Bruce B. Doris

3.5k citations

102 papers · 2.9k · h-index 29

Impact in

Structural Biology top 2%
Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design
- Advanced Memory and Neural Computing

Papers in

Electrical and Electronic Engineering 98
- Semiconductor materials and devices 81
- Advancements in Semiconductor Devices and Circuit Design 74
- Integrated Circuits and Semiconductor Failure Analysis 24
- Ferroelectric and Negative Capacitance Devices 20
- Silicon Carbide Semiconductor Technologies 14
- Silicon and Solar Cell Technologies 12
- Thin-Film Transistor Technologies 9
Atomic and Molecular Physics, and Optics 16

Co-authors: Meikei Ieong (8 shared papers)Ken Rim (4 shared papers)Jakub T. Kedzierski (4 shared papers)Min Yang (1 shared paper)Vamsi K. Paruchuri (7 shared papers)Alain C. Diebold (6 shared papers)Vijay Narayanan (4 shared papers)James H. Stathis (4 shared papers)
Journals: IEEE Electron Device Letters (6 papers)Applied Physics Letters (5 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)Solid-State Electronics (2 papers)Electrochemical and Solid-State Letters (1 paper)
Partner nations: United States France Czechia

In The Last Decade

Bruce B. Doris

98 papers receiving 2.8k citations

Peers

Countries citing papers authored by Bruce B. Doris

Since Specialization

Citations

This map shows the geographic impact of Bruce B. Doris's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bruce B. Doris with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bruce B. Doris more than expected).

Fields of papers citing papers by Bruce B. Doris

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bruce B. Doris. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bruce B. Doris. The network helps show where Bruce B. Doris may publish in the future.

