G. E. Stillman

5.5k citations

194 papers · 4.7k · h-index 38

Impact in

Atomic and Molecular Physics, and Optics top 0.5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Quantum and electron transport phenomena
Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices
- Advanced Semiconductor Detectors and Materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Lasers and Optical Devices

Papers in

Atomic and Molecular Physics, and Optics 166
- Semiconductor Quantum Structures and Devices 147
- Semiconductor materials and interfaces 22
Electrical and Electronic Engineering 156
- Semiconductor materials and devices 67
- Advanced Semiconductor Detectors and Materials 52
- Semiconductor Lasers and Optical Devices 27
- Advancements in Semiconductor Devices and Circuit Design 20
- Chalcogenide Semiconductor Thin Films 16

Co-authors: C. M. Wolfe (22 shared papers)J. O. Dimmock (8 shared papers)B. J. Skromme (14 shared papers)N. Holonyak (20 shared papers)S. A. Stockman (19 shared papers)J. E. Baker (19 shared papers)Brian T. Cunningham (12 shared papers)T. S. Low (12 shared papers)
Journals: Applied Physics Letters (57 papers)Journal of Applied Physics (24 papers)Journal of Electronic Materials (20 papers)Journal of Crystal Growth (10 papers)IEEE Electron Device Letters (10 papers)
Partner nations: United States Canada Japan

In The Last Decade

G. E. Stillman

191 papers receiving 4.3k citations

Peers

Countries citing papers authored by G. E. Stillman

Since Specialization

Citations

This map shows the geographic impact of G. E. Stillman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. E. Stillman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. E. Stillman more than expected).

Fields of papers citing papers by G. E. Stillman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. E. Stillman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. E. Stillman. The network helps show where G. E. Stillman may publish in the future.

Co-authors

The 25 scholars most cited alongside G. E. Stillman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. E. Stillman Line = papers co-authored together G. E. Stillman links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Showing the 20 most-cited of 194 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Electron Mobility in High-Purity GaAs Journal of Applied Physics ·C. M. Wolfe, G. E. Stillman, W.T. Lindley	1970	230
2	Electrical characterization of epitaxial layers Thin Solid Films ·G. E. Stillman, C. M. Wolfe	1976	181
3	High purity GaAs prepared from trimethylgallium and arsine Journal of Crystal Growth ·P.D. Dapkus, H. M. Manasevit, K. L. Hess, T. S. Low, G. E. Stillman	1981	169
4	Magnetospectroscopy of shallow donors in GaAs Solid State Communications ·G. E. Stillman, C. M. Wolfe, J. O. Dimmock	1969	156
5	Hall coefficient factor for polar mode scattering in n-type GaAs Journal of Physics and Chemistry of Solids ·G. E. Stillman, C. M. Wolfe, J. O. Dimmock	1970	150
6	Carbon diffusion in undoped, n-type, and p-type GaAs Applied Physics Letters ·Brian T. Cunningham, L. J. Guido, J. E. Baker, J. S. Major, N. Holonyak, G. E. Stillman	1989	141
7	Effect of Te and S Donor Levels on the Properties ofGaAs1−xPxnear the Direct-Indirect Transition Physical Review ·M. G. Craford, G. E. Stillman, J. A. Rossi, N. Holonyak	1968	133
8	Ionized Impurity Density in n-Type GaAs Journal of Applied Physics ·C. M. Wolfe, G. E. Stillman, J. O. Dimmock	1970	114
9	Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride Applied Physics Letters ·Brian T. Cunningham, M. A. Haase, M. J. McCollum, J. E. Baker, G. E. Stillman	1989	105
10	Precision verification of effective mass theory for shallow donors in GaAs Solid State Communications ·G. E. Stillman, David M. Larsen, C. M. Wolfe, Richard C. Brandt	1971	101
11	Characterization of high-purity Si-doped molecular beam epitaxial GaAs Journal of Applied Physics ·B. J. Skromme, Sukanta Bose, B. Lee, T. S. Low, T. R. Lepkowski, R. Y. Dejule, G. E. Stillman, James C. M. Hwang	1985	88
12	Self-compensation of donors in high-purity GaAs Applied Physics Letters ·C. M. Wolfe, G. E. Stillman	1975	81
13	Field-Dependent Central-Cell Corrections in GaAs by Laser Spectroscopy Physical Review Letters ·H. R. Fetterman, David M. Larsen, G. E. Stillman, P. E. Tannenwald, J. Waldman	1971	76
14	LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin-layer (<500 Å) active region Applied Physics Letters ·E. A. Rezek, N. Holonyak, B. A. Vojak, G. E. Stillman, J. A. Rossi, D. L. Keune, J. D. Fairing	1977	69
15	Photoluminescence identification of the C and Be acceptor levels in InP Journal of Electronic Materials ·B. J. Skromme, G. E. Stillman, J. D. Oberstar, S. S. Chan	1984	68
16	Hydrogen passivation of C acceptors in high-purity GaAs Applied Physics Letters ·N. Pan, Sukanta Bose, M. H. Kim, G. E. Stillman, F. A. Chambers, G. Devane, C. Ito, M. Feng	1987	64
17	Growth of carbon-doped p-type InxGa1−xAs (0<x≤0.53) by metalorganic chemical vapor deposition Applied Physics Letters ·S. A. Stockman, A.W. Hanson, G. E. Stillman	1992	60
18	Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAs Solid State Communications ·J. A. Rossi, C. M. Wolfe, G. E. Stillman, J. O. Dimmock	1970	59
19	Carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source Applied Physics Letters ·Brian T. Cunningham, G. E. Stillman, Gordon Jackson	1990	57
20	Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD Journal of Electronic Materials ·S. A. Stockman, A.W. Hanson, S. M. Lichtenthal, M.T. Fresina, G. E. Höfler, K. C. Hsieh, G. E. Stillman	1992	55

About G. E. Stillman

G. E. Stillman is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics, Materials Chemistry and Biomedical Engineering, having authored 194 papers that have together received 4.7k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (147 papers), Semiconductor materials and devices (67 papers), Advanced Semiconductor Detectors and Materials (52 papers), GaN-based semiconductor devices and materials (33 papers), Semiconductor Lasers and Optical Devices (27 papers), Semiconductor materials and interfaces (22 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Chalcogenide Semiconductor Thin Films (16 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (3.9k citations), Electrical and Electronic Engineering (3.7k citations), Condensed Matter Physics (738 citations), Materials Chemistry (949 citations) and Surfaces, Coatings and Films (124 citations). G. E. Stillman has collaborated with scholars based in United States, Canada and Japan. Frequent co-authors include C. M. Wolfe, J. O. Dimmock, B. J. Skromme, N. Holonyak, S. A. Stockman, J. E. Baker, Brian T. Cunningham, T. S. Low, L. W. Cook and M. M. Tashima. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Electronic Materials, Journal of Crystal Growth and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

G. E. Stillman

Impact in

Papers in i

In The Last Decade

G. E. Stillman

Peers

Countries citing papers authored by G. E. Stillman

Fields of papers citing papers by G. E. Stillman

All Works

About G. E. Stillman

Explore authors with similar magnitude of impact

Papers in