J.D. Brown

1.2k citations

28 papers · 871 · h-index 14

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 26
- GaN-based semiconductor devices and materials 25
Electronic, Optical and Magnetic Materials 12
- Ga2O3 and related materials 12

Co-authors: J. F. Schetzina (17 shared papers)Edwin L. Piner (5 shared papers)Sameer Singhal (4 shared papers)Andrei Vescan (4 shared papers)Robert Therrien (3 shared papers)Zhonghai Yu (10 shared papers)Mark A. Johnson (10 shared papers)J. W. Cook (9 shared papers)
Journals: MRS Internet Journal of Nitride Semiconductor Research (8 papers)Journal of Crystal Growth (1 paper)Electronics Letters (1 paper)Solid-State Electronics (1 paper)IEEE Electron Device Letters (1 paper)
Partner nations: United States China United Kingdom

In The Last Decade

J.D. Brown

26 papers receiving 825 citations

Peers

Countries citing papers authored by J.D. Brown

Since Specialization

Citations

This map shows the geographic impact of J.D. Brown's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.D. Brown with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.D. Brown more than expected).

Fields of papers citing papers by J.D. Brown

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.D. Brown. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.D. Brown. The network helps show where J.D. Brown may publish in the future.

Co-authors

The 25 scholars most cited alongside J.D. Brown, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.D. Brown Line = papers co-authored together J.D. Brown links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 28 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	12 W/mm AlGaN–GaN HFETs on Silicon Substrates IEEE Electron Device Letters ·J. W. Johnson, Edwin L. Piner, Andrei Vescan, Robert Therrien, P. Rajagopal, John C. Roberts, J.D. Brown, Sameer Singhal	2004	193
2	Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys MRS Internet Journal of Nitride Semiconductor Research ·John F. Muth, J.D. Brown, Mark A. Johnson, Zhonghai Yu, Robert M. Kolbas, J. W. Cook, J. F. Schetzina	1999	138
3	Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC Electronics Letters ·Gary E. Bulman, Kathleen Doverspike, Scott T. Sheppard, T. Warren Weeks, Hoyoul Kong, Heidi Dieringer, John A. Edmond, J.D. Brown	1997	114
4	AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates Solid-State Electronics ·J.D. Brown, Ric Borges, Edwin L. Piner, Andrei Vescan, Sameer Singhal, Robert Therrien	2002	101
5	Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes MRS Internet Journal of Nitride Semiconductor Research ·J.D. Brown, Zhonghai Yu, J. Matthews, S. Harney, J. Boney, J. F. Schetzina, J. D. Benson, Kim Dang	1999	53
6	Solar-Blind AlGaN Heterostructure Photodiodes MRS Internet Journal of Nitride Semiconductor Research ·J.D. Brown, Jizhong Li, Purushothaman Srinivasan, J. Matthews, J. F. Schetzina	2000	42
7	Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence MRS Internet Journal of Nitride Semiconductor Research ·Zhonghai Yu, Mark A. Johnson, Thomas McNulty, J.D. Brown, J. W. Cook, J. F. Schetzina	1998	41
8	UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes MRS Internet Journal of Nitride Semiconductor Research ·J.D. Brown, J. Boney, John A. Matthews, Purushothaman Srinivasan, J. F. Schetzina, Thomas Nohava, Wei Yang, Subash Krishnankutty	2000	35
9	AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Andrei Vescan, J.D. Brown, J. W. Johnson, Robert Therrien, Thomas Gehrke, P. Rajagopal, John C. Roberts, Sameer Singhal	2002	25
10	Study of the epitaxial–lateral-overgrowth (ELO) process for GaN on sapphire Journal of Crystal Growth ·Zhonghai Yu, Mark A. Johnson, J.D. Brown, Nadia A. El-Masry, J. W. Cook, J. F. Schetzina	1998	23
11	Large-Area, Device Quality GaN on Si Using a Novel Transition Layer Scheme MRS Proceedings ·Pradeep Rajagopal, Thomas Gehrke, John C. Roberts, J.D. Brown, T. Warren Weeks, Edwin L. Piner, Kevin J. Linthicum	2002	18
12	Absorption Coefficient and Refractive Index of GaN, AIN and AlGaN Alloys MRS Proceedings ·John F. Muth, J.D. Brown, Mark A. Johnson, Zhonghai Yu, Robert M. Kolbas, J. W. Cook, J. F. Schetzina	1998	17
13	Status of Nitride Based Light Emitting and Laser Diodes on SiC MRS Proceedings ·Kathleen Doverspike, Gary E. Bulman, Scott T. Sheppard, Hoyoul Kong, Michelle T. Leonard, Heidi Dieringer, T. Warren Weeks, John A. Edmond	1997	15
14	Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Mark A. Johnson, J.D. Brown, Nadia A. El-Masry, J. W. Cook, J. F. Schetzina, Hoyoul Kong, John A. Edmond	1998	14
15	Characteristics of microwave power GaN HEMTs on 4-inch Si wafers Sujan K. Manohar, Ananthakrishnan Narayanan, A. Keerti, Anh‐Vu Pham, J.D. Brown, Ric Borges, Kevin J. Linthicum	2003	11
16	Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride Journal of Electronic Materials ·Mark A. Johnson, Zhonghai Yu, J.D. Brown, Nadia A. El-Masry, J. W. Cook, J. F. Schetzina	1999	5
17	High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays MRS Internet Journal of Nitride Semiconductor Research ·J.D. Brown, J. Matthews, S. Harney, J. Boney, J. F. Schetzina, J. D. Benson, Khoa V. Dang, Thomas Nohava	2000	4
18	Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates MRS Internet Journal of Nitride Semiconductor Research ·Zhonghai Yu, Mark A. Johnson, J.D. Brown, Nadia A. El-Masry, John F. Muth, J. W. Cook, J. F. Schetzina, Kevin W. Haberern	1999	4
19	Gallium Nitride on Silicon HEMTs for Wireless Infrastructure Applications, Thermal Design and Performance AMS Acta (University of Bologna) ·Sameer Singhal, J.D. Brown, Ric Borges, Edwin L. Piner, Walter Nagy, Andrei Vescan	2002	3
20	High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays MRS Proceedings ·J.D. Brown, J. Matthews, S. Harney, J. Boney, J. F. Schetzina, J. D. Benson, Khoa V. Dang, Thomas Nohava	1999	3

About J.D. Brown

J.D. Brown is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Materials Chemistry and Electrical and Electronic Engineering, having authored 28 papers that have together received 871 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (12 papers), Semiconductor Quantum Structures and Devices (10 papers), ZnO doping and properties (10 papers), Photocathodes and Microchannel Plates (5 papers), Metal and Thin Film Mechanics (3 papers), Semiconductor materials and devices (3 papers) and Radio Frequency Integrated Circuit Design (3 papers). The work is most often cited by research in Condensed Matter Physics (786 citations), Electronic, Optical and Magnetic Materials (382 citations), Atomic and Molecular Physics, and Optics (262 citations), Electrical and Electronic Engineering (420 citations) and Mechanics of Materials (120 citations). J.D. Brown has collaborated with scholars based in United States, China and United Kingdom. Frequent co-authors include J. F. Schetzina, Edwin L. Piner, Sameer Singhal, Andrei Vescan, Robert Therrien, Zhonghai Yu, Mark A. Johnson, J. W. Cook, Kevin J. Linthicum and John C. Roberts. Their work appears in journals such as MRS Internet Journal of Nitride Semiconductor Research, Journal of Crystal Growth, Electronics Letters, Solid-State Electronics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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