Yasuhiro Uemoto

4.8k citations

65 papers · 4.0k · 2 hit papers · h-index 26

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 54
- Silicon Carbide Semiconductor Technologies 29
- Semiconductor materials and devices 27
- Thin-Film Transistor Technologies 10
- Advancements in Semiconductor Devices and Circuit Design 7
Condensed Matter Physics 34
- GaN-based semiconductor devices and materials 34

Co-authors: Tetsuzo Ueda (26 shared papers)Manabu Yanagihara (17 shared papers)Kevin J. Chen (1 shared paper)Alex Lidow (1 shared paper)Oliver D. Häberlen (1 shared paper)Yifeng Wu (1 shared paper)Masahiro Hikita (18 shared papers)Hidetoshi Ishida (11 shared papers)
Journals: IEEE Transactions on Electron Devices (12 papers)Japanese Journal of Applied Physics (9 papers)Applied Physics Letters (2 papers)Integrated ferroelectrics (2 papers)physica status solidi (b) (1 paper)
Partner nations: Japan United States Poland

In The Last Decade

Yasuhiro Uemoto

62 papers receiving 3.9k citations

Yasuhiro Uemoto's Hit Papers

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GaN-on-Si Power Technology: Devices and Applications 2017 · 1.3k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2017 IEEE Transactions on Electron Devices
2007 IEEE Transactions on Electron Devices

Peers

Countries citing papers authored by Yasuhiro Uemoto

Since Specialization

Citations

This map shows the geographic impact of Yasuhiro Uemoto's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yasuhiro Uemoto with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yasuhiro Uemoto more than expected).

Fields of papers citing papers by Yasuhiro Uemoto

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yasuhiro Uemoto. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yasuhiro Uemoto. The network helps show where Yasuhiro Uemoto may publish in the future.

