J.D. Brown

1.2k citations

27 papers · 816 · h-index 13

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 26
- GaN-based semiconductor devices and materials 25
Electronic, Optical and Magnetic Materials 12
- Ga2O3 and related materials 12

Co-authors: J. F. Schetzina (17 shared papers)E. L. Piner (5 shared papers)Andrei Vescan (4 shared papers)Sameer Singhal (4 shared papers)R. Therrien (3 shared papers)Zhonghai Yu (10 shared papers)Mark A. Johnson (10 shared papers)J. W. Cook (9 shared papers)
Journals: MRS Internet Journal of Nitride Semiconductor Research (8 papers)Journal of Crystal Growth (1 paper)Journal of Electronic Materials (1 paper)IEEE Electron Device Letters (1 paper)Electronics Letters (1 paper)
Partner nations: United States United Kingdom China

In The Last Decade

J.D. Brown

25 papers receiving 768 citations

Peers

Countries citing papers authored by J.D. Brown

Since Specialization

Citations

This map shows the geographic impact of J.D. Brown's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.D. Brown with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.D. Brown more than expected).

Fields of papers citing papers by J.D. Brown

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.D. Brown. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.D. Brown. The network helps show where J.D. Brown may publish in the future.

Co-authors

The 25 scholars most cited alongside J.D. Brown, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.D. Brown Line = papers co-authored together J.D. Brown links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 27 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	12 W/mm AlGaN–GaN HFETs on Silicon Substrates IEEE Electron Device Letters ·J. W. Johnson, E. L. Piner, Andrei Vescan, R. Therrien, P. Rajagopal, J. C. Roberts, J.D. Brown, Sameer Singhal, K. J. Linthicum	2004	183
2	Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys MRS Internet Journal of Nitride Semiconductor Research ·John F. Muth, J.D. Brown, Mark A. Johnson, Zhonghai Yu, R. M. Kolbas, J. W. Cook, J. F. Schetzina	1999	125
3	Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC Electronics Letters ·G. E. Bulman, K. Doverspike, S.T. Sheppard, T. W. Weeks, Hoyoul Kong, H. Dieringer, J. A. Edmond, J.D. Brown, J.T. Swindell, J. F. Schetzina	1997	112
4	AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates Solid-State Electronics ·J.D. Brown, R. Borges, E. L. Piner, Andrei Vescan, Sameer Singhal, R. Therrien	2002	99
5	Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes MRS Internet Journal of Nitride Semiconductor Research ·J.D. Brown, Zhonghai Yu, J. Matthews, S. Harney, J. Boney, J. F. Schetzina, J. D. Benson, Kim Dang, C. W. Terrill, Thomas Nohava, Wei Yang, S. Krishnankutty	1999	49
6	Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence MRS Internet Journal of Nitride Semiconductor Research ·Zhonghai Yu, Mark A. Johnson, Thomas McNulty, J.D. Brown, J. W. Cook, J. F. Schetzina	1998	39
7	Solar-Blind AlGaN Heterostructure Photodiodes MRS Internet Journal of Nitride Semiconductor Research ·J.D. Brown, Jizhong Li, P. Srinivasan, J. Matthews, J. F. Schetzina	2000	38
8	UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes MRS Internet Journal of Nitride Semiconductor Research ·J.D. Brown, J. Boney, J. A. Matthews, P. Srinivasan, J. F. Schetzina, Thomas Nohava, Wei Yang, S. Krishnankutty	2000	31
9	AlGaN/GaN HFETs on 100 mm Silicon Substrates for Commercial Wireless Applications Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Andrei Vescan, J.D. Brown, J. W. Johnson, R. Therrien, Thomas Gehrke, P. Rajagopal, J. C. Roberts, Sameer Singhal, W. Nagy, R. Borges, E. L. Piner, K. J. Linthicum	2002	25
10	Study of the epitaxial–lateral-overgrowth (ELO) process for GaN on sapphire Journal of Crystal Growth ·Zhonghai Yu, Mark A. Johnson, J.D. Brown, N. A. El-Masry, J. W. Cook, J. F. Schetzina	1998	20
