Jin Wei

6.1k citations

214 papers · 4.8k · 1 hit paper · h-index 37

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 157
- GaN-based semiconductor devices and materials 157
Electrical and Electronic Engineering 171
- Silicon Carbide Semiconductor Technologies 108
- Semiconductor materials and devices 96
- Advancements in Semiconductor Devices and Circuit Design 58
- Radio Frequency Integrated Circuit Design 8

Co-authors: Kevin Jing Chen (118 shared papers)Zheyang Zheng (60 shared papers)Gaofei Tang (29 shared papers)Mengyuan Hua (47 shared papers)Meng Zhang (39 shared papers)Huaping Jiang (17 shared papers)Li Zhang (22 shared papers)Yuru Wang (22 shared papers)
Journals: IEEE Electron Device Letters (42 papers)IEEE Transactions on Electron Devices (30 papers)IEEE Transactions on Power Electronics (8 papers)Applied Physics Letters (6 papers)IEEE Journal of the Electron Devices Society (5 papers)
Partner nations: China Hong Kong United Kingdom

In The Last Decade

Jin Wei

201 papers receiving 4.7k citations

Jin Wei's Hit Papers

align trajectories log scale

Gallium nitride-based complementary logic integrated circuits 2021 · 252 citations

What are hit papers?

Paper score: A paper's citations measured against the top-1% bar of its own field and year: the square root of citations ÷ bar, so 1 means right at the bar and 2 means four times its citations. The bar blends the citation counts that enter the top 1% of the paper's subfields in its year (weighted 89.5%), of those subfields over all years (0.5%) and of its year across all fields (10%); a subfield and year with fewer than 400 papers takes its year's bar. Papers from 2026 are not scored yet: in an unfinished year, when a paper appeared matters more than how it is cited.

Hit paper: A paper cited at least 1.5× the top-1% bar of its field and year: a paper score of at least √1.5.

2021 Nature Electronics

Peers

Countries citing papers authored by Jin Wei

Since Specialization

Citations

This map shows the geographic impact of Jin Wei's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jin Wei with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jin Wei more than expected).

Fields of papers citing papers by Jin Wei

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jin Wei. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jin Wei. The network helps show where Jin Wei may publish in the future.

