Alessandro Chini

5.4k citations

150 papers · 4.4k · 2 hit papers · h-index 32

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 134
- Semiconductor materials and devices 68
- Silicon Carbide Semiconductor Technologies 59
- Radio Frequency Integrated Circuit Design 32
- Advancements in Semiconductor Devices and Circuit Design 23
Condensed Matter Physics 133
- GaN-based semiconductor devices and materials 133

Co-authors: Gaudenzio Meneghesso (62 shared papers)Enrico Zanoni (58 shared papers)Umesh K. Mishra (32 shared papers)Matteo Meneghini (29 shared papers)S. Keller (24 shared papers)G. Verzellesi (45 shared papers)S. Heikman (24 shared papers)D. Buttari (22 shared papers)
Journals: IEEE Transactions on Electron Devices (18 papers)IEEE Electron Device Letters (14 papers)Microelectronics Reliability (11 papers)Electronics Letters (8 papers)Applied Physics Letters (3 papers)
Partner nations: Italy United States France

In The Last Decade

Alessandro Chini

140 papers receiving 4.2k citations

Alessandro Chini's Hit Papers

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GaN-based power devices: Physics, reliability, and perspectives 2021 · 432 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2021 Journal of Applied Physics
2013 IEEE Transactions on Electron Devices

Peers

Countries citing papers authored by Alessandro Chini

Since Specialization

Citations

This map shows the geographic impact of Alessandro Chini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alessandro Chini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alessandro Chini more than expected).

Fields of papers citing papers by Alessandro Chini

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alessandro Chini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alessandro Chini. The network helps show where Alessandro Chini may publish in the future.