Co-authors

The 25 scholars most cited alongside Yasuhiro Uemoto, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Yasuhiro Uemoto Line = papers co-authored together Yasuhiro Uemoto links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 65 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	GaN-on-Si Power Technology: Devices and Applications IEEE Transactions on Electron Devices ·Kevin J. Chen, Oliver D. Häberlen, Alex Lidow, C. L. Tsai, Tetsuzo Ueda, Yasuhiro Uemoto, Yifeng Wu Hit paper breakdown →	2017	1293
2	Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation IEEE Transactions on Electron Devices ·Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda Hit paper breakdown →	2007	859
3	Current-collapse-free operations up to 850 V by GaN-GIT utilizing hole injection from drain Saichiro Kaneko, Masayuki Kuroda, Manabu Yanagihara, Ayanori Ikoshi, Hideyuki Okita, Tatsuo Morita, Kenichiro Tanaka, Masahiro Hikita, Yasuhiro Uemoto, Satoru Takahashi, Tetsuzo Ueda	2015	161
4	99.3% Efficiency of three-phase inverter for motor drive using GaN-based Gate Injection Transistors Tatsuo Morita, Satoshi Tamura, Yoshiharu Anda, Masahiro Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2011	138
5	Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor Applied Physics Letters ·Kenichiro Tanaka, Tatsuo Morita, Hidekazu Umeda, Saichiro Kaneko, Masayuki Kuroda, Ayanori Ikoshi, Hiroto Yamagiwa, Hideyuki Okita, Masahiro Hikita, Manabu Yanagihara, Yasuhiro Uemoto, Satoru Takahashi, Hiroaki Ueno, Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda	2015	110
6	Recent advances in GaN transistors for future emerging applications physica status solidi (a) ·Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2009	87
7	8300V Blocking Voltage AlGaN/GaN Power HFET with Thick Poly-AlN Passivation Yasuhiro Uemoto, Daisuke Shibata, Manabu Yanagihara, Hidetoshi Ishida, Hisayoshi Matsuo, Shuichi Nagai, Nagaraj Batta, Ming Li, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2007	86
8	650 V 3.1 mΩcm<sup>2</sup> GaN-based monolithic bidirectional switch using normally-off gate injection transistor Tatsuo Morita, Manabu Yanagihara, Hidetoshi Ishida, Masahiro Hikita, Kazuhiro Kaibara, Hisayoshi Matsuo, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2007	83
9	GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate Yasuhiro Uemoto, Tatsuo Morita, Ayanori Ikoshi, Hidekazu Umeda, Hisayoshi Matsuo, Jun Shimizu, Masahiro Hikita, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2009	77
10	AlGaN/GaN Power HFET on Silicon Substrate With Source-Via Grounding (SVG) Structure IEEE Transactions on Electron Devices ·Masahiro Hikita, Masataka Yanagihara, Kazuhiro Nakazawa, Hideki Ueno, Yutaka Hirose, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daiju Ueda, Takashi Egawa	2005	66
11	AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading IEEE Transactions on Electron Devices ·Naohiro Tsurumi, Hiroaki Ueno, Tomohiro Murata, Hidetoshi Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Kaoru Inoue, Tsuyoshi Tanaka	2010	60
12	A High-Power RF Switch IC Using AlGaN/GaN HFETs With Single-Stage Configuration IEEE Transactions on Electron Devices ·H. Ishida, Yutaka Hirose, Takuya Murata, Y. Ikeda, Takahiro Matsuno, Koji Inoue, Yasuhiro Uemoto, Tsuyoshi Tanaka, Takashi Egawa, Daiju Ueda	2005	60
13	GaN power switching devices Masahiro Ishida, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2010	59
14	Reliability of hybrid-drain-embedded gate injection transistor Kenichiro Tanaka, Tatsuo Morita, Masahiro Ishida, Tsuguyasu Hatsuda, Tetsuzo Ueda, Kazuki Yokoyama, Ayanori Ikoshi, Masahiro Hikita, Masahiro Toki, Manabu Yanagihara, Yasuhiro Uemoto	2017	55
15	Unlimited High Breakdown Voltage by Natural Super Junction of Polarized Semiconductor IEEE Electron Device Letters ·Hidetoshi Ishida, Daisuke Shibata, Manabu Yanagihara, Yasuhiro Uemoto, Hisayoshi Matsuo, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2008	53
16	Analysis of solid phase crystallization in amorphized polycrystalline Si films on quartz substrates Journal of Applied Physics ·Akira Nakamura, Fumiaki Emoto, Eiji Fujii, A. Yamamoto, Yasuhiro Uemoto, Kohji Senda, G. Kano	1989	48
17	A Normally-off AlGaN/GaN Transistor with R<sub>on</sub>A=2.6m&#x003A9;cm<sup>2</sup> and BV<sub>ds</sub>=640V Using Conductivity Modulation Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2006	47
18	Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba_0.7Sr_0.3TiO₃ Capacitors Integrated in a Silicon Device Japanese Journal of Applied Physics ·Yasuhiro Shimada, A. Inoue, Toru Nasu, Koji Arita, Yoshihisa Nagano, Akihiro MATSUDA, Yasuhiro Uemoto, Eiji Fujii, M. Azuma, Yoshiro Oishi, S. Hayashi, T. Otsuki	1996	41
19	GaN-based natural super junction diodes with multi-channel structures Hidetoshi Ishida, Daisuke Shibata, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda	2008	41
20	Ferroelectric Nonvolatile Memory Technology and Its Applications Japanese Journal of Applied Physics ·Tatsumi Sumi, Y. Judai, Kanji Hirano, Toyoji Ito, Takumi Mikawa, Masato Takeo, M. Azuma, Shin-ichiro Hayashi, Yasuhiro Uemoto, Koji Arita, Toru Nasu, Yoshihisa Nagano, A. Inoue, Akihiro MATSUDA, Eiji Fuji, Yasuhiro Shimada, T. Otsuki	1996	37

About Yasuhiro Uemoto

Yasuhiro Uemoto is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Biomedical Engineering, having authored 65 papers that have together received 4.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), Silicon Carbide Semiconductor Technologies (29 papers), Semiconductor materials and devices (27 papers), Ga2O3 and related materials (15 papers), Thin-Film Transistor Technologies (10 papers), Ferroelectric and Piezoelectric Materials (9 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Acoustic Wave Resonator Technologies (6 papers). The work is most often cited by research in Condensed Matter Physics (3.3k citations), Electronic, Optical and Magnetic Materials (1.5k citations), Electrical and Electronic Engineering (3.2k citations), Atomic and Molecular Physics, and Optics (617 citations) and Materials Chemistry (884 citations). Yasuhiro Uemoto has collaborated with scholars based in Japan, United States and Poland. Frequent co-authors include Tetsuzo Ueda, Manabu Yanagihara, Kevin J. Chen, Alex Lidow, Oliver D. Häberlen, Yifeng Wu, Masahiro Hikita, Hidetoshi Ishida, Hisayoshi Matsuo and Tsuyoshi Tanaka. Their work appears in journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics, Applied Physics Letters, Integrated ferroelectrics and physica status solidi (b).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Yasuhiro Uemoto

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In The Last Decade

Yasuhiro Uemoto

Yasuhiro Uemoto's Hit Papers

Peers

Countries citing papers authored by Yasuhiro Uemoto

Fields of papers citing papers by Yasuhiro Uemoto

All Works

About Yasuhiro Uemoto

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