S. Denorme

915 citations

21 papers · 183 · h-index 10

Impact in

Electrical and Electronic Engineering
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
Cellular and Molecular Neuroscience
- Neuroscience and Neural Engineering

Papers in

Electrical and Electronic Engineering 21
- Semiconductor materials and devices 14
- Advancements in Semiconductor Devices and Circuit Design 13
- Integrated Circuits and Semiconductor Failure Analysis 7
- Silicon and Solar Cell Technologies 5
- Ferroelectric and Negative Capacitance Devices 4
- Thin-Film Transistor Technologies 3
- Advanced Memory and Neural Computing 3
- Radio Frequency Integrated Circuit Design 2
Atomic and Molecular Physics, and Optics 2

Co-authors: N. Loubet (9 shared papers)T. Skotnicki (11 shared papers)D. Dutartre (4 shared papers)C. Fenouillet-Béranger (6 shared papers)C. Cagli (3 shared papers)D. Mathiot (4 shared papers)S. Monfray (5 shared papers)S. Jeannot (3 shared papers)
Journals: Solid-State Electronics (3 papers)Thin Solid Films (1 paper)IEEE Transactions on Nanotechnology (1 paper)IEEE Transactions on Electron Devices (1 paper)ECS Transactions (2 papers)
Partner nations: France Switzerland United Kingdom

In The Last Decade

S. Denorme

20 papers receiving 180 citations

Peers

Countries citing papers authored by S. Denorme

Since Specialization

Citations

This map shows the geographic impact of S. Denorme's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Denorme with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Denorme more than expected).

Fields of papers citing papers by S. Denorme

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Denorme. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Denorme. The network helps show where S. Denorme may publish in the future.

