L. Goux

5.0k citations

149 papers · 3.5k · h-index 32

Impact in

Electrical and Electronic Engineering top 1%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
Polymers and Plastics top 2%
- Transition Metal Oxide Nanomaterials

Papers in

Electrical and Electronic Engineering 136
- Advanced Memory and Neural Computing 101
- Ferroelectric and Negative Capacitance Devices 85
- Semiconductor materials and devices 73
Materials Chemistry 72
- Ferroelectric and Piezoelectric Materials 31
- Electronic and Structural Properties of Oxides 22
- Phase-change materials and chalcogenides 17

Co-authors: M. Jurczak (76 shared papers)R. Degraeve (59 shared papers)Dirk J. Wouters (67 shared papers)A. Fantini (54 shared papers)B. Govoreanu (35 shared papers)G. Groeseneken (32 shared papers)Gouri Sankar Kar (40 shared papers)Sergiu Clima (29 shared papers)
Journals: Microelectronic Engineering (13 papers)Applied Physics Letters (11 papers)Journal of Applied Physics (10 papers)IEEE Electron Device Letters (7 papers)Solid-State Electronics (6 papers)
Partner nations: Belgium France Italy

In The Last Decade

L. Goux

148 papers receiving 3.5k citations

Peers

Countries citing papers authored by L. Goux

Since Specialization

Citations

This map shows the geographic impact of L. Goux's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Goux with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Goux more than expected).

Fields of papers citing papers by L. Goux

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Goux. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Goux. The network helps show where L. Goux may publish in the future.

