I. Adesida

11.8k citations

395 papers · 9.5k · h-index 52

Impact in

Condensed Matter Physics top 0.1%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 0.2%
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies

Papers in

Electrical and Electronic Engineering 354
- Semiconductor materials and devices 200
- Advancements in Semiconductor Devices and Circuit Design 64
- Photonic and Optical Devices 52
- Radio Frequency Integrated Circuit Design 47
- Silicon Carbide Semiconductor Technologies 40
Atomic and Molecular Physics, and Optics 179
- Semiconductor Quantum Structures and Devices 128
- Semiconductor materials and interfaces 48

Co-authors: V. Kumar (51 shared papers)C. Youtsey (30 shared papers)A. T. Ping (32 shared papers)M. Asif Khan (13 shared papers)Fitih M. Mohammed (17 shared papers)Wu Lu (18 shared papers)Farid Khan (20 shared papers)Lucia Romano (5 shared papers)
Journals: Applied Physics Letters (48 papers)Electronics Letters (45 papers)IEEE Electron Device Letters (23 papers)Journal of Applied Physics (20 papers)Journal of Electronic Materials (19 papers)
Partner nations: United States South Korea Kazakhstan

In The Last Decade

I. Adesida

382 papers receiving 9.1k citations

Peers

Countries citing papers authored by I. Adesida

Since Specialization

Citations

This map shows the geographic impact of I. Adesida's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by I. Adesida with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites I. Adesida more than expected).

Fields of papers citing papers by I. Adesida

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by I. Adesida. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by I. Adesida. The network helps show where I. Adesida may publish in the future.

Co-authors

The 25 scholars most cited alongside I. Adesida, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with I. Adesida Line = papers co-authored together I. Adesida links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 395 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise IEEE Transactions on Electron Devices ·Wu Lu, Jinwei Yang, M.A. Khan, I. Adesida	2001	203
2	Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations Applied Physics Letters ·C. Youtsey, Lucia Romano, I. Adesida	1998	197
3	Recessed-gate enhancement-mode GaN HEMT with high threshold voltage Electronics Letters ·W. Lanford, Tsuyoshi Tanaka, Y. Otoki, I. Adesida	2005	197
4	AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz IEEE Electron Device Letters ·V. Kumar, Wu Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, I. Adesida	2002	191
5	Highly anisotropic photoenhanced wet etching of n-type GaN Applied Physics Letters ·C. Youtsey, I. Adesida, G. E. Bulman	1997	166
6	Metal contacts to n-type GaN Journal of Electronic Materials ·A. C. Schmitz, A. T. Ping, M. Asif Khan, Q. Chen, Jinhong Yang, I. Adesida	1998	161
7	Schottky barrier properties of various metals on n-type GaN Semiconductor Science and Technology ·A. C. Schmitz, A. T. Ping, M. Asif Khan, Q Chen, Jinhong Yang, I. Adesida	1996	161
8	Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa) Applied Physics Letters ·I. Adesida, A. Mahajan, E. Andideh, M. Asif Khan, D. T. Olsen, J. N. Kuznia	1993	139
9	Buckled and Wavy Ribbons of GaAs for High‐Performance Electronics on Elastomeric Substrates Advanced Materials ·Yugang Sun, Vivek Kumar, I. Adesida, John A. Rogers	2006	134
10	Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching Applied Physics Letters ·C. Youtsey, Lucia Romano, R. J. Molnar, I. Adesida	1999	128
11	Smooth n-type GaN surfaces by photoenhanced wet etching Applied Physics Letters ·C. Youtsey, I. Adesida, Lucia Romano, G. E. Bulman	1998	125
12	High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures Applied Physics Letters ·Farid Khan, I. Adesida	1999	122
13	Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN Journal of Applied Physics ·V. Kumar, L. Zhou, D. Selvanathan, I. Adesida	2002	112
14	A comparative study of surface passivation on AlGaN/GaN HEMTs Solid-State Electronics ·Wu Lu, V. Kumar, R. Schwindt, E. L. Piner, I. Adesida	2002	112
15	The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN Journal of Electronic Materials ·A. T. Ping, Q. Chen, Jinhong Yang, M. Asif Khan, I. Adesida	1998	108
16	Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures Semiconductor Science and Technology ·Benedict Ofuonye, Jaseun Lee, Minjun Yan, Chang-Woo Sun, Jian‐Min Zuo, I. Adesida	2014	103
17	DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates IEEE Electron Device Letters ·A. T. Ping, Q. Chen, Jinwei Yang, M.A. Khan, I. Adesida	1998	102
18	In-plane bandgap control in porous GaN through electroless wet chemical etching Applied Physics Letters ·Xiuling Li, Young-Woon Kim, Paul W. Bohn, I. Adesida	2002	99
19	Traps in AlGaN∕GaN∕SiC heterostructures studied by deep level transient spectroscopy Applied Physics Letters ·Z.-Q. Fang, D. C. Look, Dae‐Hyeong Kim, I. Adesida	2005	96
20	Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕Al∕Mo∕Au Ohmic contacts on n-GaN and AlGaN∕GaN epilayers Journal of Applied Physics ·Liang Wang, Fitih M. Mohammed, I. Adesida	2007	94

About I. Adesida

I. Adesida is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Biomedical Engineering and Electronic, Optical and Magnetic Materials, having authored 395 papers that have together received 9.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (200 papers), GaN-based semiconductor devices and materials (136 papers), Semiconductor Quantum Structures and Devices (128 papers), Advancements in Semiconductor Devices and Circuit Design (64 papers), Photonic and Optical Devices (52 papers), Semiconductor materials and interfaces (48 papers), Radio Frequency Integrated Circuit Design (47 papers) and Silicon Carbide Semiconductor Technologies (40 papers). The work is most often cited by research in Condensed Matter Physics (5.2k citations), Electrical and Electronic Engineering (7.1k citations), Electronic, Optical and Magnetic Materials (2.1k citations), Atomic and Molecular Physics, and Optics (3.0k citations) and Surfaces, Coatings and Films (443 citations). I. Adesida has collaborated with scholars based in United States, South Korea and Kazakhstan. Frequent co-authors include V. Kumar, C. Youtsey, A. T. Ping, M. Asif Khan, Fitih M. Mohammed, Wu Lu, Farid Khan, Lucia Romano, G. E. Bulman and R. Schwindt. Their work appears in journals such as Applied Physics Letters, Electronics Letters, IEEE Electron Device Letters, Journal of Applied Physics and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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