Barry M. Doyle

3.3k citations

60 papers · 2.2k · 1 hit paper · h-index 16

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Low-power high-performance VLSI design
- Silicon Carbide Semiconductor Technologies
Hardware and Architecture top 5%

Papers in

Electrical and Electronic Engineering 25
- Semiconductor materials and devices 23
- Advancements in Semiconductor Devices and Circuit Design 22
- Integrated Circuits and Semiconductor Failure Analysis 7
- Ferroelectric and Negative Capacitance Devices 5
Economics and Econometrics 15
- Historical Economic and Social Studies 12

Co-authors: J. Kavalieros (11 shared papers)M. Doczy (10 shared papers)Suman Datta (7 shared papers)R. Chau (10 shared papers)M. Metz (6 shared papers)M. Radosavljević (5 shared papers)K. Mistry (5 shared papers)A. Majumdar (3 shared papers)
Journals: IEEE Electron Device Letters (5 papers)IEEE Transactions on Electron Devices (4 papers)Urban History (3 papers)European Review of History Revue européenne d histoire (3 papers)Parliamentary History (2 papers)
Partner nations: United Kingdom United States Canada

In The Last Decade

Barry M. Doyle

50 papers receiving 2.0k citations

Barry M. Doyle's Hit Papers

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Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications 2005 · 515 citations

Peers

Countries citing papers authored by Barry M. Doyle

Since Specialization

Citations

This map shows the geographic impact of Barry M. Doyle's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Barry M. Doyle with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Barry M. Doyle more than expected).

Fields of papers citing papers by Barry M. Doyle

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Barry M. Doyle. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Barry M. Doyle. The network helps show where Barry M. Doyle may publish in the future.

Co-authors

The 25 scholars most cited alongside Barry M. Doyle, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Barry M. Doyle Line = papers co-authored together Barry M. Doyle links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 60 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications IEEE Transactions on Nanotechnology ·(unknown), Suman Datta, M. Doczy, Barry M. Doyle, (unknown), J. Kavalieros, A. Majumdar, (unknown), M. Radosavljević Hit paper breakdown →	2005	515
2	High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics IEEE Electron Device Letters ·R. Chau, Suman Datta, M. Doczy, Barry M. Doyle, J. Kavalieros, M. Metz	2004	369
3	Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2<or=V/sub g/>or=V/sub d/) during hot-carrier stressing of n-MOS transistors IEEE Transactions on Electron Devices ·Barry M. Doyle, Marc Bourcerie, J.-C. Marchetaux, A. Boudou	1990	187
4	Tri-Gate Transistor Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering J. Kavalieros, Barry M. Doyle, Suman Datta, G. Dewey, M. Doczy, B. Jin, D. Lionberger, M. Metz, W. Rachmady, M. Radosavljević, Uday Shah, N. Zelick, R. Chau	2006	178
5	Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout Barry M. Doyle, B. I. Boyanov, Suman Datta, M. Doczy, S.A. Hareland, B. Jin, J. Kavalieros, T. Linton, R. Rios, R. Chau	2004	163
6	A 90-nm Variable Frequency Clock System for a Power-Managed Itanium Architecture Processor IEEE Journal of Solid-State Circuits ·Tim Fischer, J. Desai, Barry M. Doyle, Samuel Naffziger, B.J. Patella	2005	110
7	Clock distribution on a dual-core, multi-threaded Itanium-family processor Patrick Mahoney, E. Fetzer, Barry M. Doyle, Samuel Naffziger	2005	85
8	30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays R. Chau, J. Kavalieros, B. Roberds, Richard E. Schenker, D. Lionberger, Douglas W. Barlage, Barry M. Doyle, Reza Arghavani, A. Murthy, G. Dewey	2002	81
9	A 50 nm depleted-substrate CMOS transistor (DST) R. Chau, J. Kavalieros, Barry M. Doyle, A. Murthy, N. Paulsen, D. Lionberger, Douglas W. Barlage, Reza Arghavani, B. Roberds, M. Doczy	2002	74
10	AC versus DC hot-carrier degradation in n-channel MOSFETs IEEE Transactions on Electron Devices ·K. Mistry, Barry M. Doyle	1993	58
11	The role of electron trap creation in enhanced hot-carrier degradation during AC stress (n-channel MOSFET) IEEE Electron Device Letters ·K. Mistry, Barry M. Doyle	1990	43
12	Silicon nano-transistors and breaking the 10 nm physical gate length barrier R. Chau, Barry M. Doyle, M. Doczy, Suman Datta, S.A. Hareland, B. Jin, J. Kavalieros, M. Metz	2004	35
13	High-frequency response of 100 nm integrated CMOS transistors with high-K gate dielectrics Douglas W. Barlage, Reza Arghavani, G. Dewey, M. Doczy, Barry M. Doyle, J. Kavalieros, A. Murthy, B. Roberds, P. Stokley, R. Chau	2002	29
14	Simultaneous growth of different thickness gate oxides in silicon CMOS processing IEEE Electron Device Letters ·Barry M. Doyle, H. Rahimpour Soleimani, Ara Philipossian	1995	24
15	A model for AC hot-carrier degradation in n-channel MOSFETs IEEE Electron Device Letters ·K. Mistry, Barry M. Doyle	1991	20
16	Measurement of very low tunneling current density in SiO/sub 2/ using the floating-gate technique IEEE Electron Device Letters ·Bruce J. Fishbein, D.B. Krakauer, Barry M. Doyle	1991	17
17	How do hot carriers degrade n-channel MOSFETs? IEEE Circuits and Devices Magazine ·K. Mistry, Barry M. Doyle	1995	14
18	The Politics of Hospital Provision in Early Twentieth-Century Britain Research Explorer (The University of Manchester) ·Barry M. Doyle	2015	14
19	Advanced CMOS transistors in the nanotechnology era for high-performance, low-power logic applications R. Chau, M. Doczy, Barry M. Doyle, Suman Datta, G. Dewey, J. Kavalieros, B. Jin, M. Metz, A. Majumdar, M. Radosavljević	2004	12
20	Healthcare before Welfare States: Hospitals in Early Twentieth Century England and France Canadian Journal of Health History ·Barry M. Doyle	2016	10

About Barry M. Doyle

Barry M. Doyle is a scholar working on Electrical and Electronic Engineering, Economics and Econometrics, History, Clinical Psychology and Political Science and International Relations, having authored 60 papers that have together received 2.2k indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Historical Economic and Social Studies (12 papers), Historical Studies on Reproduction, Gender, Health, and Societal Changes (11 papers), Historical Psychiatry and Medical Practices (10 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Ferroelectric and Negative Capacitance Devices (5 papers) and Political and Economic history of UK and US (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.9k citations), Hardware and Architecture (137 citations), Biomedical Engineering (478 citations), Atomic and Molecular Physics, and Optics (254 citations) and Materials Chemistry (318 citations). Barry M. Doyle has collaborated with scholars based in United Kingdom, United States and Canada. Frequent co-authors include J. Kavalieros, M. Doczy, Suman Datta, R. Chau, M. Metz, M. Radosavljević, K. Mistry, A. Majumdar, A. Boudou and J.-C. Marchetaux. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Urban History, European Review of History Revue européenne d histoire and Parliamentary History.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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