Co-authors

The 25 scholars most cited alongside Bruce B. Doris, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Bruce B. Doris Line = papers co-authored together Bruce B. Doris links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 102 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Silicon Device Scaling to the Sub-10-nm Regime Science ·Meikei Ieong, Bruce B. Doris, Jakub T. Kedzierski, Ken Rim, Min Yang	2004	485
2	A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates Sufi Zafar, Y. Kim, Vijay Narayanan, Cyril Cabral, Vamsi K. Paruchuri, Bruce B. Doris, James H. Stathis, Agnese Callegari	2006	168
3	Extreme scaling with ultra-thin Si channel MOSFETs Bruce B. Doris, Meikei Ieong, Thomas Kanarsky, Ying Zhang, R. Roy, Omer Dokumaci, Zhibin Ren, F. Jamin	2003	145
4	Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography Physical Review Letters ·Michael A. Gribelyuk, Martha R. McCartney, Jing Li, Ch. S. N. Murthy, Paul A. Ronsheim, Bruce B. Doris, J. S. McMurray, Shashikant G. Hegde	2002	94
5	Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers Applied Physics Letters ·Supratik Guha, Vamsi K. Paruchuri, Matthew Copel, Vijay Narayanan, Y. Y. Wang, Philip E. Batson, N. A. Bojarczuk, B.P. Linder	2007	82
6	Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond Hikaru Kawasaki, V. Basker, T. Yamashita, Yu Zhu, Jonathan Faltermeier, S. Schmitz, Jennifer Cummings, Siva Kanakasabapathy	2009	81
7	Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications Kangguo Cheng, Ali Khakifirooz, P. Kulkarni, Shom S. Ponoth, James Kuss, Davood Shahrjerdi, L. F. Edge, Anne S. Kimball	2009	75
8	High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond Qianlong Liu, Maud Vinet, J. Gimbert, N. Loubet, R. Wacquez, L. Grenouillet, Y. Le Tiec, Ali Khakifirooz	2013	75
9	14nm FDSOI technology for high speed and energy efficient applications O. Weber, E. Josse, F. Andrieu, A. Cros, Emmanuel Richard, Pierre Perreau, Elise Baylac, N. Degors	2014	74
10	Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond F. Andrieu, O. Weber, J. Mazurier, Olivier Thomas, J-P. Noel, Claire Fenouillet-Beranger, J-P. Mazellier, Pierre Perreau	2010	74
11	Randomly oriented Angstrom-scale microroughness at the Si(100)/SiO2 interface probed by optical second harmonic generation Applied Physics Letters ·Jerry I. Dadap, Bruce B. Doris, Qiwen Deng, Michael Downer, John K. Lowell, Alain C. Diebold	1994	71
12	Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond Qijiong Liu, Akira YAGISHITA, N. Loubet, Ali Khakifirooz, P. Kulkarni, Tsuyoshi Yamamoto, Kangguo Cheng, M. Fujiwara	2010	60
13	High-performance high-κ/metal gates for 45nm CMOS and beyond with gate-first processing Michael P Chudzik, Bruce B. Doris, Rongcheng Mo, Jeffrey W. Sleight, E. Cartier, Charlotte DeWan, D. Park, H. Bu	2007	58
14	High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET K. Cheng, Ali Khakifirooz, N. Loubet, Scott Luning, Toshiharu Nagumo, Maud Vinet, Q. Liu, A. Reznicek	2012	58
15	Band-Edge High-Performance High-k/Metal Gate n-MOSFETs Using Cap Layers Containing Group IIA and IIIB Elements with Gate-First Processing for 45 nm and Beyond T. C. Chen, GHAVAM G. SHAHIDI, Supratik Guha, Meikei Ieong, Michael P Chudzik, R. Jammy, Paul Ronsheim, Philip E. Batson	2006	56
16	Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance Isaac Lauer, N. Loubet, S.D. Kim, John A. Ott, Sylvie Mignot, R. Venigalla, Tomohiro YAMASHITA, Theodorus E. Standaert	2015	55
17	A 0.063 µm2 FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch V. Basker, Theodorus E. Standaert, Hikaru Kawasaki, Chun-Chen Yeh, K. Maitra, Tomohiro YAMASHITA, Jonathan Faltermeier, Hemant Adhikari	2010	55
18	FINFET technology featuring high mobility SiGe channel for 10nm and beyond Dechao Guo, G. Karve, Gen Tsutsui, KY Lim, Robert R. Robison, Terence B. Hook, Reinaldo A. Vega, D. Liu	2016	53
19	Device design considerations for ultra-thin SOI MOSFETs Bruce B. Doris, Meikei Ieong, Tinggang Zhu, Yifan Zhang, Michelle L. Steen, Wesley C. Natzle, Sergio Callegari, Vijay Narayanan	2003	48
20	UTBB FDSOI transistors with dual STI for a multi-Vt strategy at 20nm node and below L. Grenouillet, Maud Vinet, J. Gimbert, Bastien Giraud, Jean-Philippe Noël, Qijiong Liu, Prasanna Khare, M.-A. Jaud	2012	43

About Bruce B. Doris

Bruce B. Doris is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Surfaces, Coatings and Films and Electronic, Optical and Magnetic Materials, having authored 102 papers that have together received 2.9k indexed citations. Recurring topics across this work include Semiconductor materials and devices (81 papers), Advancements in Semiconductor Devices and Circuit Design (74 papers), Integrated Circuits and Semiconductor Failure Analysis (24 papers), Ferroelectric and Negative Capacitance Devices (20 papers), Silicon Carbide Semiconductor Technologies (14 papers), Silicon and Solar Cell Technologies (12 papers), Thin-Film Transistor Technologies (9 papers) and Nanowire Synthesis and Applications (7 papers). The work is most often cited by research in Structural Biology (84 citations), Electrical and Electronic Engineering (2.6k citations), Atomic and Molecular Physics, and Optics (449 citations), Surfaces, Coatings and Films (92 citations) and Biomedical Engineering (460 citations). Bruce B. Doris has collaborated with scholars based in United States, France and Czechia. Frequent co-authors include Meikei Ieong, Ken Rim, Jakub T. Kedzierski, Min Yang, Vamsi K. Paruchuri, Alain C. Diebold, Vijay Narayanan, James H. Stathis, Michael P Chudzik and Y. Kim. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Solid-State Electronics and Electrochemical and Solid-State Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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