W. Kopp

2.9k citations

94 papers · 2.4k · h-index 28

Impact in

Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Semiconductor materials and interfaces
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Semiconductor Lasers and Optical Devices

Papers in

Electrical and Electronic Engineering 85
- Semiconductor materials and devices 59
- Advancements in Semiconductor Devices and Circuit Design 42
- Radio Frequency Integrated Circuit Design 22
- Semiconductor Lasers and Optical Devices 6
Atomic and Molecular Physics, and Optics 73
- Semiconductor Quantum Structures and Devices 65
- Semiconductor materials and interfaces 11
- Quantum and electron transport phenomena 8

Co-authors: H. Morkoç̌ (68 shared papers)R. Fischer (41 shared papers)T. J. Drummond (33 shared papers)John F. Klem (19 shared papers)T. Henderson (23 shared papers)W. T. Masselink (14 shared papers)R. E. Thorne (14 shared papers)Paul D. Coleman (3 shared papers)
Journals: Applied Physics Letters (18 papers)IEEE Transactions on Electron Devices (17 papers)IEEE Electron Device Letters (15 papers)Electronics Letters (11 papers)Journal of Applied Physics (8 papers)
Partner nations: United States Canada

In The Last Decade

W. Kopp

93 papers receiving 2.2k citations

Peers

Countries citing papers authored by W. Kopp

Since Specialization

Citations

This map shows the geographic impact of W. Kopp's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Kopp with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Kopp more than expected).

Fields of papers citing papers by W. Kopp

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Kopp. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Kopp. The network helps show where W. Kopp may publish in the future.

Co-authors

The 25 scholars most cited alongside W. Kopp, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W. Kopp Line = papers co-authored together W. Kopp links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 94 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperature Applied Physics Letters ·T. J. Shewchuk, Peter Chapin, Paul D. Coleman, W. Kopp, R. Fischer, H. Morkoç̌	1985	169
2	Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors IEEE Transactions on Electron Devices ·A. Ketterson, W. T. Masselink, J.S. Gedymin, John F. Klem, Chin-Kun Peng, W. Kopp, H. Morkoç̌, K.R. Gleason	1986	121
3	GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy Applied Physics Letters ·R. Fischer, Navin Chand, W. Kopp, H. Morkoç̌, L. P. Erickson, R. Youngman	1985	104
4	Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures Journal of Applied Physics ·R. Fischer, John F. Klem, T. J. Drummond, R. E. Thorne, W. Kopp, H. Morkoç̌, A. Y. Cho	1983	93
5	On the collapse of drain I-V characteristics in modulation-doped FET's at cryogenic temperatures IEEE Transactions on Electron Devices ·R. Fischer, T. J. Drummond, John F. Klem, W. Kopp, T. Henderson, D. Perrachione, H. Morkoç̌	1984	91
6	High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors IEEE Electron Device Letters ·A. Ketterson, Michael J. Moloney, W. T. Masselink, C. K. Peng, J. F. Klem, R. Fischer, W. Kopp, H. Morkoç̌	1985	87
7	Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon Electronics Letters ·R. Fischer, T. Henderson, John F. Klem, W. T. Masselink, W. Kopp, H. Morkoç, C. W. Litton	1984	77
8	A small-signal equivalent-circuit model for GaAs-AlxGa1−xAs resonant tunneling heterostructures at microwave frequencies Journal of Applied Physics ·J. Gering, D. A. Crim, D. G. Morgan, Paul D. Coleman, W. Kopp, H. Morkoç̌	1987	76
9	Ultra-low-noise cryogenic high-electron-mobility transistors IEEE Transactions on Electron Devices ·K.H.G. Duh, M.W. Pospieszalski, W. Kopp, P. Ho, A.A. Jabra, P.C. Chao, P.M. Smith, L. F. Lester, J. M. Ballingall, S. Weinreb	1988	71
10	Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam Epitaxy Journal of The Electrochemical Society ·H. Morkoç̌, T. J. Drummond, W. Kopp, R. Fischer	1982	69
11	Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K IEEE Transactions on Electron Devices ·T. J. Drummond, R. Fischer, W. Kopp, H. Morkoç̌, Kwyro Lee, M. S. Shur	1983	68
12	Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si Applied Physics Letters ·R. Fischer, W. Kopp, H. Morkoç̌, M. Pion, A. P. Specht, G. H. Burkhart, H. Appelman, D. McGougan, R. Rice	1986	65
13	Photoconductivity effects in extremely high mobility modulation-doped (Al,Ga)As/GaAs heterostructures Journal of Applied Physics ·T. J. Drummond, W. Kopp, R. Fischer, H. Morkoç̌, R. E. Thorne, A. Y. Cho	1982	58
14	A dc and microwave comparison of GaAs MESFET's on GaAs and Si substrates IEEE Transactions on Electron Devices ·R. Fischer, Navin Chand, W. Kopp, Chin-Kun Peng, H. Morkoç̌, K.R. Gleason, D. Scheitlin	1986	55
15	Electron mobility in single and multiple period modulation-doped (Al,Ga)As/GaAs heterostructures Journal of Applied Physics ·T. J. Drummond, W. Kopp, M. Keever, H. Morkoç̌, A. Y. Cho	1982	50
16	Transport in modulation-doped structures (AlxGa1−xAs/GaAs) and correlations with Monte Carlo calculations (GaAs) Applied Physics Letters ·T. J. Drummond, W. Kopp, H. Morkoç̌, M. Keever	1982	49
17	Field dependence of mobility in Al _0.2 Ga _0.8 As/GaAs heterojunctions at very low fields Electronics Letters ·T. J. Drummond, M. Keever, W. Kopp, H. Morkoç̌, K. Hess, B. G. Streetman, A.Y. Cho	1981	46
18	Monolithic integration of GaAs/AlGaAs modulation-doped field-effect transistors and N-metal-oxide-semiconductor silicon circuits Applied Physics Letters ·R. Fischer, T. Henderson, John F. Klem, W. Kopp, C. K. Peng, H. Morkoç̌, J. Detry, S. Blackstone	1985	41
19	Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K Electronics Letters ·R. Fischer, T. J. Drummond, W. Kopp, H. Morkoç, K. Lee, M. S. Shur	1983	38
20	Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10^-2to 10⁸Hz IEEE Transactions on Electron Devices ·S.-M.J. Liu, M.B. Das, Chin-Kun Peng, John F. Klem, T. Henderson, W. Kopp, H. Morkoç̌	1986	36

About W. Kopp

W. Kopp is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Biomedical Engineering and Materials Chemistry, having authored 94 papers that have together received 2.4k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (65 papers), Semiconductor materials and devices (59 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), Radio Frequency Integrated Circuit Design (22 papers), GaN-based semiconductor devices and materials (18 papers), Semiconductor materials and interfaces (11 papers), Quantum and electron transport phenomena (8 papers) and Semiconductor Lasers and Optical Devices (6 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.9k citations), Electrical and Electronic Engineering (2.1k citations), Condensed Matter Physics (338 citations), Surfaces, Coatings and Films (58 citations) and Materials Chemistry (240 citations). W. Kopp has collaborated with scholars based in United States and Canada. Frequent co-authors include H. Morkoç̌, R. Fischer, T. J. Drummond, John F. Klem, T. Henderson, W. T. Masselink, R. E. Thorne, Paul D. Coleman, M. Keever and A. Ketterson. Their work appears in journals such as Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Electronics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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