P.M. Smith

2.8k citations

101 papers · 2k · h-index 22

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 2%
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Advanced Power Amplifier Design
- Semiconductor materials and devices

Papers in

Condensed Matter Physics 38
- GaN-based semiconductor devices and materials 38
Electrical and Electronic Engineering 97
- Radio Frequency Integrated Circuit Design 73
- Advancements in Semiconductor Devices and Circuit Design 42
- Advanced Power Amplifier Design 25
- Microwave Engineering and Waveguides 6
- Semiconductor materials and devices 5

Co-authors: Pane Chane Chao (76 shared papers)K.H.G. Duh (57 shared papers)J. M. Ballingall (37 shared papers)P. Ho (28 shared papers)Ming-Yih Kao (21 shared papers)Amani A. Jabra (17 shared papers)L. F. Lester (20 shared papers)Susan C. Palmateer (11 shared papers)
Journals: IEEE Electron Device Letters (15 papers)IEEE Transactions on Electron Devices (11 papers)Electronics Letters (10 papers)IEEE Transactions on Microwave Theory and Techniques (3 papers)Applied Physics Letters (3 papers)
Partner nations: United States France

In The Last Decade

P.M. Smith

99 papers receiving 1.8k citations

Peers

Countries citing papers authored by P.M. Smith

Since Specialization

Citations

This map shows the geographic impact of P.M. Smith's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.M. Smith with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.M. Smith more than expected).

Fields of papers citing papers by P.M. Smith

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.M. Smith. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.M. Smith. The network helps show where P.M. Smith may publish in the future.

