Tamara Isaacs‐Smith

1.4k citations

78 papers · 1.1k · h-index 19

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials
- Copper Interconnects and Reliability

Papers in

Electrical and Electronic Engineering 69
- Silicon Carbide Semiconductor Technologies 43
- Semiconductor materials and devices 41
- Thin-Film Transistor Technologies 8
- Integrated Circuits and Semiconductor Failure Analysis 7
- Advancements in Semiconductor Devices and Circuit Design 7
Atomic and Molecular Physics, and Optics 21
- Semiconductor materials and interfaces 19

Co-authors: John R. Williams (46 shared papers)Sarit Dhar (16 shared papers)L. C. Feldman (13 shared papers)A. C. Ahyi (18 shared papers)Yogesh Sharma (8 shared papers)J. Crofton (7 shared papers)Suzanne E. Mohney (5 shared papers)Yi Xu (4 shared papers)
Journals: Journal of Electronic Materials (7 papers)Applied Physics Letters (5 papers)Journal of Applied Physics (5 papers)IEEE Electron Device Letters (3 papers)Journal of Physics Condensed Matter (3 papers)
Partner nations: United States Japan China

In The Last Decade

Tamara Isaacs‐Smith

76 papers receiving 1.1k citations

Peers

Countries citing papers authored by Tamara Isaacs‐Smith

Since Specialization

Citations

This map shows the geographic impact of Tamara Isaacs‐Smith's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tamara Isaacs‐Smith with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tamara Isaacs‐Smith more than expected).

Fields of papers citing papers by Tamara Isaacs‐Smith

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tamara Isaacs‐Smith. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tamara Isaacs‐Smith. The network helps show where Tamara Isaacs‐Smith may publish in the future.

