P.C. Chao

3.4k citations

136 papers · 2.5k · h-index 28

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices

Papers in

Electrical and Electronic Engineering 133
- Radio Frequency Integrated Circuit Design 77
- Semiconductor materials and devices 62
- Advancements in Semiconductor Devices and Circuit Design 32
- Semiconductor Lasers and Optical Devices 14
- Advanced Power Amplifier Design 10
- Microwave Engineering and Waveguides 10
Atomic and Molecular Physics, and Optics 84
- Semiconductor Quantum Structures and Devices 76

Co-authors: P.M. Smith (71 shared papers)K.H.G. Duh (59 shared papers)J. M. Ballingall (38 shared papers)P. Ho (31 shared papers)Ming-Yih Kao (26 shared papers)A.A. Jabra (16 shared papers)L. F. Lester (19 shared papers)J.J. Komiak (12 shared papers)
Journals: IEEE Electron Device Letters (25 papers)IEEE Transactions on Electron Devices (15 papers)Electronics Letters (10 papers)Journal of Heat Transfer (1 paper)Applied Catalysis B: Environmental (1 paper)
Partner nations: United States Sweden Israel

In The Last Decade

P.C. Chao

133 papers receiving 2.3k citations

Peers

Countries citing papers authored by P.C. Chao

Since Specialization

Citations

This map shows the geographic impact of P.C. Chao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.C. Chao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.C. Chao more than expected).

Fields of papers citing papers by P.C. Chao

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.C. Chao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.C. Chao. The network helps show where P.C. Chao may publish in the future.

Co-authors

The 25 scholars most cited alongside P.C. Chao, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P.C. Chao Line = papers co-authored together P.C. Chao links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 136 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	W-band low-noise InAlAs/InGaAs lattice-matched HEMTs IEEE Electron Device Letters ·P.C. Chao, A.J. Tessmer, K.H.G. Duh, P. Ho, Ming-Yih Kao, P.M. Smith, J. M. Ballingall, S.-M.J. Liu, A.A. Jabra	1990	153
2	W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/ IEEE Microwave and Guided Wave Letters ·P.M. Smith, Shikuan Liu, Ming-Yih Kao, P. Ho, S.C. Wang, K.H.G. Duh, S.T. Fu, P.C. Chao	1995	128
3	A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT IEEE Microwave and Guided Wave Letters ·K.H.G. Duh, P.C. Chao, S.M.J. Liu, P. Ho, Ming-Yih Kao, J. M. Ballingall	1991	113
4	DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs IEEE Transactions on Electron Devices ·P.C. Chao, M. S. Shur, R. C. Tiberio, K.H.G. Duh, P.M. Smith, J. M. Ballingall, P. Ho, A.A. Jabra	1989	103
5	Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor IEEE Electron Device Letters ·T. Henderson, M.I. Aksun, C. K. Peng, H. Morkoç̌, P.C. Chao, P.M. Smith, K.H.G. Duh, L. F. Lester	1986	90
6	Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs Electronics Letters ·P. Ho, Ming-Yih Kao, P.C. Chao, K.H.G. Duh, J. M. Ballingall, Scott T. Allen, A.J. Tessmer, P.M. Smith	1991	82
7	9.4-W/mm Power Density AlGaN–GaN HEMTs on Free-Standing GaN Substrates IEEE Electron Device Letters ·K. Chu, P.C. Chao, M.T. Pizzella, R. Actis, D. E. Meharry, K. B. Nichols, R. P. Vaudo, Xin Xu, J.S. Flynn, Joe Dion, G. R. Brandes	2004	71
8	Ultra-low-noise cryogenic high-electron-mobility transistors IEEE Transactions on Electron Devices ·K.H.G. Duh, M.W. Pospieszalski, W. Kopp, P. Ho, A.A. Jabra, P.C. Chao, P.M. Smith, L. F. Lester, J. M. Ballingall, S. Weinreb	1988	66
9	HEMT degradation in hydrogen gas IEEE Electron Device Letters ·P.C. Chao, Ming-Yih Kao, Karen J. Nordheden, A.W. Swanson	1994	59
10	Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs IEEE Electron Device Letters ·Ming-Yih Kao, P.M. Smith, P. Ho, P.C. Chao, K.H.G. Duh, A.A. Jabra, J. M. Ballingall	1989	55
11	W-band InGaAs HEMT low noise amplifiers K.H.G. Duh, P.C. Chao, P. Ho, A.J. Tessmer, S.M.J. Liu, Ming-Yih Kao, P.M. Smith, J. M. Ballingall	1990	55
12	Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and no FP technology 2011 IEEE MTT-S International Microwave Symposium ·J.J. Komiak, K. Chu, P.C. Chao	2011	53
13	Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique IEEE Transactions on Electron Devices ·P.C. Chao, P.M. Smith, S. C. Palmateer, James C. M. Hwang	1985	47
14	Advances in HEMT Technology and Applications P.M. Smith, P.C. Chao, K.H.G. Dub, L. F. Lester, B.R. Lee, J. M. Ballingall	1987	46
15	Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's IEEE Electron Device Letters ·K. C. Hwang, P.C. Chao, Carl Creamer, K. B. Nichols, S. Wang, D.-W. Tu, W. Kong, D. Dugas, G.L. Patton	1999	45
16	Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and No FP technology 2011 IEEE MTT-S International Microwave Symposium ·J.J. Komiak, Kanin Chu, P.C. Chao	2011	44
17	On-state breakdown in power HEMTs: measurements and modeling IEEE Transactions on Electron Devices ·Mark Somerville, R.R. Blanchard, Jesús A. del Alamo, K.G. Duh, P.C. Chao	1999	42
18	Millimeter-wave low-noise high electron mobility transistors IEEE Electron Device Letters ·P.C. Chao, S. C. Palmateer, P.M. Smith, Umesh K. Mishra, K.H.G. Duh, James C. M. Hwang	1985	39
19	Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates Applied Physics Letters ·M.I. Aksun, H. Morkoç̌, L. F. Lester, K.H.G. Duh, P.M. Smith, P.C. Chao, M. Longerbone, L. P. Erickson	1986	38
20	Analytical HFET $I$– $V$ Model in Presence of Current Collapse IEEE Transactions on Electron Devices ·A. Koudymov, M. S. Shur, G. Simin, Kanin Chu, P.C. Chao, Cathy Lee, José Luis González, Anthony Balistreri	2008	35

About P.C. Chao

P.C. Chao is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry and Biomedical Engineering, having authored 136 papers that have together received 2.5k indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (77 papers), Semiconductor Quantum Structures and Devices (76 papers), Semiconductor materials and devices (62 papers), GaN-based semiconductor devices and materials (48 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers), Semiconductor Lasers and Optical Devices (14 papers), Advanced Power Amplifier Design (10 papers) and Microwave Engineering and Waveguides (10 papers). The work is most often cited by research in Condensed Matter Physics (724 citations), Atomic and Molecular Physics, and Optics (1.4k citations), Electrical and Electronic Engineering (2.3k citations), Electronic, Optical and Magnetic Materials (124 citations) and Astronomy and Astrophysics (104 citations). P.C. Chao has collaborated with scholars based in United States, Sweden and Israel. Frequent co-authors include P.M. Smith, K.H.G. Duh, J. M. Ballingall, P. Ho, Ming-Yih Kao, A.A. Jabra, L. F. Lester, J.J. Komiak, A.J. Tessmer and James C. M. Hwang. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Electronics Letters, Journal of Heat Transfer and Applied Catalysis B: Environmental.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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