Co-authors

The 25 scholars most cited alongside L. Goux, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with L. Goux Line = papers co-authored together L. Goux links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 149 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells Applied Physics Letters ·L. Goux, P. Czarnecki, Y. Y. Chen, L. Pantisano, X. P. Wang, R. Degraeve, B. Govoreanu, M. Jurczak, D. J. Wouters, L. Altimime	2010	203
2	Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers Journal of Applied Physics ·L. Goux, J. G. Lisoni, M. Jurczak, Dirk J. Wouters, L. Courtade, Christophe Müller	2010	173
3	Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM IEEE Transactions on Electron Devices ·Yang Yin Chen, B. Govoreanu, L. Goux, R. Degraeve, A. Fantini, Gouri Sankar Kar, Dirk J. Wouters, G. Groeseneken, J. A. Kittl, M. Jurczak, L. Altimime	2012	160
4	Causes and consequences of the stochastic aspect of filamentary RRAM Microelectronic Engineering ·R. Degraeve, A. Fantini, Nagarajan Raghavan, L. Goux, Sergiu Clima, B. Govoreanu, Attilio Belmonte, D. Linten, M. Jurczak	2015	113
5	Intrinsic switching variability in HfO<inf>2</inf> RRAM A. Fantini, L. Goux, R. Degraeve, Dirk J. Wouters, Nagarajan Raghavan, Gouri Sankar Kar, Attilio Belmonte, Y.-Y. Chen, B. Govoreanu, M. Jurczak	2013	112
6	On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems Electrochemical and Solid-State Letters ·L. Goux, Y.-Y. Chen, L. Pantisano, X.-P. Wang, G. Groeseneken, M. Jurczak, Dirk J. Wouters	2010	106
7	Control of filament size and reduction of reset current below 10μA in NiO resistance switching memories Solid-State Electronics ·F. Nardi, Daniele Ielmini, C. Cagli, Sabina Spiga, M. Fanciulli, L. Goux, Dirk J. Wouters	2010	96
8	Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells Applied Physics Letters ·L. Goux, Karl Opsomer, R. Degraeve, Robert Müller, Christophe Detavernier, D. J. Wouters, M. Jurczak, L. Altimime, J. A. Kittl	2011	92
9	Dynamic ‘hour glass’ model for SET and RESET in HfO<inf>2</inf> RRAM R. Degraeve, A. Fantini, Sergiu Clima, B. Govoreanu, L. Goux, Y.Y. Chen, Dirk J. Wouters, Ph. Roussel, Gouri Sankar Kar, Geoffrey Pourtois, Stefan Cosemans, J. A. Kittl, G. Groeseneken, M. Jurczak, L. Altimime	2012	71
10	Intrinsic program instability in HfO2 RRAM and consequences on program algorithms A. Fantini, Georgi Gorine, R. Degraeve, L. Goux, C. Y. Chen, A. Redolfi, Sergiu Clima, A. Cabrini, G. Torelli, M. Jurczak	2015	67
11	Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability CINECA IRIS Institutial research information system (University of Pisa) ·Nagarajan Raghavan, R. Degraeve, A. Fantini, L. Goux, Sebastiano Strangio, B. Govoreanu, Dirk J. Wouters, G. Groeseneken, M. Jurczak	2013	64
12	Thermally stable integrated Se-based OTS selectors with >20 MA/cm² current drive, >3.10³ half-bias nonlinearity, tunable threshold voltage and excellent endurance B. Govoreanu, Gabriele Luca Donadio, Karl Opsomer, Wouter Devulder, V. V. Afanas’ev, T. Witters, Sergiu Clima, Naga Sruti Avasarala, A. Redolfi, Shreya Kundu, Olivier Richard, D. Tsvetanova, Geoffrey Pourtois, C. Detavemier, L. Goux, Gouri Sankar Kar	2017	59
13	Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures A. Fantini, Dirk J. Wouters, R. Degraeve, L. Goux, L. Pantisano, Gouri Sankar Kar, Y.-Y. Chen, B. Govoreanu, J. A. Kittl, L. Altimime, M. Jurczak	2012	57
14	Ultralow sub-500nA operating current high-performance TiN\Al<inf>2</inf>O<inf>3</inf>\HfO<inf>2</inf>\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering L. Goux, A. Fantini, Gouri Sankar Kar, Y.-Y. Chen, N. Jossart, R. Degraeve, Sergiu Clima, B. Govoreanu, G. Lorenzo, Geoffrey Pourtois, Dirk J. Wouters, J. A. Kittl, L. Altimime, M. Jurczak	2012	55
15	Intrinsic Tailing of Resistive States Distributions in Amorphous HfO<sub><italic>x</italic></sub> and TaO<sub><italic>x</italic></sub> Based Resistive Random Access Memories IEEE Electron Device Letters ·Sergiu Clima, Y. Y. Chen, A. Fantini, L. Goux, R. Degraeve, B. Govoreanu, Geoffrey Pourtois, M. Jurczak	2015	52
16	Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments R. Degraeve, Ph. Roussel, L. Goux, Dirk J. Wouters, J. A. Kittl, L. Altimime, M. Jurczak, G. Groeseneken	2010	51
17	Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability Nagarajan Raghavan, R. Degraeve, A. Fantini, L. Goux, Dirk J. Wouters, G. Groeseneken, M. Jurczak	2013	51
18	Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device Applied Physics Letters ·Yang Yin Chen, Geoffrey Pourtois, Christoph Adelmann, L. Goux, B. Govoreanu, Robin Degreave, M. Jurczak, J. A. Kittl, G. Groeseneken, Dirk J. Wouters	2012	50
19	Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells University of Twente Research Information ·David Tio Castro, L. Goux, G.A.M. Hurkx, K. Attenborough, Romain Delhougne, J. G. Lisoni, F. J. Jedema, Micha A. A. in 't Zandt, R.A.M. Wolters, Dirk J. Gravesteijn, Marcel A. Verheijen, M. Kaiser, R.G.R. Weemaes, D. J. Wouters	2007	48
20	Nanoscopic structural rearrangements of the Cu-filament in conductive-bridge memories Nanoscale ·Umberto Celano, Guido Giammaria, L. Goux, Attilio Belmonte, M. Jurczak, W. Vandervorst	2016	47

About L. Goux

L. Goux is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics, Biomedical Engineering and Cellular and Molecular Neuroscience, having authored 149 papers that have together received 3.5k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (101 papers), Ferroelectric and Negative Capacitance Devices (85 papers), Semiconductor materials and devices (73 papers), Ferroelectric and Piezoelectric Materials (31 papers), Transition Metal Oxide Nanomaterials (27 papers), Electronic and Structural Properties of Oxides (22 papers), Phase-change materials and chalcogenides (17 papers) and Acoustic Wave Resonator Technologies (16 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.4k citations), Polymers and Plastics (675 citations), Cellular and Molecular Neuroscience (694 citations), Materials Chemistry (1.1k citations) and Hardware and Architecture (68 citations). L. Goux has collaborated with scholars based in Belgium, France and Italy. Frequent co-authors include M. Jurczak, R. Degraeve, Dirk J. Wouters, A. Fantini, B. Govoreanu, G. Groeseneken, Gouri Sankar Kar, Sergiu Clima, L. Altimime and J. A. Kittl. Their work appears in journals such as Microelectronic Engineering, Applied Physics Letters, Journal of Applied Physics, IEEE Electron Device Letters and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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