T. W. Weeks

851 citations

23 papers · 725 · 1 hit paper · h-index 12

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 20
- GaN-based semiconductor devices and materials 20
Electronic, Optical and Magnetic Materials 11
- Ga2O3 and related materials 10

Co-authors: R. F. Davis (14 shared papers)M. D. Bremser (14 shared papers)W. G. Perry (6 shared papers)E.P. Carlson (3 shared papers)K. S. Ailey (5 shared papers)K. Doverspike (6 shared papers)G. E. Bulman (4 shared papers)J. A. Edmond (4 shared papers)
Journals: Applied Physics Letters (4 papers)Materials Science and Engineering B (1 paper)Applied Surface Science (1 paper)Thin Solid Films (1 paper)IBM Journal of Research and Development (1 paper)
Partner nations: United States China United Kingdom

In The Last Decade

T. W. Weeks

22 papers receiving 692 citations

T. W. Weeks's Hit Papers

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GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers 1995 · 216 citations

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Countries citing papers authored by T. W. Weeks

Since Specialization

Citations

This map shows the geographic impact of T. W. Weeks's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. W. Weeks with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. W. Weeks more than expected).

Fields of papers citing papers by T. W. Weeks

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. W. Weeks. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. W. Weeks. The network helps show where T. W. Weeks may publish in the future.

Co-authors

The 25 scholars most cited alongside T. W. Weeks, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with T. W. Weeks Line = papers co-authored together T. W. Weeks links everyone, so they are left out of the graph.

