Sarit Dhar

4.0k citations

119 papers · 3.3k · h-index 33

Impact in

Ceramics and Composites top 2%
- Advanced ceramic materials synthesis
Electrical and Electronic Engineering top 1%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Electrical and Electronic Engineering 109
- Silicon Carbide Semiconductor Technologies 95
- Semiconductor materials and devices 95
- Advancements in Semiconductor Devices and Circuit Design 22
- Thin-Film Transistor Technologies 11
Electronic, Optical and Magnetic Materials 33
- Copper Interconnects and Reliability 23
- Ga2O3 and related materials 10

Co-authors: L. C. Feldman (47 shared papers)John R. Williams (33 shared papers)A. C. Ahyi (29 shared papers)Gang Liu (9 shared papers)Blair Tuttle (3 shared papers)Sokrates T. Pantelides (16 shared papers)Asanka Jayawardena (9 shared papers)Anant Agarwal (18 shared papers)
Journals: Journal of Applied Physics (19 papers)Applied Physics Letters (13 papers)IEEE Electron Device Letters (5 papers)Semiconductor Science and Technology (5 papers)Journal of Electronic Materials (4 papers)
Partner nations: United States China Canada

In The Last Decade

Sarit Dhar

115 papers receiving 3.2k citations

Peers

Countries citing papers authored by Sarit Dhar

Since Specialization

Citations

This map shows the geographic impact of Sarit Dhar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Sarit Dhar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Sarit Dhar more than expected).

Fields of papers citing papers by Sarit Dhar

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Sarit Dhar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Sarit Dhar. The network helps show where Sarit Dhar may publish in the future.

Co-authors

The 25 scholars most cited alongside Sarit Dhar, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Sarit Dhar Line = papers co-authored together Sarit Dhar links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 119 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Silicon carbide: A unique platform for metal-oxide-semiconductor physics Applied Physics Reviews ·Gang Liu, Blair Tuttle, Sarit Dhar	2015	245
2	Modified Deal Grove model for the thermal oxidation of silicon carbide Journal of Applied Physics ·Yongwook Song, Sarit Dhar, L. C. Feldman, Gil Yong Chung, John R. Williams	2004	216
3	Bonding at theSiC−SiO2Interface and the Effects of Nitrogen and Hydrogen Physical Review Letters ·Sanwu Wang, Sarit Dhar, Shu-rui Wang, A. C. Ahyi, Alberto Franceschetti, John R. Williams, L. C. Feldman, Sokrates T. Pantelides	2007	159
4	Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes Journal of Applied Physics ·Andrew Armstrong, Mary H. Crawford, Asanka Jayawardena, A. C. Ahyi, Sarit Dhar	2016	157
5	Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC Journal of Applied Physics ·John Rozen, Sarit Dhar, M. E. Zvanut, John R. Williams, L. C. Feldman	2009	151
6	Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid Journal of the American Chemical Society ·Sarit Dhar, Oliver Seitz, Mathew D. Halls, Sungho Choi, Yves J. Chabal, L. C. Feldman	2009	105
7	Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors Journal of Applied Physics ·Sarit Dhar, Sarah K. Haney, Lin Cheng, Seong-Wook Ryu, Anant Agarwal, Liang Chun Yu, Kin P. Cheung	2010	100
8	Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation IEEE Electron Device Letters ·Gang Liu, A. C. Ahyi, Yi Xu, Tamara Isaacs‐Smith, Yogesh Sharma, John Williams, L. C. Feldman, Sarit Dhar	2013	95
9	Delivery of lethal dsRNAs in insect diets by branched amphiphilic peptide capsules Journal of Controlled Release ·L. Adriana Avila, Raman Chandrasekar, K.E. Wilkinson, James Balthazor, Matthew C. Heerman, J. Bechard, Susan J. Brown, Y. Park, Sarit Dhar, Gerald R. Reeck, John M. Tomich	2018	82
10	Interface Passivation for Silicon Dioxide Layers on Silicon Carbide MRS Bulletin ·Sarit Dhar, Shurui Wang, John R. Williams, Sokrates T. Pantelides, L. C. Feldman	2005	67
11	High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers Applied Physics Letters ·Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Anant Agarwal, John W. Palmour	2014	67
12	Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC Journal of Applied Physics ·Sarit Dhar, L. C. Feldman, Sicong Wang, Tamara Isaacs‐Smith, John R. Williams	2005	66
13	Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface Journal of Applied Physics ·John Rozen, Sarit Dhar, S. K. Dixit, V. V. Afanas’ev, F. O. Roberts, H.L. Dang, Sanwu Wang, Sokrates T. Pantelides, John R. Williams, L. C. Feldman	2008	65
14	High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer IEEE Electron Device Letters ·Yogesh Sharma, A. C. Ahyi, Tamara Isaacs‐Smith, Aaron Modic, M. Park, Yi Xu, Eric Garfunkel, Sarit Dhar, L. C. Feldman, John R. Williams	2013	65
15	Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(1120) 4H–SiC interface Applied Physics Letters ·Sarit Dhar, YONG-WON SONG, L. C. Feldman, Tamara Isaacs‐Smith, C. C. Tin, John R. Williams, Gil Yong Chung, Tomoaki Nishimura, D. Starodub, T. Gustafsson, Eric Garfunkel	2004	63
16	Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$β-Ga₂O₃Schottky diodes Semiconductor Science and Technology ·Asanka Jayawardena, A. C. Ahyi, Sarit Dhar	2016	60
17	Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics Applied Physics Letters ·Asanka Jayawardena, Rahul P. Ramamurthy, A. C. Ahyi, Dallas Morisette, Sarit Dhar	2018	56
18	High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping IEEE Electron Device Letters ·Aaron Modic, Gang Liu, A. C. Ahyi, Yuming Zhou, Pingye Xu, Michael C. Hamilton, John R. Williams, L. C. Feldman, Sarit Dhar	2014	54
19	Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC Journal of Applied Physics ·X. D. Chen, Sarit Dhar, Tamara Isaacs‐Smith, John R. Williams, L. C. Feldman, P. M. Mooney	2008	51
20	Pressure dependence of SiO2 growth kinetics and electrical properties on SiC Journal of Applied Physics ·Emily A. Ray, John Rozen, Sarit Dhar, L. C. Feldman, John R. Williams	2008	46

About Sarit Dhar

Sarit Dhar is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, Atomic and Molecular Physics, and Optics and Ceramics and Composites, having authored 119 papers that have together received 3.3k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (95 papers), Semiconductor materials and devices (95 papers), Copper Interconnects and Reliability (23 papers), Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and interfaces (15 papers), ZnO doping and properties (12 papers), Thin-Film Transistor Technologies (11 papers) and Ga2O3 and related materials (10 papers). The work is most often cited by research in Ceramics and Composites (297 citations), Electrical and Electronic Engineering (2.7k citations), Electronic, Optical and Magnetic Materials (833 citations), Materials Chemistry (696 citations) and Atomic and Molecular Physics, and Optics (395 citations). Sarit Dhar has collaborated with scholars based in United States, China and Canada. Frequent co-authors include L. C. Feldman, John R. Williams, A. C. Ahyi, Gang Liu, Blair Tuttle, Sokrates T. Pantelides, Asanka Jayawardena, Anant Agarwal, Sei‐Hyung Ryu and Tamara Isaacs‐Smith. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, IEEE Electron Device Letters, Semiconductor Science and Technology and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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