Co-authors

The 25 scholars most cited alongside S. Denorme, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Denorme Line = papers co-authored together S. Denorme links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 21 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Endurance/Retention Trade Off in HfOx and TaOx Based RRAM M. Azzaz, Elisa Vianello, B. Sklénard, P. Blaise, A. Roule, C. Sabbione, S. Bernasconi, C. Charpin, C. Cagli, E. Jalaguier, S. Jeannot, S. Denorme, P. Candelier, Minrui Yu, Lavinia Nistor, C. Fenouillet-Béranger, L. Perniola	2016	27
2	Selective etching of Si1−xGex versus Si with gaseous HCl for the formation of advanced CMOS devices Thin Solid Films ·N. Loubet, T. Kormann, G. Chabanne, S. Denorme, D. Dutartre	2008	20
3	Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3 Solid-State Electronics ·M. Azzaz, Antoine Benoist, Elisa Vianello, Daniele Garbin, E. Jalaguier, C. Cagli, C. Charpin, S. Bernasconi, S. Jeannot, Tristan Dewolf, G. Audoit, C. Guedj, S. Denorme, P. Candelier, C. Fenouillet-Béranger, L. Perniola	2016	19
4	Gate-all-around technology: Taking advantage of ballistic transport? Solid-State Electronics ·J.-L. Huguenin, G. Bidal, S. Denorme, Dominique Fleury, N. Loubet, A. Pouydebasque, P. Perreau, F. Leverd, S. Barnola, R. Beneyton, B. Orlando, P. Gouraud, T. Salvetat, L. Clement, S. Monfray, G. Ghibaudo, F. Boeuf, T. Skotnicki	2010	18
5	Thin-film devices for low power applications Solid-State Electronics ·S. Monfray, C. Fenouillet-Béranger, G. Bidal, (unknown), S. Denorme, J.-L. Huguenin, Marie-Pierre Samson, N. Loubet, J. M. Hartmann, Y. Campidelli, V. Destefanis, C. Arvet, K. Benotmane, L. Clément, O. Faynot, T. Skotnicki	2009	18
6	Two-dimensional modeling of the enhanced diffusion in thin base n-p-n bipolar transistors after lateral ion implantations IEEE Transactions on Electron Devices ·S. Denorme, D. Mathiot, Philippe Dollfus, M. Mouis	1995	13
7	Benefit of Al<inf>2</inf>O<inf>3</inf>/HfO<inf>2</inf> bilayer for BEOL RRAM integration through 16kb memory cut characterization M. Azzaz, Antoine Benoist, Elisa Vianello, Daniele Garbin, E. Jalaguier, C. Cagli, C. Charpin, S. Bernasconi, S. Jeannot, Tristan Dewolf, G. Audoit, C. Guedj, S. Denorme, P. Candelier, C. Fenouillet-Béranger, L. Perniola	2015	12
8	Silicon MOSFETs as room temperature terahertz detectors Journal of Physics Conference Series ·H. Videlier, S. Nadar, N. Dyakonova, M. Sakowicz, T Trinh Van Dam, F. Teppe, D. Coquillat, W. Knap, S. Denorme, T. Skotnicki, J M Peiris, J. Lyonnet	2009	10
9	Electron beam direct write lithography flexibility for ASIC manufacturing: an opportunity for cost reduction (Keynote Paper) Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·L. Pain, M. Jurdit, J. Todeschini, S. Manakli, B. Icard, Blandine Minghetti, G. Bervin, Alessio Beverina, F. Leverd, M. Broekaart, P. Gouraud, Veronique De Jonghe, P. Brun, S. Denorme, (unknown), V. Wang, Daniel Henry	2005	10
10	High-Performance High-$K$/Metal Planar Self-Aligned Gate-All-Around CMOS Devices IEEE Transactions on Nanotechnology ·A. Pouydebasque, S. Denorme, N. Loubet, R. Wacquez, J. Bustos, F. Leverd, E. Deloffre, S. Barnola, D. Dutartre, P. Coronel, T. Skotnicki	2008	9
11	Silicon-On-Nothing (SON) applications for Low Power technologies S. Monfray, (unknown), P. Coronel, G. Bidal, S. Denorme, T. Skotnicki	2008	8
12	Accurate two-dimensional modelling of the titanium silicide process with an application to a thin base n-p-n bipolar transistor Microelectronics Journal ·P. Fornara, S. Denorme, E. de Berranger, D. Mathiot, M. Mouis, A. Poncet	1998	3
13	Si1-xGex/Si Selective Etch with HCl for Thin Si-Channel Transistors Integration N. Loubet, S. Denorme, A. Pouydebasque, F. Leverd, P. Gouraud, C. Tallaron, T. Skotnicki, D. Dutartre	2007	3
14	Ultra Compact FDSOI Transistors including Strain and Orientation: Processing and Performance ECS Transactions ·C. Fenouillet-Béranger, Loan Pham-Nguyen, P. Perreau, S. Denorme, F. Andrieu, Olivier Faynot, L. Tosti, L. Brévard, C. Buj, O. Weber, C. Gallon, Vincent Fiori, F. Bœuf, S. Cristoloveanu, T. Skotnicki	2009	2
15	Physical modelling of the enhanced diffusion of boron due to ion implantation in thin-base npn bipolar transistors Microelectronics Journal ·M. Mouis, H.J. Gregory, S. Denorme, D. Mathiot, P. Ashburn, David J. Robbins, J. L. Glasper	1995	2
16	Physical Modeling of the Enhanced Diffusion of Boron Due to Ion Implantation in Thin Base npn Bipolar Transistors ePrints Soton (University of Southampton) ·M. Mouis, H.J. Gregory, S. Denorme, D. Mathiot, P. Ashburn, David J. Robbins, J. L. Glasper	1993	2
17	Gate-All-Around technology: taking advantage of ballistic transport ? G. Bidal, J.-L. Huguenin, S. Denorme, Dominique Fleury, N. Loubet, A. Pouydebasque, P. Perreau, F. Leverd, S. Barnola, (unknown), B. Orlando, P. Gouraud, T. Salvetat, L. Clement, (unknown), G. Ghibaudo, (unknown), T. Skotnicki	2009	2
18	Optimization of Bulk⁺/SON Integration for Low Stand-by Power (LstP) Applications (unknown), G. Bidal, S. Denorme, J.-L. Huguenin, S. Monfray, D. Chanemougame, N. Loubet, T. Skotnicki	2009	2
19	Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications J.-L. Huguenin, (unknown), G. Bidal, S. Denorme, P. Perreau, N. Loubet, Y. Campidelli, (unknown), C. Arvet, K. Benotmane, F. Leverd, P. Gouraud, Bertrand Le-Gratiet, C. De-Butet, L. Pinzelli, (unknown), S. Barnola, Thomas Morel, A. Halimaoui, (unknown), G. Ghibaudo, T. Skotnicki	2010	2
20	Si/SiGe Epitaxy and Selective Etch Applications for Advanced Thin-Films MOSFET Structures ECS Transactions ·N. Loubet, F. Bœuf, S. Monfray, C. Fenouillet-Béranger, S. Denorme, G. Bidal, T. Skotnicki, D. Dutartre	2008	1

About S. Denorme

S. Denorme is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Bioengineering, Biomedical Engineering and Materials Chemistry, having authored 21 papers that have together received 183 indexed citations. Recurring topics across this work include Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Silicon and Solar Cell Technologies (5 papers), Ferroelectric and Negative Capacitance Devices (4 papers), Thin-Film Transistor Technologies (3 papers), Advanced Memory and Neural Computing (3 papers) and Radio Frequency Integrated Circuit Design (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (181 citations), Cellular and Molecular Neuroscience (21 citations), Biomedical Engineering (36 citations), Atomic and Molecular Physics, and Optics (17 citations) and Polymers and Plastics (6 citations). S. Denorme has collaborated with scholars based in France, Switzerland and United Kingdom. Frequent co-authors include N. Loubet, T. Skotnicki, D. Dutartre, C. Fenouillet-Béranger, C. Cagli, D. Mathiot, S. Monfray, S. Jeannot, L. Perniola and E. Jalaguier. Their work appears in journals such as Solid-State Electronics, Thin Solid Films, IEEE Transactions on Nanotechnology, IEEE Transactions on Electron Devices and ECS Transactions.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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S. Denorme

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