J. Crofton

966 citations

27 papers · 833 · h-index 12

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices

Papers in

Electrical and Electronic Engineering 27
- Silicon Carbide Semiconductor Technologies 25
- Semiconductor materials and devices 10
- Advancements in Semiconductor Devices and Circuit Design 4
Atomic and Molecular Physics, and Optics 18
- Semiconductor materials and interfaces 16

Co-authors: John R. Williams (21 shared papers)Michael J. Bozack (11 shared papers)Lisa M. Porter (1 shared paper)Suzanne E. Mohney (8 shared papers)P.G. McMullin (3 shared papers)P. A. Barnes (5 shared papers)S. Sriram (1 shared paper)J. A. Edmond (1 shared paper)
Journals: Journal of Electronic Materials (4 papers)Solid-State Electronics (3 papers)Journal of Applied Physics (2 papers)Applied Physics Letters (1 paper)physica status solidi (b) (1 paper)
Partner nations: United States Netherlands China

In The Last Decade

J. Crofton

26 papers receiving 788 citations

Peers

Countries citing papers authored by J. Crofton

Since Specialization

Citations

This map shows the geographic impact of J. Crofton's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Crofton with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Crofton more than expected).

Fields of papers citing papers by J. Crofton

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Crofton. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Crofton. The network helps show where J. Crofton may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Crofton, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Crofton Line = papers co-authored together J. Crofton links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 27 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	High-temperature ohmic contact to n-type 6H-SiC using nickel Journal of Applied Physics ·J. Crofton, P.G. McMullin, John R. Williams, Michael J. Bozack	1995	164
2	The Physics of Ohmic Contacts to SiC physica status solidi (b) ·J. Crofton, Lisa M. Porter, John R. Williams	1997	163
3	Contact resistance measurements on p-type 6H-SiC Applied Physics Letters ·J. Crofton, P. A. Barnes, John R. Williams, J. A. Edmond	1993	110
4	Titanium and aluminum-titanium ohmic contacts to p-type SiC Solid-State Electronics ·J. Crofton, L.M. Beyer, John R. Williams, E. Luckowski, Suzanne E. Mohney, J. M. DeLucca	1997	79
5	Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC Solid-State Electronics ·J. Crofton, Suzanne E. Mohney, John R. Williams, Tamara Isaacs‐Smith	2002	66
6	Reverse leakage current calculations for SiC Schottky contacts IEEE Transactions on Electron Devices ·J. Crofton, S. Sriram	1996	57
7	Morphological study of the Al–Ti ohmic contact to p-type SiC Solid-State Electronics ·Suzanne E. Mohney, B. A. Hull, J. Y. Lin, J. Crofton	2002	39
8	High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC Journal of Electronic Materials ·Tom Oder, John R. Williams, Michael J. Bozack, Venkatesh Iyer, Suzanne E. Mohney, J. Crofton	1998	21
9	Improved ohmic contact to n-type 4H and 6H-SiC using nichrome Journal of Electronic Materials ·E. Luckowski, J. M. DeLucca, John R. Williams, Suzanne E. Mohney, Michael J. Bozack, Tamara Isaacs‐Smith, J. Crofton	1998	20
10	Metallization Studies on Epitaxial 6H-SiC Springer proceedings in physics ·J. Crofton, J.M. Ferrero, P. A. Barnes, John R. Williams, Michael J. Bozack, C. C. Tin, Charles D. Ellis, J.A. Spitznagel, P.G. McMullin	1992	18
11	Refractory metal boride ohmic contacts to P-type 6H-SiC Journal of Electronic Materials ·Tom Oder, John R. Williams, Suzanne E. Mohney, J. Crofton	1998	17
12	Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC Materials science forum ·Yan Bin Luo, Feng Yan, K. Tone, Jian Hui Zhao, J. Crofton	2000	12
13	Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome MRS Proceedings ·E. Luckowski, John R. Williams, Michael J. Bozack, Tamara Isaacs‐Smith, J. Crofton	1996	11
14	Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts Materials science forum ·A. L. Syrkin, V. Dmitriev, O. V. Kovalenkov, D. A. Bauman, J. Crofton	2002	10
15	A comparison of one, two, and three band calculations of contact resistance for a GaAs ohmic contact using the Wentzel-Kramers-Brillouin approximation and a numerical solution to the Schrodinger equation Journal of Applied Physics ·J. Crofton, P. A. Barnes	1991	8
16	Quantum mechanical tunneling in an ohmic contact American Journal of Physics ·J. Crofton, P. A. Barnes, Michael J. Bozack	1992	7
17	Nickel Ohmic Contacts to N-Implanted (0001) 4H-SiC Journal of Electronic Materials ·M. Li, A. C. Ahyi, X. Zhu, Zengjun Chen, Tamara Isaacs‐Smith, John R. Williams, J. Crofton	2010	7
18	Engineering the Al-Ti/p-SiC Ohmic Contact for Improved Performance MRS Proceedings ·J. Y. Lin, Suzanne E. Mohney, M. Smalley, J. Crofton, John R. Williams, Tamara Isaacs‐Smith	2000	5
19	Low Resistance Ohmic Contacts to n-SiC Using Niobium Materials science forum ·Tom Oder, John R. Williams, K.W. Bryant, Michael J. Bozack, J. Crofton	2000	5
20	High temperature ohmic and Schottky contacts to N-type 6H-SiC nickel AIP conference proceedings ·John R. Williams, Michael J. Bozack, Tamara Isaacs‐Smith, E. Luckowski, Christopher I. S. Meadows, J. Crofton, P.G. McMullin	1995	4

About J. Crofton

J. Crofton is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Mechanical Engineering, Ceramics and Composites and Electronic, Optical and Magnetic Materials, having authored 27 papers that have together received 833 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (25 papers), Semiconductor materials and interfaces (16 papers), Semiconductor materials and devices (10 papers), Aluminum Alloys Composites Properties (7 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers), Advanced ceramic materials synthesis (4 papers), Copper Interconnects and Reliability (3 papers) and Electrical Contact Performance and Analysis (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (504 citations), Electrical and Electronic Engineering (773 citations), Ceramics and Composites (58 citations), Condensed Matter Physics (49 citations) and Electronic, Optical and Magnetic Materials (74 citations). J. Crofton has collaborated with scholars based in United States, Netherlands and China. Frequent co-authors include John R. Williams, Michael J. Bozack, Lisa M. Porter, Suzanne E. Mohney, P.G. McMullin, P. A. Barnes, S. Sriram, J. A. Edmond, Tamara Isaacs‐Smith and E. Luckowski. Their work appears in journals such as Journal of Electronic Materials, Solid-State Electronics, Journal of Applied Physics, Applied Physics Letters and physica status solidi (b).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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