E. Luckowski

588 citations

23 papers · 324 · h-index 9

Impact in

Electrical and Electronic Engineering
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 23
- Silicon Carbide Semiconductor Technologies 12
- Semiconductor materials and devices 12
- Advancements in Semiconductor Devices and Circuit Design 7
- Integrated Circuits and Semiconductor Failure Analysis 6
- Advancements in Photolithography Techniques 4
- Ferroelectric and Negative Capacitance Devices 2
Atomic and Molecular Physics, and Optics 5
- Semiconductor materials and interfaces 5

Co-authors: John R. Williams (9 shared papers)J. Crofton (7 shared papers)Suzanne E. Mohney (3 shared papers)J. M. DeLucca (2 shared papers)Dale Ganser (2 shared papers)Karen Moore (3 shared papers)B. J. Skromme (2 shared papers)M. Bhatnagar (1 shared paper)
Journals: Journal of Electronic Materials (2 papers)Solid-State Electronics (1 paper)Microelectronic Engineering (1 paper)Journal of The Electrochemical Society (1 paper)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (1 paper)
Partner nations: United States Sweden

In The Last Decade

E. Luckowski

20 papers receiving 308 citations

Peers

Countries citing papers authored by E. Luckowski

Since Specialization

Citations

This map shows the geographic impact of E. Luckowski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Luckowski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Luckowski more than expected).

Fields of papers citing papers by E. Luckowski

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Luckowski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Luckowski. The network helps show where E. Luckowski may publish in the future.

