James C. Gallagher
About
James C. Gallagher has authored 37 papers that have received a total of 395 indexed citations.
This includes 28 papers in Condensed Matter Physics, 21 papers in Electrical and Electronic Engineering and 16 papers in Electronic, Optical and Magnetic Materials. The topics of these papers are GaN-based semiconductor devices and materials (26 papers), Ga2O3 and related materials (14 papers) and Silicon Carbide Semiconductor Technologies (13 papers). James C. Gallagher is often cited by papers focused on GaN-based semiconductor devices and materials (26 papers), Ga2O3 and related materials (14 papers) and Silicon Carbide Semiconductor Technologies (13 papers) and collaborates with scholars based in United States, Germany and Canada. James C. Gallagher's co-authors include Karl D. Hobart, Travis J. Anderson, Andrew D. Koehler, Marko J. Tadjer and Michael A. Mastro and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.
In The Last Decade
Explore authors with similar magnitude of impact
Top journals papers by Masahiro Chatani are published in Top fields papers by Wenjing Li are about Top countries impacted by papers by Marcelo Coertjens Top countries impacted by papers by Víctor Eisner Top fields papers by Yu‐Shan Wu are about Top fields papers by Alessia d’Arma are about Top countries impacted by papers by Véronique Dumestre-Toulet Top authors papers by Byoung-Uhn Bae are co-authored with