U. Lindefelt

4.2k citations

88 papers · 3.5k · h-index 30

Impact in

Electrical and Electronic Engineering top 1%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Electromagnetic Compatibility and Noise Suppression
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design
Ceramics and Composites top 2%
- Advanced ceramic materials synthesis

Papers in

Electrical and Electronic Engineering 76
- Silicon Carbide Semiconductor Technologies 53
- Semiconductor materials and devices 39
- Silicon and Solar Cell Technologies 14
- Advancements in Semiconductor Devices and Circuit Design 10
Atomic and Molecular Physics, and Optics 39
- Semiconductor materials and interfaces 33
- Semiconductor Quantum Structures and Devices 11
- Surface and Thin Film Phenomena 10

Co-authors: Clas Persson (10 shared papers)Alex Zunger (10 shared papers)Hisaomi Iwata (17 shared papers)Sven Öberg (14 shared papers)Andrey O. Konstantinov (5 shared papers)P. R. Briddon (15 shared papers)Q. Wahab (4 shared papers)N. Nordell (4 shared papers)
Journals: Physical review. B, Condensed matter (22 papers)Journal of Applied Physics (13 papers)Applied Physics Letters (5 papers)Semiconductor Science and Technology (2 papers)Solid State Communications (2 papers)
Partner nations: Sweden Switzerland United States

In The Last Decade

U. Lindefelt

88 papers receiving 3.4k citations

Peers

Countries citing papers authored by U. Lindefelt

Since Specialization

Citations

This map shows the geographic impact of U. Lindefelt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Lindefelt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Lindefelt more than expected).

Fields of papers citing papers by U. Lindefelt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Lindefelt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Lindefelt. The network helps show where U. Lindefelt may publish in the future.

Co-authors

The 25 scholars most cited alongside U. Lindefelt, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with U. Lindefelt Line = papers co-authored together U. Lindefelt links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 88 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes Materials science forum ·Peder Bergman, H. Lendenmann, Per Åke Nilsson, U. Lindefelt, P. Skytt	2001	343
2	Ionization rates and critical fields in 4H silicon carbide Applied Physics Letters ·Andrey O. Konstantinov, Q. Wahab, N. Nordell, U. Lindefelt	1997	333
3	Relativistic band structure calculation of cubic and hexagonal SiC polytypes Journal of Applied Physics ·Clas Persson, U. Lindefelt	1997	264
4	Stacking faults in3C−, 4H−,and6H−SiCpolytypes investigated by anab initiosupercell method Physical review. B, Condensed matter ·U. Lindefelt, Hisaomi Iwata, Sven Öberg, P. R. Briddon	2003	145
5	Doping-induced band edge displacements and band gap narrowing in 3C–, 4H–, 6H–SiC, and Si Journal of Applied Physics ·U. Lindefelt	1998	128
6	Auger recombination in 4H-SiC: Unusual temperature behavior Applied Physics Letters ·Augustinas Galeckas, Jan Linnros, V. Grivickas, U. Lindefelt, C. Hallin	1997	127
7	Detailed band structure for 3C-, 2H-, 4H-, 6H-SiC, and Si around the fundamental band gap Physical review. B, Condensed matter ·Clas Persson, U. Lindefelt	1996	126
8	Simulation of SiC High Power Devices physica status solidi (a) ·Mietek Bakowski, Ulf Gustafsson, U. Lindefelt	1997	114
9	A 4.5 kV 6H silicon carbide rectifier Applied Physics Letters ·Olof Kordina, J. P. Bergman, Anne Henry, Erik Janzén, Susan Savage, Julien André, L.P. Ramberg, U. Lindefelt, Willy Hermansson, K. Bergman	1995	100
10	Localized electronic states around stacking faults in silicon carbide Physical review. B, Condensed matter ·Hisaomi Iwata, U. Lindefelt, Sven Öberg, P. R. Briddon	2001	92
11	Cubic polytype inclusions in 4H–SiC Journal of Applied Physics ·Hisaomi Iwata, U. Lindefelt, Sven Öberg, P. R. Briddon	2003	79
12	Band gap narrowing in n-type and p-type 3C-, 2H-, 4H-, 6H-SiC, and Si Journal of Applied Physics ·Clas Persson, U. Lindefelt, Bo E. Sernelius	1999	77
13	Stacking faults in silicon carbide Physica B Condensed Matter ·Hisaomi Iwata, U. Lindefelt, Sven Öberg, P. R. Briddon	2003	76
14	Theory of substitutional and interstitial3dimpurities in silicon Physical review. B, Condensed matter ·Alex Zunger, U. Lindefelt	1982	75
15	Study of avalanche breakdown and impact ionization in 4H silicon carbide Journal of Electronic Materials ·Andrey O. Konstantinov, Q. Wahab, N. Nordell, U. Lindefelt	1998	73
16	Determination of the electron effective-mass tensor in 4HSiC Physical review. B, Condensed matter ·D. Volm, B. K. Meyer, D.M. Hofmann, Weimin Chen, Nguyên Tiên Són, Clas Persson, U. Lindefelt, Olof Kordina, E. Sörman, Andrey O. Konstantinov, B. Ḿonemar, Erik Janzén	1996	70
17	Electronic structure of transition-atom impurities in semiconductors: Substitutional3dimpurities in silicon Physical review. B, Condensed matter ·Alex Zunger, U. Lindefelt	1983	69
18	Heat generation in semiconductor devices Journal of Applied Physics ·U. Lindefelt	1994	68
19	Electronic structure of neutral and charged vacancies in GaAs Physical review. B, Condensed matter ·H. Q. Xu, U. Lindefelt	1990	65
20	Doping-induced strain in N-doped 4H–SiC crystals Applied Physics Letters ·H. Jacobson, Jens Birch, C. Hallin, Anne Henry, Rositsa Yakimova, T. Tuomi, Erik Janzén, U. Lindefelt	2003	51

About U. Lindefelt

U. Lindefelt is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Mechanical Engineering, having authored 88 papers that have together received 3.5k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (53 papers), Semiconductor materials and devices (39 papers), Semiconductor materials and interfaces (33 papers), Silicon and Solar Cell Technologies (14 papers), Copper Interconnects and Reliability (14 papers), Semiconductor Quantum Structures and Devices (11 papers), Surface and Thin Film Phenomena (10 papers) and Advancements in Semiconductor Devices and Circuit Design (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.0k citations), Ceramics and Composites (292 citations), Atomic and Molecular Physics, and Optics (1.2k citations), Electronic, Optical and Magnetic Materials (447 citations) and Condensed Matter Physics (209 citations). U. Lindefelt has collaborated with scholars based in Sweden, Switzerland and United States. Frequent co-authors include Clas Persson, Alex Zunger, Hisaomi Iwata, Sven Öberg, Andrey O. Konstantinov, P. R. Briddon, Q. Wahab, N. Nordell, H. Lendenmann and Peder Bergman. Their work appears in journals such as Physical review. B, Condensed matter, Journal of Applied Physics, Applied Physics Letters, Semiconductor Science and Technology and Solid State Communications.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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