Co-authors

The 25 scholars most cited alongside Jin Wei, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Jin Wei Line = papers co-authored together Jin Wei links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 214 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Gallium nitride-based complementary logic integrated circuits Nature Electronics ·Zheyang Zheng, Li Zhang, Wenjie Song, Sirui Feng, Han Xu, Jiahui Sun, Song Lin Yang, Tao Chen Hit paper breakdown →	2021	252
2	Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations IEEE Transactions on Power Electronics ·Hanxing Wang, Jin Wei, Ruiliang Xie, Cheng Liu, Gaofei Tang, Kevin Jing Chen	2016	249
3	Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs IEEE Electron Device Letters ·Jin Wei, Ruiliang Xie, Han Xu, Hanxing Wang, Yuru Wang, Mengyuan Hua, Kailun Zhong, Gaofei Tang	2019	160
4	High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ /${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform IEEE Electron Device Letters ·Zheyang Zheng, Wenjie Song, Li Zhang, Jin Wei, Kevin Jing Chen +1 other	2019	128
5	Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs IEEE Transactions on Electron Devices ·Jiabei He, Jin Wei, Yuru Wang, Kailun Zhong, Kevin Jing Chen +1 other	2019	117
6	Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Mengyuan Hua, Zhaofu Zhang, Jin Wei, Jiacheng Lei, Gaofei Tang, Kai Fu, Yong Kui Cai, Baoshun Zhang	2016	103
7	Low On-Resistance Normally-Off GaN Double-Channel Metal–Oxide–Semiconductor High-Electron-Mobility Transistor IEEE Electron Device Letters ·Jin Wei, Shenghou Liu, Baikui Li, Xi Sheng Tang, Yunyou Lu, Cheng Liu, Mengyuan Hua, Zhaofu Zhang	2015	101
8	Impact of Substrate Bias Polarity on Buffer-Related Current Collapse in AlGaN/GaN-on-Si Power Devices IEEE Transactions on Electron Devices ·Shu Yang, Chunhua Zhou, Shaowen Han, Jin Wei, Kuang Sheng, Kevin Jing Chen	2017	90
9	Dynamic Degradation in SiC Trench MOSFET With a Floating p-Shield Revealed With Numerical Simulations IEEE Transactions on Electron Devices ·Jin Wei, Meng Zhang, Huaping Jiang, Hanxing Wang, Kevin Jing Chen	2017	83
10	OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs IEEE Journal of Emerging and Selected Topics in Power Electronics ·Junting Chen, Mengyuan Hua, Jin Wei, Jiabei He, Chengcai Wang, Zheyang Zheng, Kevin Jing Chen	2020	82
11	GaN Power Integration Technology and Its Future Prospects IEEE Transactions on Electron Devices ·Jin Wei, Zheyang Zheng, Gaofei Tang, Han Xu, Gang Lyu, Li Zhang, Junting Chen, Mengyuan Hua	2023	82
12	Low ON-Resistance SiC Trench/Planar MOSFET With Reduced OFF-State Oxide Field and Low Gate Charges IEEE Electron Device Letters ·Jin Wei, Meng Zhang, Huaping Jiang, Ching‐Hsiang Cheng, Kevin Jing Chen	2016	82
13	Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy IEEE Electron Device Letters ·Song Lin Yang, Sen Huang, Jin Wei, Zheyang Zheng, Yuru Wang, Jiabei He, Kevin Jing Chen	2020	80
14	Normally-Off LPCVD-SiN x /GaN MIS-FET With Crystalline Oxidation Interlayer IEEE Electron Device Letters ·Mengyuan Hua, Jin Wei, Gaofei Tang, Zhaofu Zhang, Qingkai Qian, Xiangbin Cai, Ning Wang, Kevin Jing Chen	2017	76
15	650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode IEEE Electron Device Letters ·Jiacheng Lei, Jin Wei, Gaofei Tang, Zhaofu Zhang, Qingkai Qian, Zheyang Zheng, Mengyuan Hua, Kevin Jing Chen	2017	72
16	E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs IEEE Electron Device Letters ·Chengcai Wang, Mengyuan Hua, Junting Chen, Song Lin Yang, Zheyang Zheng, Jin Wei, Li Zhang, Kevin Jing Chen	2020	72
17	SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss IEEE Electron Device Letters ·Huaping Jiang, Jin Wei, Xiaoping Dai, Maolong Ke, Ian Deviny, Philip Mawby	2016	67
18	Short Circuit Capability and Short Circuit Induced $V_{\mathrm{TH}}$ Instability of a 1.2-kV SiC Power MOSFET IEEE Journal of Emerging and Selected Topics in Power Electronics ·Jiahui Sun, Jin Wei, Zheyang Zheng, Yuru Wang, Kevin Jing Chen	2019	60
19	Planar GaN Power Integration – The World is Flat Rare & Special e-Zone (The Hong Kong University of Science and Technology) ·Kevin Jing Chen, Jin Wei, Gaofei Tang, Han Xu, Zheyang Zheng, Li Zhang, Wenjie Song	2020	60
20	GaN power IC technology on p -GaN gate HEMT platform Japanese Journal of Applied Physics ·Jin Wei, Gaofei Tang, Ruiliang Xie, Kevin Jing Chen	2019	59

About Jin Wei

Jin Wei is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 214 papers that have together received 4.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (157 papers), Silicon Carbide Semiconductor Technologies (108 papers), Semiconductor materials and devices (96 papers), Advancements in Semiconductor Devices and Circuit Design (58 papers), Ga2O3 and related materials (47 papers), Semiconductor Quantum Structures and Devices (31 papers), ZnO doping and properties (23 papers) and Radio Frequency Integrated Circuit Design (8 papers). The work is most often cited by research in Condensed Matter Physics (3.5k citations), Electronic, Optical and Magnetic Materials (1.5k citations), Electrical and Electronic Engineering (3.8k citations), Atomic and Molecular Physics, and Optics (761 citations) and Materials Chemistry (616 citations). Jin Wei has collaborated with scholars based in China, Hong Kong and United Kingdom. Frequent co-authors include Kevin Jing Chen, Zheyang Zheng, Gaofei Tang, Mengyuan Hua, Meng Zhang, Huaping Jiang, Li Zhang, Yuru Wang, Jiabei He and Song Lin Yang. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Transactions on Power Electronics, Applied Physics Letters and IEEE Journal of the Electron Devices Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Jin Wei's Hit Papers

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Fields of papers citing papers by Jin Wei

All Works

About Jin Wei

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