MOSFET Solid-State Electronics ·Huiling Shang, Marvin H. White	2000	19

About Huiling Shang

Huiling Shang is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Hardware and Architecture and Radiology, Nuclear Medicine and Imaging, having authored 47 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (42 papers), Advancements in Semiconductor Devices and Circuit Design (38 papers), Integrated Circuits and Semiconductor Failure Analysis (12 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Nanowire Synthesis and Applications (6 papers), 3D IC and TSV technologies (5 papers), Silicon Carbide Semiconductor Technologies (4 papers) and Advanced Memory and Neural Computing (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.5k citations), Atomic and Molecular Physics, and Optics (366 citations), Materials Chemistry (327 citations), Biomedical Engineering (234 citations) and Hardware and Architecture (31 citations). Huiling Shang has collaborated with scholars based in United States, South Korea and Taiwan. Frequent co-authors include Matthew Copel, P. Kozlowski, John A. Ott, Meikei Ieong, Kathryn Wilder Guarini, H.‐S. Philip Wong, Martin M. Frank, Evgeni P. Gusev, Erin C. Jones and Steven E. Steen. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Transactions on Device and Materials Reliability, Solid-State Electronics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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