G. E. Bulman

2.1k citations

59 papers · 1.8k · h-index 21

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Instrumentation top 5%

Papers in

Electrical and Electronic Engineering 38
- Semiconductor materials and devices 16
- Advanced Semiconductor Detectors and Materials 11
- Plasma Diagnostics and Applications 7
Condensed Matter Physics 28
- GaN-based semiconductor devices and materials 28

Co-authors: I. Adesida (7 shared papers)C. Youtsey (7 shared papers)G. E. Stillman (5 shared papers)V. M. Robbins (4 shared papers)L. W. Cook (6 shared papers)Lucia Romano (3 shared papers)Hoyoul Kong (13 shared papers)J. A. Edmond (12 shared papers)
Journals: Applied Physics Letters (14 papers)Journal of Electronic Materials (6 papers)IEEE Transactions on Electron Devices (4 papers)Electronics Letters (2 papers)IEEE Electron Device Letters (2 papers)
Partner nations: United States China United Kingdom

In The Last Decade

G. E. Bulman

58 papers receiving 1.7k citations

Peers

Countries citing papers authored by G. E. Bulman

Since Specialization

Citations

This map shows the geographic impact of G. E. Bulman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. E. Bulman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. E. Bulman more than expected).

Fields of papers citing papers by G. E. Bulman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. E. Bulman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. E. Bulman. The network helps show where G. E. Bulman may publish in the future.

Co-authors

The 25 scholars most cited alongside G. E. Bulman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. E. Bulman Line = papers co-authored together G. E. Bulman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 59 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Highly anisotropic photoenhanced wet etching of n-type GaN Applied Physics Letters ·C. Youtsey, I. Adesida, G. E. Bulman	1997	176
2	Superlattice-based thin-film thermoelectric modules with high cooling fluxes Nature Communications ·G. E. Bulman, Phil Barletta, Jay Lewis, Nicholas Baldasaro, Michael Manno, Avram Bar‐Cohen, Bao Yang	2016	169
3	Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements Applied Physics Letters ·L. W. Cook, G. E. Bulman, G. E. Stillman	1982	132
4	Smooth n-type GaN surfaces by photoenhanced wet etching Applied Physics Letters ·C. Youtsey, I. Adesida, Lucia Romano, G. E. Bulman	1998	126
5	The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements IEEE Transactions on Electron Devices ·G. E. Bulman, V. M. Robbins, G. E. Stillman	1985	116
6	Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC Electronics Letters ·G. E. Bulman, K. Doverspike, S.T. Sheppard, T. W. Weeks, Hoyoul Kong, H. Dieringer, J. A. Edmond, J.D. Brown, J.T. Swindell, J. F. Schetzina	1997	115
7	Experimental determination of impact ionization coefficients in IEEE Electron Device Letters ·G. E. Bulman, V. M. Robbins, Kevin F. Brennan, K. Hess, G. E. Stillman	1983	114
8	Dopant-selective photoenhanced wet etching of GaN Journal of Electronic Materials ·C. Youtsey, G. E. Bulman, I. Adesida	1998	74
9	Strain determination in heteroepitaxial GaN Applied Physics Letters ·B. J. Skromme, He Zhao, D. Wang, Hoyoul Kong, M. Leonard, G. E. Bulman, R. J. Molnar	1997	61
10	Large external ΔT and cooling power densities in thin-film Bi2Te3-superlattice thermoelectric cooling devices Applied Physics Letters ·G. E. Bulman, E. Siivola, B. G. Shen, R. Venkatasubramanian	2006	56
11	Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates Applied Physics Letters ·(unknown), A. J. Fischer, J. J. Song, G. E. Bulman, Hoyoul Kong, M. Leonard, W. G. Perry, M. D. Bremser, R. F. Davis	1996	50
12	Gain characteristics of InGaN/GaN quantum well diode lasers Applied Physics Letters ·Y.-K. Song, Martin Kuball, A. V. Nurmikko, G. E. Bulman, K. Doverspike, S.T. Sheppard, T. W. Weeks, M. Leonard, Hoyoul Kong, H. Dieringer, J. A. Edmond	1998	49
13	Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy Applied Physics Letters ·A. Vertikov, A. V. Nurmikko, K. Doverspike, G. E. Bulman, J. A. Edmond	1998	49
14	Broad-area photoelectrochemical etching of GaN Electronics Letters ·C. Youtsey, I. Adesida, G. E. Bulman	1997	46
15	The determination of impact ionization coefficients in IEEE Transactions on Electron Devices ·G. E. Bulman, V. M. Robbins, G. E. Stillman	1985	45
16	Controlled improvement in specific contact resistivity for thermoelectric materials by ion implantation Applied Physics Letters ·Patrick J. Taylor, Jay R. Maddux, Greg Meissner, R. Venkatasubramanian, G. E. Bulman, Jonathan Pierce, Rahul Gupta, Jim Bierschenk, Chris Caylor, Jonathan D’Angelo, Zhifeng Ren	2013	39
17	Dry and Wet Etching for Group III – Nitrides MRS Internet Journal of Nitride Semiconductor Research ·I. Adesida, C. Youtsey, A. T. Ping, Farid Khan, Lucia Romano, G. E. Bulman	1999	30
18	Long-wavelength (1.3- to 1.6-µm) detectors for fiber-optical communications IEEE Transactions on Electron Devices ·G. E. Stillman, L. W. Cook, G. E. Bulman, N. Tabatabaie, R. Chin, P.D. Dapkus	1982	23
19	InGaAsP photodiodes IEEE Transactions on Electron Devices ·G. E. Stillman, L. W. Cook, N. Tabatabaie, G. E. Bulman, V. M. Robbins	1983	21
20	Photocurrent multiplication in ion implanted lateral In0.2Ga0.8As/GaAs strained-layer superlattice photodetectors Applied Physics Letters ·G. E. Bulman, David R. Myers, T. E. Zipperian, L. R. Dawson, J. J. Wiczer, R. M. Biefeld	1985	20

About G. E. Bulman

G. E. Bulman is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Materials Chemistry and Mechanics of Materials, having authored 59 papers that have together received 1.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (28 papers), Semiconductor Quantum Structures and Devices (20 papers), Semiconductor materials and devices (16 papers), Metal and Thin Film Mechanics (12 papers), Advanced Semiconductor Detectors and Materials (11 papers), Ga2O3 and related materials (10 papers), Advanced Thermoelectric Materials and Devices (8 papers) and Plasma Diagnostics and Applications (7 papers). The work is most often cited by research in Condensed Matter Physics (857 citations), Instrumentation (118 citations), Atomic and Molecular Physics, and Optics (720 citations), Electronic, Optical and Magnetic Materials (390 citations) and Electrical and Electronic Engineering (1.1k citations). G. E. Bulman has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include I. Adesida, C. Youtsey, G. E. Stillman, V. M. Robbins, L. W. Cook, Lucia Romano, Hoyoul Kong, J. A. Edmond, K. Doverspike and R. Venkatasubramanian. Their work appears in journals such as Applied Physics Letters, Journal of Electronic Materials, IEEE Transactions on Electron Devices, Electronics Letters and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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