All Works

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#	Work
1	GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high-temperature monocrystalline AlN buffer layers Applied Physics Letters ·T. W. Weeks, M. D. Bremser, K. S. Ailey, E.P. Carlson, W. G. Perry, R. F. Davis Hit paper breakdown →	1995	216
2	Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC Electronics Letters ·G. E. Bulman, K. Doverspike, S.T. Sheppard, T. W. Weeks, Hoyoul Kong, H. Dieringer, J. A. Edmond, J.D. Brown, J.T. Swindell, J. F. Schetzina	1997	115
3	UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC Applied Surface Science ·Mark C. Benjamin, M. D. Bremser, T. W. Weeks, Sean W. King, R. F. Davis, R. J. Nemanich	1996	60
4	Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry Applied Physics Letters ·N. V. Edwards, M. D. Bremser, T. W. Weeks, R. S. Kern, R. F. Davis, D. E. Aspnes	1996	54
5	Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy Journal of materials research/Pratt's guide to venture capital sources ·T. W. Weeks, M. D. Bremser, K. S. Ailey, E.P. Carlson, W. G. Perry, E. L. Piner, N. A. El-Masry, R. F. Davis	1996	51
6	Gain characteristics of InGaN/GaN quantum well diode lasers Applied Physics Letters ·Y.-K. Song, Martin Kuball, A. V. Nurmikko, G. E. Bulman, K. Doverspike, S.T. Sheppard, T. W. Weeks, M. Leonard, Hoyoul Kong, H. Dieringer, J. A. Edmond	1998	49
7	Variation of GaN valence bands with biaxial stress and quantification of residual stress Applied Physics Letters ·N. V. Edwards, Seunghyun Yoo, M. D. Bremser, T. W. Weeks, O. H. Nam, R. F. Davis, H. Liu, R. A. Stall, M. N. Horton, Nathan Perkins, T. F. Kuech, D. E. Aspnes	1997	44
8	Overview of gate linewidth control in the manufacture of CMOS logic chips IBM Journal of Research and Development ·D. G. Chesebro, J. Adkisson, Lawrence Clark, S. Eslinger, M. A. Faucher, Steven J. Holmes, R. P. Mallette, E. Nowak, E. W. Sengle, Steven H. Voldman, T. W. Weeks	1995	25
9	Large-Area, Device Quality GaN on Si Using a Novel Transition Layer Scheme MRS Proceedings ·Pradeep Rajagopal, Thomas Gehrke, J. C. Roberts, J.D. Brown, T. W. Weeks, E. L. Piner, K. J. Linthicum	2002	18
10	Issues and Examples Regarding Growth of AlN, GaN and Al_xGa_1−xN Thin Films via OMVPE and Gas Source MBE MRS Proceedings ·R. F. Davis, T. W. Weeks, M. D. Bremser, Satoru Tanaka, R. S. Kern, Zlatko Sitar, K. S. Ailey, W. G. Perry, C. Wang	1995	18
11	Ohmic Contact Formation to Doped GaN MRS Proceedings ·Laura L. Smith, M. D. Bremser, E.P. Carlson, T. W. Weeks, Yi Huang, M. J. Kim, R. W. Carpenter, R. F. Davis	1995	18
12	Status of Nitride Based Light Emitting and Laser Diodes on SiC MRS Proceedings ·K. Doverspike, G. E. Bulman, S.T. Sheppard, Hoyoul Kong, M. Leonard, H. Dieringer, T. W. Weeks, J. A. Edmond, J.D. Brown, J. T. Swindle, J. F. Schetzina, (unknown), Martin Kuball, A. V. Nurmikko	1997	15
13	Detection of Magnetic Resonance on Shallow Donor - Shallow Acceptor and Deep (2.2 eV) Recombination from GaN Films Grown on 6H-SiC MRS Proceedings ·E. R. Glaser, T. A. Kennedy, Steven W. Brown, J. A. Freitas, W. G. Perry, M. D. Bremser, T. W. Weeks, R. F. Davis	1995	8
14	Analysis of Strain in GaN on Al₂O₃ and 6H-SiC: Near-Bandedge Phenomena MRS Proceedings ·N. V. Edwards, M. D. Bremser, T. W. Weeks, R. S. Kern, H. Liu, R. A. Stall, A. E. Wickenden, K. Doverspike, D. Kurt Gaskill, J. A. Freitas, U. Rossów, R. F. Davis, D. E. Aspnes	1995	7
15	1.8 million transistor CMOS ASIC fabricated in a SiGe BiCMOS technology Rob Johnson, M. Zierak, K.B. Outama, T.C. Bahn, Alvin Joseph, C.N. Cordero, J. Malinowski, K.A. Bard, T. W. Weeks, R.A. Milliken, T.J. Medve, G. May, Woon Shing Chong, K. Walter, S.L. Tempest, B.B. Chau, Myra Boenke, M. Nelson, D.L. Harame	2002	6
16	Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films Thin Solid Films ·N. V. Edwards, Seunghyun Yoo, M. D. Bremser, M. N. Horton, Nathan Perkins, T. W. Weeks, H Liu, R. A. Stall, T. F. Kuech, R. F. Davis, D. E. Aspnes	1998	6
17	Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films Materials Science and Engineering B ·N. V. Edwards, Seunghyun Yoo, M. D. Bremser, T.S. Zheleva, M. N. Horton, Nathan Perkins, T. W. Weeks, H Liu, R. A. Stall, T. F. Kuech, R. F. Davis, D. E. Aspnes	1997	5
18	Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization Solid-State Electronics ·R. F. Davis, T. W. Weeks, M. D. Bremser, Satoru Tanaka, R. S. Kern, Zlatko Sitar, K. S. Ailey, W. G. Perry, C. Wang	1997	4
19	The First Nitride Laser Diode on Silicon Carbide MRS Proceedings ·J.D. Brown, J.T. Swindell, Mark A. Johnson, Zhonghai Yu, J. F. Schetzina, G. E. Bulman, K. Doverspike, S.T. Sheppard, T. W. Weeks, M. Leonard, Hoyoul Kong, H. Dieringer, C. Carter, J. A. Edmond	1997	2
20	Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters MRS Proceedings ·N. V. Edwards, Seunghyun Yoo, M. D. Bremser, M. N. Horton, Nathan Perkins, T. W. Weeks, H. Liu, R. A. Stall, T. F. Kuech, R. F. Davis, D. E. Aspnes	1996	2

About T. W. Weeks

T. W. Weeks is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Mechanics of Materials and Atomic and Molecular Physics, and Optics, having authored 23 papers that have together received 725 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (20 papers), Ga2O3 and related materials (10 papers), Metal and Thin Film Mechanics (8 papers), Semiconductor Quantum Structures and Devices (8 papers), ZnO doping and properties (6 papers), Silicon Carbide Semiconductor Technologies (3 papers), Semiconductor materials and devices (3 papers) and Advancements in Semiconductor Devices and Circuit Design (2 papers). The work is most often cited by research in Condensed Matter Physics (642 citations), Electronic, Optical and Magnetic Materials (238 citations), Mechanics of Materials (202 citations), Atomic and Molecular Physics, and Optics (234 citations) and Electrical and Electronic Engineering (343 citations). T. W. Weeks has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include R. F. Davis, M. D. Bremser, W. G. Perry, E.P. Carlson, K. S. Ailey, K. Doverspike, G. E. Bulman, J. A. Edmond, S.T. Sheppard and Hoyoul Kong. Their work appears in journals such as Applied Physics Letters, Materials Science and Engineering B, Applied Surface Science, Thin Solid Films and IBM Journal of Research and Development.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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T. W. Weeks

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