Co-authors

The 25 scholars most cited alongside Tamara Isaacs‐Smith, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Tamara Isaacs‐Smith Line = papers co-authored together Tamara Isaacs‐Smith links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 78 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation IEEE Electron Device Letters ·Gang Liu, A. C. Ahyi, Yi Xu, Tamara Isaacs‐Smith, Yogesh Sharma, John Williams, L. C. Feldman, Sarit Dhar	2013	95
2	Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Solid-State Electronics ·Yi Zhou, Claude Ahyi, Tamara Isaacs‐Smith, Michael J. Bozack, Chin‐Che Tin, John R. Williams, Minseo Park, An-Jen Cheng, Jung‐Hyun Park, Dong‐Joo Kim, Dake Wang, Edward A. Preble, A. Hanser, K. R. Evans	2007	68
3	Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC Journal of Applied Physics ·Sarit Dhar, L. C. Feldman, Sicong Wang, Tamara Isaacs‐Smith, John R. Williams	2005	66
4	High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer IEEE Electron Device Letters ·Yogesh Sharma, A. C. Ahyi, Tamara Isaacs‐Smith, Aaron Modic, M. Park, Yi Xu, Eric Garfunkel, Sarit Dhar, L. C. Feldman, John R. Williams	2013	65
5	Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(1120) 4H–SiC interface Applied Physics Letters ·Sarit Dhar, YONG-WON SONG, L. C. Feldman, Tamara Isaacs‐Smith, C. C. Tin, John R. Williams, Gil Yong Chung, Tomoaki Nishimura, D. Starodub, T. Gustafsson, Eric Garfunkel	2004	63
6	Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC Solid-State Electronics ·J. Crofton, Suzanne E. Mohney, John R. Williams, Tamara Isaacs‐Smith	2002	63
7	Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC Journal of Applied Physics ·X. D. Chen, Sarit Dhar, Tamara Isaacs‐Smith, John R. Williams, L. C. Feldman, P. M. Mooney	2008	51
8	Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate Semiconductor Science and Technology ·Yaqi Wang, Siddharth Alur, Yogesh Sharma, Fei Tong, Resham Thapa, P. Gartland, Tamara Isaacs‐Smith, Claude Ahyi, John R. Williams, Minseo Park, Mark A. Johnson, Tanya Paskova, Edward A. Preble, K. R. Evans	2010	41
9	Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors Applied Physics Letters ·Matthew Marinella, D.K. Schroder, Tamara Isaacs‐Smith, A. C. Ahyi, John R. Williams, Gil Yong Chung, Jiangbin Wan, Mark J. Loboda	2007	33
10	Nitrogen and Hydrogen Induced Trap Passivation at the SiO<sub>2</sub>/4H-SiC Interface Materials science forum ·Sarit Dhar, S.R. Wang, A. C. Ahyi, Tamara Isaacs‐Smith, Sokrates T. Pantelides, John R. Williams, L. C. Feldman	2006	31
11	Chitosan solid electrolyte as electric double layer in multilayer MoS₂ transistor for low‐voltage operation physica status solidi (a) ·Jie Jiang, Marcelo A. Kuroda, A. C. Ahyi, Tamara Isaacs‐Smith, Vahid Mirkhani, Minseo Park, Sarit Dhar	2015	26
12	The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors Solid-State Electronics ·Tianbing Chen, Zhiyun Luo, John D. Cressler, Tamara Isaacs‐Smith, John R. Williams, Gilyong Chung, S.D. Clark	2002	26
13	High-voltage UMOSFETs in 4H SiC I.A. Khan, James A. Cooper, M. A. Capano, Tamara Isaacs‐Smith, John R. Williams	2003	24
14	High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching Materials science forum ·Stephen E. Saddow, John R. Williams, Tamara Isaacs‐Smith, Michael A. Capano, James A. Cooper, Michael S. Mazzola, Alex J. Hsieh, Jeff B. Casady	2000	23
15	Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs) Journal of Applied Physics ·Min P. Khanal, Sunil Uprety, Vahid Mirkhani, Shiqiang Wang, Kosala Yapabandara, Ehsan Hassani, Tamara Isaacs‐Smith, A. C. Ahyi, Michael J. Bozack, Tae-Sik Oh, Minseo Park	2018	22
16	Growth of ZnO Nanorod Arrays on Flexible Substrates: Effect of Precursor Solution Concentration DOAJ (DOAJ: Directory of Open Access Journals) ·Fei Tong, Kyusang Kim, Yaqi Wang, Resham Thapa, Yogesh Sharma, Aaron Modic, A. C. Ahyi, Tamara Isaacs‐Smith, John R. Williams, Hosang Ahn, Hyejin Park, Dong‐Joo Kim, Sungkoo Lee, Eunhee Lim, Kyeong K. Lee, Minseo Park	2012	22
17	Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures Journal of Electronic Materials ·Tom Oder, P. Martin, A. Victor Adedeji, Tamara Isaacs‐Smith, John R. Williams	2007	22
18	Improved ohmic contact to n-type 4H and 6H-SiC using nichrome Journal of Electronic Materials ·E. Luckowski, J. M. DeLucca, John R. Williams, Suzanne E. Mohney, Michael J. Bozack, Tamara Isaacs‐Smith, J. Crofton	1998	20
19	Thermally stable Schottky contacts on n-type GaN using ZrB2 Applied Physics Letters ·Tom Oder, P. Martin, J. Y. Lin, H. X. Jiang, John R. Williams, Tamara Isaacs‐Smith	2006	18
20	Nitrogen passivation of deposited oxides on n 4H–SiC Applied Physics Letters ·Gil Yong Chung, John R. Williams, Tamara Isaacs‐Smith, F. Ren, K. McDonald, L. C. Feldman	2002	18

About Tamara Isaacs‐Smith

Tamara Isaacs‐Smith is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Condensed Matter Physics, having authored 78 papers that have together received 1.1k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (43 papers), Semiconductor materials and devices (41 papers), Semiconductor materials and interfaces (19 papers), Copper Interconnects and Reliability (10 papers), Thin-Film Transistor Technologies (8 papers), ZnO doping and properties (7 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). The work is most often cited by research in Electrical and Electronic Engineering (974 citations), Electronic, Optical and Magnetic Materials (236 citations), Condensed Matter Physics (148 citations), Ceramics and Composites (68 citations) and Atomic and Molecular Physics, and Optics (286 citations). Tamara Isaacs‐Smith has collaborated with scholars based in United States, Japan and China. Frequent co-authors include John R. Williams, Sarit Dhar, L. C. Feldman, A. C. Ahyi, Yogesh Sharma, J. Crofton, Suzanne E. Mohney, Yi Xu, Minseo Park and Michael J. Bozack. Their work appears in journals such as Journal of Electronic Materials, Applied Physics Letters, Journal of Applied Physics, IEEE Electron Device Letters and Journal of Physics Condensed Matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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