11	Absorption Coefficient and Refractive Index of GaN, AIN and AlGaN Alloys MRS Proceedings ·John F. Muth, J.D. Brown, Mark A. Johnson, Zhonghai Yu, R. M. Kolbas, J. W. Cook, J. F. Schetzina	1998	17
12	Large-Area, Device Quality GaN on Si Using a Novel Transition Layer Scheme MRS Proceedings ·Pradeep Rajagopal, Thomas Gehrke, J. C. Roberts, J.D. Brown, T. W. Weeks, E. L. Piner, K. J. Linthicum	2002	17
13	Status of Nitride Based Light Emitting and Laser Diodes on SiC MRS Proceedings ·K. Doverspike, G. E. Bulman, S.T. Sheppard, Hoyoul Kong, M. Leonard, H. Dieringer, T. W. Weeks, J. A. Edmond, J.D. Brown, J. T. Swindle, J. F. Schetzina, Yoon‐Kyu Song, Martin Kuball, A. V. Nurmikko	1997	13
14	Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Mark A. Johnson, J.D. Brown, N. A. El-Masry, J. W. Cook, J. F. Schetzina, Hoyoul Kong, J. A. Edmond	1998	12
15	Characteristics of microwave power GaN HEMTs on 4-inch Si wafers Sujan K. Manohar, A. Narayanan, A. Keerti, Anh‐Vu Pham, J.D. Brown, R. Borges, K. J. Linthicum	2003	11
16	Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride Journal of Electronic Materials ·Mark A. Johnson, Zhonghai Yu, J.D. Brown, N. A. El-Masry, J. W. Cook, J. F. Schetzina	1999	5
17	High-Sensitivity Visible-Blind AlGaN Photodiodes and Photodiode Arrays MRS Internet Journal of Nitride Semiconductor Research ·J.D. Brown, J. Matthews, S. Harney, J. Boney, J. F. Schetzina, J. D. Benson, Khoa V. Dang, Thomas Nohava, Wei Yang, S. Krishnankutty	2000	4
18	Gallium Nitride on Silicon HEMTs for Wireless Infrastructure Applications, Thermal Design and Performance AMS Acta (University of Bologna) ·Sameer Singhal, J.D. Brown, R. Borges, E. L. Piner, W. Nagy, Andrei Vescan	2002	3
19	A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications MRS Internet Journal of Nitride Semiconductor Research ·Mark A. Johnson, Zhonghai Yu, J.D. Brown, Franz A. Koeck, N. A. El-Masry, Hoyoul Kong, J. A. Edmond, J. W. Cook, J. F. Schetzina	1999	2
20	The First Nitride Laser Diode on Silicon Carbide MRS Proceedings ·J.D. Brown, J.T. Swindell, Mark A. Johnson, Zhonghai Yu, J. F. Schetzina, G. E. Bulman, K. Doverspike, S.T. Sheppard, T. W. Weeks, M. Leonard, Hoyoul Kong, H. Dieringer, C. Carter, J. A. Edmond	1997	2

About J.D. Brown

J.D. Brown is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Materials Chemistry and Electrical and Electronic Engineering, having authored 27 papers that have together received 816 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (25 papers), Ga2O3 and related materials (12 papers), Semiconductor Quantum Structures and Devices (10 papers), ZnO doping and properties (10 papers), Photocathodes and Microchannel Plates (5 papers), Radio Frequency Integrated Circuit Design (3 papers), Metal and Thin Film Mechanics (3 papers) and Semiconductor materials and devices (3 papers). The work is most often cited by research in Condensed Matter Physics (741 citations), Electronic, Optical and Magnetic Materials (361 citations), Atomic and Molecular Physics, and Optics (243 citations), Electrical and Electronic Engineering (404 citations) and Mechanics of Materials (117 citations). J.D. Brown has collaborated with scholars based in United States, United Kingdom and China. Frequent co-authors include J. F. Schetzina, E. L. Piner, Andrei Vescan, Sameer Singhal, R. Therrien, Zhonghai Yu, Mark A. Johnson, J. W. Cook, K. J. Linthicum and J. C. Roberts. Their work appears in journals such as MRS Internet Journal of Nitride Semiconductor Research, Journal of Crystal Growth, Journal of Electronic Materials, IEEE Electron Device Letters and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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