Co-authors

The 25 scholars most cited alongside Alessandro Chini, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Alessandro Chini Line = papers co-authored together Alessandro Chini links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 150 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	GaN-based power devices: Physics, reliability, and perspectives Journal of Applied Physics ·Matteo Meneghini, Carlo De Santi, Idriss Abid, Matteo Buffolo, Marcello Cioni, Riyaz Abdul Khadar, Luca Nela, Nicolò Zagni, Alessandro Chini, Farid Medjdoub, Gaudenzio Meneghesso, G. Verzellesi, Enrico Zanoni, Elison Matioli Hit paper breakdown →	2021	432
2	Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements IEEE Transactions on Electron Devices ·Davide Bisi, Matteo Meneghini, Carlo De Santi, Alessandro Chini, Michael Dammann, Peter Brückner, M. Mikulla, Gaudenzio Meneghesso, Enrico Zanoni Hit paper breakdown →	2013	362
3	High Breakdown Voltage AlGaN–GaN HEMTs Achieved by Multiple Field Plates IEEE Electron Device Letters ·Huili Grace Xing, Y. Dora, Alessandro Chini, S. Heikman, S. Keller, Umesh K. Mishra	2004	309
4	Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs IEEE Transactions on Electron Devices ·Gaudenzio Meneghesso, G. Verzellesi, R. Pierobon, Fabiana Rampazzo, Alessandro Chini, Umesh K. Mishra, C. Canali, Enrico Zanoni	2004	257
5	N-polar GaN∕AlGaN∕GaN high electron mobility transistors Journal of Applied Physics ·Siddharth Rajan, Alessandro Chini, Man Hoi Wong, James S. Speck, Umesh K. Mishra	2007	210
6	N-polar GaN epitaxy and high electron mobility transistors Semiconductor Science and Technology ·Man Hoi Wong, S. Keller, Sansaptak Dasgupta Nidhi, Daniel J. Denninghoff, Seshadri Kolluri, David F. Brown, Jing Lu, N. Fichtenbaum, Elaheh Ahmadi, Uttam Singisetti, Alessandro Chini, Siddharth Rajan, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2013	197
7	Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements IEEE Transactions on Electron Devices ·Matteo Meneghini, Isabella Rossetto, Davide Bisi, Antonio Stocco, Alessandro Chini, A. Pantellini, C. Lanzieri, A. Nanni, Gaudenzio Meneghesso, Enrico Zanoni	2014	156
8	AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction IEEE Transactions on Electron Devices ·Enrico Zanoni, Matteo Meneghini, Alessandro Chini, Denis Marcon, Gaudenzio Meneghesso	2013	115
9	Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias Applied Physics Letters ·Matteo Meneghini, Antonio Stocco, Marco Bertin, Denis Marcon, Alessandro Chini, Gaudenzio Meneghesso, Enrico Zanoni	2012	106
10	Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers IEEE Transactions on Electron Devices ·Alessandro Chini, Gaudenzio Meneghesso, Matteo Meneghini, F. Fantini, G. Verzellesi, Alfonso Patti, Ferdinando Iucolano	2016	97
11	12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate Electronics Letters ·Alessandro Chini, D. Buttari, R. Coffie, S. Heikman, S. Keller, Umesh K. Mishra	2004	95
12	High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation IEEE Electron Device Letters ·L. Shen, R. Coffie, D. Buttari, S. Heikman, A. Chakraborty, Alessandro Chini, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2004	94
13	Reliability issues of Gallium Nitride High Electron Mobility Transistors International Journal of Microwave and Wireless Technologies ·Gaudenzio Meneghesso, Matteo Meneghini, Augusto Tazzoli, N. Ronchi, Antonio Stocco, Alessandro Chini, Enrico Zanoni	2010	90
14	Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs IEEE Electron Device Letters ·Alessandro Chini, D. Buttari, R. Coffie, L. Shen, S. Heikman, A. Chakraborty, S. Keller, Umesh K. Mishra	2004	86
15	Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs IEEE Transactions on Electron Devices ·Tomás Palacios, Alessandro Chini, D. Buttari, S. Heikman, A. Chakraborty, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2006	86
16	Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors IEEE Transactions on Device and Materials Reliability ·Mustapha Faqir, G. Verzellesi, Alessandro Chini, F. Fantini, Francesca Danesin, Gaudenzio Meneghesso, Enrico Zanoni, C. Dua	2008	82
17	Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures Applied Physics Letters ·D. Buttari, Alessandro Chini, Tomás Palacios, R. Coffie, Lingyan Shen, Huili Grace Xing, S. Heikman, L. McCarthy, A. Chakraborty, S. Keller, U. K. Mishra	2003	78
18	A C-band high-dynamic range GaN HEMT low-noise amplifier IEEE Microwave and Wireless Components Letters ·Hongtao Xu, C. Sanabria, Alessandro Chini, S. Keller, Umesh K. Mishra, R.A. York	2004	68
19	p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) IEEE Electron Device Letters ·R. Coffie, D. Buttari, S. Heikman, S. Keller, Alessandro Chini, L. Shen, Umesh K. Mishra	2002	56
20	“Hole Redistribution” Model Explaining the Thermally Activated R _ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs IEEE Transactions on Electron Devices ·Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Paolo Pavan, G. Verzellesi	2021	55

About Alessandro Chini

Alessandro Chini is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 150 papers that have together received 4.4k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (133 papers), Semiconductor materials and devices (68 papers), Silicon Carbide Semiconductor Technologies (59 papers), Semiconductor Quantum Structures and Devices (50 papers), Radio Frequency Integrated Circuit Design (32 papers), Ga2O3 and related materials (29 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and ZnO doping and properties (13 papers). The work is most often cited by research in Condensed Matter Physics (4.0k citations), Electronic, Optical and Magnetic Materials (1.4k citations), Electrical and Electronic Engineering (3.4k citations), Atomic and Molecular Physics, and Optics (1.2k citations) and Materials Chemistry (711 citations). Alessandro Chini has collaborated with scholars based in Italy, United States and France. Frequent co-authors include Gaudenzio Meneghesso, Enrico Zanoni, Umesh K. Mishra, Matteo Meneghini, S. Keller, G. Verzellesi, S. Heikman, D. Buttari, Nicolò Zagni and Carlo De Santi. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Microelectronics Reliability, Electronics Letters and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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