Co-authors

The 25 scholars most cited alongside P.M. Smith, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P.M. Smith Line = papers co-authored together P.M. Smith links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 101 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	W-band low-noise InAlAs/InGaAs lattice-matched HEMTs IEEE Electron Device Letters ·Pane Chane Chao, A.J. Tessmer, K.H.G. Duh, P. Ho, Ming-Yih Kao, P.M. Smith, J. M. Ballingall, S.M.J. Liu	1990	161
2	W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/ IEEE Microwave and Guided Wave Letters ·P.M. Smith, Ming-Yih Kao, P. Ho, S.C. Wang, K.H.G. Duh, S.T. Fu, Pane Chane Chao +1 other	1995	139
3	DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs IEEE Transactions on Electron Devices ·Pane Chane Chao, Michael Shur, Richard C. Tiberio, K.H.G. Duh, P.M. Smith, J. M. Ballingall, P. Ho, Amani A. Jabra	1989	116
4	Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor IEEE Electron Device Letters ·T. Henderson, M.I. Aksun, C. K. Peng, Hadis Morkoç, Pane Chane Chao, P.M. Smith, K.H.G. Duh, L. F. Lester	1986	99
5	Electron velocity in Si and GaAs at very high electric fields Applied Physics Letters ·P.M. Smith, M. Inoue, Jeffrey Frey	1980	92
6	Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs Electronics Letters ·P. Ho, Ming-Yih Kao, Pane Chane Chao, K.H.G. Duh, J. M. Ballingall, A.J. Tessmer, P.M. Smith +1 other	1991	89
7	Ultra-low-noise cryogenic high-electron-mobility transistors IEEE Transactions on Electron Devices ·K.H.G. Duh, M.W. Pospieszalski, William Kopp, P. Ho, Amani A. Jabra, Pane Chane Chao, P.M. Smith, L. F. Lester	1988	73
8	Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs IEEE Electron Device Letters ·Ming-Yih Kao, P.M. Smith, P. Ho, Pane Chane Chao, K.H.G. Duh, Amani A. Jabra, J. M. Ballingall	1989	59
9	W-band InGaAs HEMT low noise amplifiers IEEE MTT-S International Microwave Symposium digest ·K.H.G. Duh, Pane Chane Chao, P. Ho, A.J. Tessmer, S.M.J. Liu, Ming-Yih Kao, P.M. Smith, J. M. Ballingall	1990	58
10	Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique IEEE Transactions on Electron Devices ·Pane Chane Chao, P.M. Smith, Susan C. Palmateer, James C. M. Hwang	1985	53
11	Importance of electron scattering with coupled plasmon-optical phonon modes in GaAs planar-doped barrier transistors IEEE Electron Device Letters ·M.A. Hollis, Susan C. Palmateer, LESTER F. EASTMAN, Niru V. Dandekar, P.M. Smith	1983	47
12	Advances in HEMT Technology and Applications IEEE MTT-S International Microwave Symposium digest ·P.M. Smith, Pane Chane Chao, K.H.G. Dub, L. F. Lester, B.R. Lee, J. M. Ballingall	1987	46
13	Millimeter-wave low-noise high electron mobility transistors IEEE Electron Device Letters ·Pane Chane Chao, Susan C. Palmateer, P.M. Smith, Umesh Kumar Mishra, K.H.G. Duh, James C. M. Hwang	1985	43
14	Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates Applied Physics Letters ·M.I. Aksun, Hadis Morkoç, L. F. Lester, K.H.G. Duh, P.M. Smith, Pane Chane Chao, M. Longerbone, L. Peter Erickson	1986	38
15	Microwave performance of 0.25-µm gate length high electron mobility transistors IEEE Electron Device Letters ·Umesh Kumar Mishra, Susan C. Palmateer, Pane Chane Chao, P.M. Smith, James C. M. Hwang	1985	37
16	Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K IEEE Transactions on Electron Devices ·M.W. Pospieszalski, Sander Weinreb, Pane Chane Chao, Umesh Kumar Mishra, Susan C. Palmateer, P.M. Smith, James C. M. Hwang	1986	37
17	Microwave and mm-wave power amplification using pseudomorphic HEMTs Microwave journal ·P.M. Smith, Pane Chane Chao, J. M. Ballingall, Alan W. Swanson	1990	35
18	A 50nm MHEMT millimeter-wave MMIC LNA with wideband noise and gain performance IEEE MTT-S International Microwave Symposium digest ·P.M. Smith, M. Ashman, D. Xu, Xiaoping Yang, Carl Creamer, Pane Chane Chao, Kanin Chu, K.H.G. Duh	2014	33
19	0.1- $\mu \text{m}$ Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers IEEE Electron Device Letters ·D. Xu, Kuo-Hsiung Chu, José A.I. Díaz, M. Ashman, James J. Komiak, L. Mt. Pleasant, Carlton T. Creamer, Kirby B. Nichols	2015	32
20	0.1-µm Gate-length pseudomorphic HEMT's IEEE Electron Device Letters ·Pane Chane Chao, Richard C. Tiberio, K.H.G. Duh, P.M. Smith, J. M. Ballingall, L. F. Lester, B.R. Lee, Amani A. Jabra	1987	26

About P.M. Smith

P.M. Smith is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Astronomy and Astrophysics and Information Systems, having authored 101 papers that have together received 2k indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (73 papers), Advancements in Semiconductor Devices and Circuit Design (42 papers), GaN-based semiconductor devices and materials (38 papers), Advanced Power Amplifier Design (25 papers), Microwave Engineering and Waveguides (6 papers), Semiconductor materials and devices (5 papers), Semiconductor materials and interfaces (5 papers) and Semiconductor Quantum Structures and Devices (3 papers). The work is most often cited by research in Condensed Matter Physics (503 citations), Electrical and Electronic Engineering (1.8k citations), Atomic and Molecular Physics, and Optics (384 citations), Astronomy and Astrophysics (78 citations) and Aerospace Engineering (19 citations). P.M. Smith has collaborated with scholars based in United States and France. Frequent co-authors include Pane Chane Chao, K.H.G. Duh, J. M. Ballingall, P. Ho, Ming-Yih Kao, Amani A. Jabra, L. F. Lester, Susan C. Palmateer, James C. M. Hwang and A.J. Tessmer. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Electronics Letters, IEEE Transactions on Microwave Theory and Techniques and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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