J. Kretchmer

1.6k citations

42 papers · 1.3k · h-index 21

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Thin-Film Transistor Technologies

Papers in

Electrical and Electronic Engineering 38
- Silicon Carbide Semiconductor Technologies 31
- Semiconductor materials and devices 22
- Silicon and Solar Cell Technologies 7
- Electrostatic Discharge in Electronics 5
- Radio Frequency Integrated Circuit Design 4
Condensed Matter Physics 12
- GaN-based semiconductor devices and materials 12

Co-authors: M. Ghezzo (21 shared papers)X. A. Cao (7 shared papers)D.M. Brown (10 shared papers)S. F. LeBoeuf (6 shared papers)E. Downey (7 shared papers)D. Walker (4 shared papers)E. B. Stokes (4 shared papers)Peter M. Sandvik (4 shared papers)
Journals: Solid-State Electronics (8 papers)Journal of Electronic Materials (6 papers)IEEE Electron Device Letters (3 papers)Journal of Applied Physics (3 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: United States India Canada

In The Last Decade

J. Kretchmer

41 papers receiving 1.2k citations

Peers

Countries citing papers authored by J. Kretchmer

Since Specialization

Citations

This map shows the geographic impact of J. Kretchmer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Kretchmer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Kretchmer more than expected).

Fields of papers citing papers by J. Kretchmer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Kretchmer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Kretchmer. The network helps show where J. Kretchmer may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Kretchmer, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Kretchmer Line = papers co-authored together J. Kretchmer links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 42 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes IEEE Electron Device Letters ·X. A. Cao, E. B. Stokes, Peter M. Sandvik, S. F. LeBoeuf, J. Kretchmer, D. Walker	2002	203
2	Silicon carbide UV photodiodes IEEE Transactions on Electron Devices ·D.M. Brown, E. Downey, M. Ghezzo, J. Kretchmer, R. Saia, Y.S. Liu, J. A. Edmond, G. Gati, Joseph M. Pimbley, W. Schneider	1993	136
3	A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications IEEE Transactions on Industry Applications ·Ahmed Elasser, M.H. Kheraluwala, M. Ghezzo, R.L. Steigerwald, N. Evers, J. Kretchmer, T. Paul Chow	2003	109
4	Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates Applied Physics Letters ·X. A. Cao, S. F. LeBoeuf, Mark P. D’Evelyn, S. D. Arthur, J. Kretchmer, Chunhui Yan, Zhicheng Yang	2004	85
5	Silicon carbide MOSFET technology Solid-State Electronics ·D.M. Brown, E. Downey, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, W. Hennessy, G. J. Michon	1996	65
6	Nitrogen-implanted SiC diodes using high-temperature implantation IEEE Electron Device Letters ·M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D.L. Polla, H. Bakhru	1992	61
7	SiC MOS interface characteristics IEEE Transactions on Electron Devices ·D.M. Brown, M. Ghezzo, J. Kretchmer, E. Downey, Joseph M. Pimbley, John W. Palmour	1994	53
8	Phosphorus and boron implantation in 6H–SiC Journal of Applied Physics ·Mulpuri V. Rao, Jason A. Gardner, P. H., O. W. Holland, G. Kelner, J. Kretchmer, M. Ghezzo	1997	47
9	Characterization of phosphorus implantation in 4H-SiC Journal of Electronic Materials ·V. Khemka, R. N. Patel, N. Ramungul, T. Paul Chow, M. Ghezzo, J. Kretchmer	1999	42
10	Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes Solid-State Electronics ·X. A. Cao, E. B. Stokes, Peter Sandvik, N. R. Taskar, J. Kretchmer, D. Walker	2002	35
11	Microwave power SiC MESFETs and GaN HEMTs Solid-State Electronics ·A.P. Zhang, L.B. Rowland, E.B. Kaminsky, J. Kretchmer, Richard Beaupre, J. L. Garrett, Jesse B. Tucker, B.J. Edward, J. Foppes, A.F. Allen	2003	35
12	Material and n-p junction properties of N-, P-, and N/P-implanted SiC Journal of Applied Physics ·Jason A. Gardner, Andrew Edwards, Mulpuri V. Rao, N. A. Papanicolaou, G. Kelner, O. W. Holland, M. A. Capano, M. Ghezzo, J. Kretchmer	1998	35
13	Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers IEEE Electron Device Letters ·J.B. Fedison, N. Ramungul, T. Paul Chow, M. Ghezzo, J. Kretchmer	2001	34
14	"Insulated gate bipolar transistor (IGBT) with a trench gate structure " H.-R. Chang, B. Jayant Baliga, J. Kretchmer, P. A. Piacente	1987	33
15	Al, Al/C and Al/Si implantations in 6H-SiC Journal of Electronic Materials ·Mulpuri V. Rao, Peter R. Griffiths, Jason A. Gardner, O. W. Holland, M. Ghezzo, J. Kretchmer, G. Kelner, Jaime A. Freitas	1996	33
16	Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes Solid-State Electronics ·X. A. Cao, S. F. LeBoeuf, K.H Kim, Peter M. Sandvik, E. B. Stokes, Abasifreke Ebong, D. Walker, J. Kretchmer, J. Y. Lin, H. X. Jiang	2002	32
17	Nitrogen and aluminum implantation in high resistivity silicon carbide Journal of Applied Physics ·Deborah N. Dwight, Mulpuri V. Rao, O. W. Holland, G. Kelner, P. H., J. Kretchmer, M. Ghezzo	1997	31
18	SiC flame sensors for gas turbine control systems Solid-State Electronics ·D.M. Brown, E. Downey, J. Kretchmer, G. J. Michon, Emily Y. Shu, D.N. Schneider	1998	27
19	Silicon Carbide MOSFET Integrated Circuit Technology physica status solidi (a) ·D.M. Brown, E. Downey, M. Ghezzo, J. Kretchmer, V. Krishnamurthy, W. Hennessy, G. J. Michon	1997	25
20	9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias Electronics Letters ·A.P. Zhang, L.B. Rowland, E.B. Kaminsky, Jesse B. Tucker, J. Kretchmer, A.F. Allen, J. W. Cook, B.J. Edward	2003	24

About J. Kretchmer

J. Kretchmer is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 42 papers that have together received 1.3k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (31 papers), Semiconductor materials and devices (22 papers), GaN-based semiconductor devices and materials (12 papers), Silicon and Solar Cell Technologies (7 papers), Semiconductor Quantum Structures and Devices (5 papers), Ga2O3 and related materials (5 papers), Electrostatic Discharge in Electronics (5 papers) and Radio Frequency Integrated Circuit Design (4 papers). The work is most often cited by research in Condensed Matter Physics (449 citations), Electrical and Electronic Engineering (1.0k citations), Electronic, Optical and Magnetic Materials (217 citations), Atomic and Molecular Physics, and Optics (354 citations) and Ceramics and Composites (57 citations). J. Kretchmer has collaborated with scholars based in United States, India and Canada. Frequent co-authors include M. Ghezzo, X. A. Cao, D.M. Brown, S. F. LeBoeuf, E. Downey, D. Walker, E. B. Stokes, Peter M. Sandvik, T. Paul Chow and O. W. Holland. Their work appears in journals such as Solid-State Electronics, Journal of Electronic Materials, IEEE Electron Device Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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