G. E. Stillman

2.9k citations

79 papers · 2.1k · h-index 26

Impact in

Instrumentation top 5%
- Advanced Optical Sensing Technologies
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 64
- Semiconductor materials and devices 26
- Advanced Semiconductor Detectors and Materials 15
- Photonic and Optical Devices 14
- Semiconductor Lasers and Optical Devices 11
Atomic and Molecular Physics, and Optics 59
- Semiconductor Quantum Structures and Devices 47
- Semiconductor materials and interfaces 11
- Quantum and electron transport phenomena 9

Co-authors: V. M. Robbins (8 shared papers)G. E. Bulman (5 shared papers)C. M. Wolfe (13 shared papers)L. W. Cook (9 shared papers)M.R. Brozel (1 shared paper)Inspec (1 shared paper)K. Hess (6 shared papers)N. Holonyak (12 shared papers)
Journals: Applied Physics Letters (33 papers)Journal of Applied Physics (12 papers)IEEE Transactions on Electron Devices (4 papers)Journal of The Electrochemical Society (3 papers)Journal of Electronic Materials (2 papers)
Partner nations: United States Germany

In The Last Decade

G. E. Stillman

77 papers receiving 1.9k citations

Peers

Countries citing papers authored by G. E. Stillman

Since Specialization

Citations

This map shows the geographic impact of G. E. Stillman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. E. Stillman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. E. Stillman more than expected).

Fields of papers citing papers by G. E. Stillman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. E. Stillman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. E. Stillman. The network helps show where G. E. Stillman may publish in the future.

Co-authors

The 25 scholars most cited alongside G. E. Stillman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. E. Stillman Line = papers co-authored together G. E. Stillman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Properties of gallium arsenide Medical Entomology and Zoology ·Inspec, M.R. Brozel, G. E. Stillman	1996	234
2	Impact ionisation in multilayered heterojunction structures Electronics Letters ·R. Chin, N. Holonyak, G. E. Stillman, J. Y. Tang, K. Hess	1980	161
3	Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements Applied Physics Letters ·L. W. Cook, G. E. Bulman, G. E. Stillman	1982	124
4	The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements IEEE Transactions on Electron Devices ·G. E. Bulman, V. M. Robbins, G. E. Stillman	1985	113
5	Experimental determination of impact ionization coefficients in IEEE Electron Device Letters ·G. E. Bulman, V. M. Robbins, Kevin F. Brennan, K. Hess, G. E. Stillman	1983	109
6	The electron velocity-field characteristic for n-In_0.53Ga_0.47As at 300 K IEEE Electron Device Letters ·T. H. Windhorn, L. W. Cook, G. E. Stillman	1982	70
7	Electroabsorption in GaAs and its application to waveguide detectors and modulators Applied Physics Letters ·G. E. Stillman, C. M. Wolfe, C. O. Bozler, J. A. Rossi	1976	62
8	An analysis of the performance of heterojunction phototransistors for fiber optic communications IEEE Transactions on Electron Devices ·R.A. Milano, P.D. Dapkus, G. E. Stillman	1982	59
9	III-V compound semiconductor devices: Optical detectors IEEE Transactions on Electron Devices ·G. E. Stillman, V. M. Robbins, N. Tabatabaie	1984	58
10	Unequal electron and hole impact ionization coefficients in GaAs Applied Physics Letters ·G. E. Stillman, C. M. Wolfe, J. A. Rossi, A.G. Foyt	1974	53
11	Impact ionization in AlxGa1−xAs for x=0.1–0.4 Applied Physics Letters ·V. M. Robbins, Susan M. Smith, G. E. Stillman	1988	50
12	Electron transport in InP at high electric fields Applied Physics Letters ·T. H. Windhorn, L. W. Cook, M. A. Haase, G. E. Stillman	1983	41
13	High mobility two-dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction Journal of Applied Physics ·W. I. Wang, E. E. Méndez, Y. Iye, B. Lee, M. H. Kim, G. E. Stillman	1986	39
14	Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm Applied Physics Letters ·G. E. Stillman, C. M. Wolfe, A.G. Foyt, W.T. Lindley	1974	38
15	Al0.5Ga0.5As-GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition Applied Physics Letters ·R.A. Milano, T. H. Windhorn, Eric R. Anderson, G. E. Stillman, Russell D. Dupuis, P.D. Dapkus	1979	37
16	Electron and hole impact ionization coefficients in (100) and in (111) Si Journal of Applied Physics ·V. M. Robbins, T. Wang, Kevin F. Brennan, K. Hess, G. E. Stillman	1985	37
17	Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodes Applied Physics Letters ·M. A. Haase, M.A. Emanuel, Stephen C. Smith, J. J. Coleman, G. E. Stillman	1987	33
18	EFFECT OF DONOR IMPURITIES ON THE DIRECT-INDIRECT TRANSITION IN Ga(As1 - xPx) Applied Physics Letters ·N. Holonyak, C. J. Nuese, M.D. Sirkis, G. E. Stillman	1966	32
19	VOLUME EXCITATION OF AN ULTRATHIN SINGLE-MODE CdSe LASER Applied Physics Letters ·G. E. Stillman, M.D. Sirkis, J. A. Rossi, M. R. Johnson, N. Holonyak	1966	31
20	High precision temperature- and energy-dependent refractive index of GaAs determined from excitation of optical waveguide eigenmodes Applied Physics Letters ·Scott Kisting, Paul W. Bohn, E. Andideh, I. Adesida, Brian T. Cunningham, G. E. Stillman, T.D. Harris	1990	30

About G. E. Stillman

G. E. Stillman is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Instrumentation and Condensed Matter Physics, having authored 79 papers that have together received 2.1k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (47 papers), Semiconductor materials and devices (26 papers), Advanced Semiconductor Detectors and Materials (15 papers), Photonic and Optical Devices (14 papers), Semiconductor materials and interfaces (11 papers), Semiconductor Lasers and Optical Devices (11 papers), Advanced Optical Sensing Technologies (9 papers) and Quantum and electron transport phenomena (9 papers). The work is most often cited by research in Instrumentation (244 citations), Atomic and Molecular Physics, and Optics (1.5k citations), Electrical and Electronic Engineering (1.7k citations), Condensed Matter Physics (201 citations) and Surfaces, Coatings and Films (61 citations). G. E. Stillman has collaborated with scholars based in United States and Germany. Frequent co-authors include V. M. Robbins, G. E. Bulman, C. M. Wolfe, L. W. Cook, M.R. Brozel, Inspec, K. Hess, N. Holonyak, J. A. Rossi and T. H. Windhorn. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, Journal of The Electrochemical Society and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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