Shu Yang

5.8k citations

131 papers · 4.9k · 1 hit paper · h-index 35

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 94
- GaN-based semiconductor devices and materials 94
Electronic, Optical and Magnetic Materials 67
- Ga2O3 and related materials 67

Co-authors: Kevin Jing Chen (49 shared papers)Kuang Sheng (40 shared papers)Sen Huang (21 shared papers)Qimeng Jiang (19 shared papers)Zhikai Tang (21 shared papers)Shaowen Han (15 shared papers)Cheng Liu (20 shared papers)Yunyou Lu (18 shared papers)
Journals: IEEE Electron Device Letters (20 papers)IEEE Transactions on Electron Devices (14 papers)Applied Physics Letters (11 papers)IEEE Journal of Emerging and Selected Topics in Power Electronics (6 papers)IEEE Transactions on Power Electronics (3 papers)
Partner nations: China Hong Kong United States

In The Last Decade

Shu Yang

120 papers receiving 4.9k citations

Shu Yang's Hit Papers

align trajectories log scale

The 2018 GaN power electronics roadmap 2018 · 1.1k citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2018 Journal of Physics D Applied Physics

Peers

Countries citing papers authored by Shu Yang

Since Specialization

Citations

This map shows the geographic impact of Shu Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shu Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shu Yang more than expected).

Fields of papers citing papers by Shu Yang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shu Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shu Yang. The network helps show where Shu Yang may publish in the future.

Co-authors

The 25 scholars most cited alongside Shu Yang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Shu Yang Line = papers co-authored together Shu Yang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 131 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	The 2018 GaN power electronics roadmap Journal of Physics D Applied Physics ·Hiroshi Amano, Yannick Baines, Edward Beam, Matteo Borga, Thierry Bouchet, Paul Raymond Chalker, Matthew Charles, Kevin Jing Chen Hit paper breakdown →	2018	1091
2	600-V Normally Off ${\rm SiN}_{x}$/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse IEEE Electron Device Letters ·Zhikai Tang, Qimeng Jiang, Yunyou Lu, Sen Huang, Shu Yang, Xi Sheng Tang, Kevin Jing Chen	2013	241
3	Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film IEEE Electron Device Letters ·Sen Huang, Qimeng Jiang, Shu Yang, Chunhua Zhou, Kevin Jing Chen	2012	227
4	High-Quality Interface in ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}/{\rm GaN}/{\rm AlGaN}/{\rm GaN}$ MIS Structures With In Situ Pre-Gate Plasma Nitridation IEEE Electron Device Letters ·Shu Yang, Zhikai Tang, King‐Yuen Wong, Yu‐Syuan Lin, Cheng Liu, Yunyou Lu, Sen Huang, Kevin Jing Chen	2013	176
5	Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses IEEE Transactions on Power Electronics ·Rui Li, Xinke Wu, Shu Yang, Kuang Sheng	2018	157
6	Threshold Voltage Instability in Al2O3/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors Japanese Journal of Applied Physics ·Sen Huang, Shu Yang, John C. Roberts, Kevin Jing Chen	2011	149
7	Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling IEEE Journal of Emerging and Selected Topics in Power Electronics ·Shu Yang, Shaowen Han, Kuang Sheng, Kevin Jing Chen	2019	131
8	Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges IEEE Electron Device Letters ·Sen Huang, Qimeng Jiang, Shu Yang, Zhikai Tang, Kevin Jing Chen	2013	122
9	High-Voltage and High- $I_{\text {ON}}/I_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination IEEE Electron Device Letters ·Shaowen Han, Shu Yang, Kuang Sheng	2018	120
10	Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer IEEE Electron Device Letters ·Shenghou Liu, Shu Yang, Zhikai Tang, Qimeng Jiang, Cheng Liu, Maojun Wang, Kevin Jing Chen	2014	111
11	Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs IEEE Transactions on Electron Devices ·Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Kai Fu, Zhihua Dong, Yong Kui Cai, Baoshun Zhang	2015	104
12	AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs IEEE Transactions on Electron Devices ·Shu Yang, Shenghou Liu, Yunyou Lu, Cheng Liu, Kevin Jing Chen	2015	100
13	Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer Applied Physics Letters ·Shenghou Liu, Shu Yang, Zhikai Tang, Qimeng Jiang, Cheng Liu, Maojun Wang, Bo Shen, Kevin Jing Chen	2015	96
14	Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices IEEE Transactions on Electron Devices ·Shu Yang, Chunhua Zhou, Shaowen Han, Jin Wei, Kuang Sheng, Kevin Jing Chen	2017	90
15	GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric IEEE Electron Device Letters ·Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Kai Fu, Zhihua Dong, Yong Kui Cai, Baoshun Zhang	2015	88
16	Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier With High Blocking Voltage and Low Forward Voltage Drop IEEE Electron Device Letters ·Shaowen Han, Shu Yang, Kuang Sheng	2019	88
17	Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode IEEE Transactions on Power Electronics ·Shaowen Han, Shu Yang, Rui Li, Xinke Wu, Kuang Sheng	2018	70
18	Characterization of V T ‐instability in enhancement‐mode Al 2 O 3 ‐AlGaN/GaN MIS‐HEMTs Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Yunyou Lu, Shu Yang, Qimeng Jiang, Zhikai Tang, Baikui Li, Kevin Jing Chen	2013	69
19	Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Shu Yang, Zhikai Tang, King‐Yuen Wong, Yu‐Syuan Lin, Yunyou Lu, Sen Huang, Kevin Jing Chen	2013	68
20	Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension IEEE Transactions on Electron Devices ·Weibing Hao, Feihong Wu, Wenshen Li, Guangwei Xu, Xuan Xie, Kai Zhou, Wei Guo, Xuanze Zhou	2023	66

About Shu Yang

Shu Yang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment and Materials Chemistry, having authored 131 papers that have together received 4.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (94 papers), Ga2O3 and related materials (67 papers), Semiconductor materials and devices (60 papers), Silicon Carbide Semiconductor Technologies (49 papers), ZnO doping and properties (19 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Advanced Photocatalysis Techniques (11 papers) and Electronic and Structural Properties of Oxides (7 papers). The work is most often cited by research in Condensed Matter Physics (4.1k citations), Electronic, Optical and Magnetic Materials (2.3k citations), Electrical and Electronic Engineering (3.7k citations), Atomic and Molecular Physics, and Optics (720 citations) and Materials Chemistry (1.0k citations). Shu Yang has collaborated with scholars based in China, Hong Kong and United States. Frequent co-authors include Kevin Jing Chen, Kuang Sheng, Sen Huang, Qimeng Jiang, Zhikai Tang, Shaowen Han, Cheng Liu, Yunyou Lu, Shenghou Liu and Chunhua Zhou. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Journal of Emerging and Selected Topics in Power Electronics and IEEE Transactions on Power Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Shu Yang's Hit Papers

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All Works

About Shu Yang

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