Co-authors

The 25 scholars most cited alongside E. Luckowski, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Luckowski Line = papers co-authored together E. Luckowski links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 23 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity Journal of Electronic Materials ·B. J. Skromme, E. Luckowski, Karen Moore, M. Bhatnagar, C.E. Weitzel, T. Gehoski, Dale Ganser	2000	88
2	Titanium and aluminum-titanium ohmic contacts to p-type SiC Solid-State Electronics ·J. Crofton, L.M. Beyer, John R. Williams, E. Luckowski, Suzanne E. Mohney, J. M. DeLucca	1997	73
3	Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching System Journal of The Electrochemical Society ·Jeff B. Casady, E. Luckowski, Michael J. Bozack, David C. Sheridan, Wayne Johnson, John R. Williams	1996	39
4	Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack H.‐H. Tseng, C. Capasso, J. Schaeffer, E.A. Hebert, Philip J. Tobin, D. C. Gilmer, Dina H. Triyoso, Michael Ramon, S. Kalpat, E. Luckowski, W. Taylor, Y. Jeon, O. Adetutu, R. I. Hegde, R. Noble, M. Jahanbani, Chadi El Chemali, B. E. White	2005	29
5	Improved ohmic contact to n-type 4H and 6H-SiC using nichrome Journal of Electronic Materials ·E. Luckowski, J. M. DeLucca, John R. Williams, Suzanne E. Mohney, Michael J. Bozack, Tamara Isaacs‐Smith, J. Crofton	1998	20
6	Oxygen vacancy defects in tantalum pentoxide: a density functional study Microelectronic Engineering ·Rampi Ramprasad, M. Sadd, Doug Roberts, Tom Remmel, Mark Raymond, E. Luckowski, S. Kalpat, Carole Barron, Mel Miller	2003	14
7	Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome MRS Proceedings ·E. Luckowski, John R. Williams, Michael J. Bozack, Tamara Isaacs‐Smith, J. Crofton	1996	10
8	Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC Materials science forum ·B. J. Skromme, E. Luckowski, Karen Moore, Stephen Clemens, D. J. Resnick, T. Gehoski, Dale Ganser	2000	10
9	Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors T. Remmell, Rampi Ramprasad, David A. Roberts, M. Raymond, Manfred Martin, D. Qualls, E. Luckowski, S J Braithwaite, M. Miller, James Walls	2004	8
10	Materials Challenges for CMOS Junctions MRS Proceedings ·William J. Taylor, Michael J. Rendon, E. Verret, Jack Jiang, C. Capasso, D. Sing, Jen-Yee Nguyen, James A. Smith, E. Luckowski, Arturo Martínez, J. Schaeffer, P.J. Tobin	2004	5
11	Integration of UTR processes into MPU IC manufacturing flows Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Jonathan Cobb, S. Dakshina-Murthy, Colita Parker, E. Luckowski, Arturo M. Martinez, Richard D. Peters, Wei Wu, Scott D. Hector	2002	5
12	Investigations of Metal Gate Electrodes on HfO₂ Gate Dielectrics MRS Proceedings ·J. Schaeffer, S. Samavedam, L. R. C. Fonseca, C. Capasso, O. Adetutu, D. C. Gilmer, Chris Hobbs, E. Luckowski, R. Gregory, Zhi-Xiong Jiang, Yong Liang, Karen Moore, Darrell Roan, Bich-Yen Nguyen, P.J. Tobin, Bruce White	2004	4
13	High temperature ohmic and Schottky contacts to N-type 6H-SiC nickel AIP conference proceedings ·John R. Williams, Michael J. Bozack, Tamara Isaacs‐Smith, E. Luckowski, Christopher I. S. Meadows, J. Crofton, P.G. McMullin	1995	4
14	High Electric Field Breakdown of 4H-SiC PN Junction Diodes MRS Proceedings ·C. C. Tin, V. Madangarli, R. Hu, E. Luckowski, Jeff B. Casady, Tamara Isaacs‐Smith, G. Gradinaru, T. S. Sudarshan, Wayne Johnson	1996	3
15	Single-layer and bilayer resist processes for EUV-type integrations Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Richard D. Peters, Colita Parker, Jonathan Cobb, E. Luckowski, Eric Weisbrod, Bill Dauksher	2004	2
16	Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodes C. C. Tin, V. Madangarli, E. Luckowski, Jeff B. Casady, Tamara Isaacs‐Smith, John R. Williams, Wayne Johnson, G. Gradinaru, T. S. Sudarshan	2002	2
17	Fabrication procedures and characterization of 6H-SiC MESFETs for use in high temperature electronics Jeff B. Casady, E. Luckowski, Wayne Johnson, J. Crofton, John R. Williams	2002	2
18	Fabrication of integrated circuits with high yield using ultra-thin resist processes Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Richard D. Peters, Sergei V. Postnikov, Jonathan Cobb, S. Dakshina-Murthy, T. Stephens, Colita Parker, E. Luckowski, Arturo M. Martinez, Wei Wu, Scott D. Hector	2003	2
19	Tantalum carbide etch characterization in inductively coupled Ar∕Cl2∕HBr plasmas Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·H. Kawai, Shahid Rauf, E. Luckowski, Peter L. G. Ventzek	2006	1
20	Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability R. I. Hegde, Dina H. Triyoso, S. Kalpat, S. Samavedam, J. K. Schaeffer, E. Luckowski, C. Capasso, D. C. Gilmer, M. Raymond, D. Roan, Johan Nguyen, L.B. La, E.A. Hebert, Xiaodong Wang, R. Gregory, (unknown), Ji Jiang, T. Y. Luo, B. E. White	2007	1

About E. Luckowski

E. Luckowski is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics and Mechanics of Materials, having authored 23 papers that have together received 324 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (12 papers), Semiconductor materials and devices (12 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Semiconductor materials and interfaces (5 papers), Advancements in Photolithography Techniques (4 papers), Copper Interconnects and Reliability (3 papers) and Ferroelectric and Negative Capacitance Devices (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (309 citations), Atomic and Molecular Physics, and Optics (164 citations), Ceramics and Composites (10 citations), Electronic, Optical and Magnetic Materials (31 citations) and Condensed Matter Physics (17 citations). E. Luckowski has collaborated with scholars based in United States and Sweden. Frequent co-authors include John R. Williams, J. Crofton, Suzanne E. Mohney, J. M. DeLucca, Dale Ganser, Karen Moore, B. J. Skromme, M. Bhatnagar, C.E. Weitzel and Michael J. Bozack. Their work appears in journals such as Journal of Electronic Materials, Solid-State Electronics, Microelectronic Engineering, Journal of The Electrochemical Society and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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