P. Blaise

1.6k citations

60 papers · 1.0k · h-index 19

Impact in

Electrical and Electronic Engineering top 5%
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
Cellular and Molecular Neuroscience top 10%
- Neuroscience and Neural Engineering

Papers in

Electrical and Electronic Engineering 52
- Advanced Memory and Neural Computing 40
- Semiconductor materials and devices 39
- Ferroelectric and Negative Capacitance Devices 31
- Advancements in Semiconductor Devices and Circuit Design 7
- Silicon Carbide Semiconductor Technologies 2
Materials Chemistry 17
- Electronic and Structural Properties of Oxides 13

Co-authors: Yoshio Nishi (10 shared papers)Elisa Vianello (26 shared papers)Boubacar Traoré (16 shared papers)B. De Salvo (23 shared papers)L. Perniola (18 shared papers)G. Molas (28 shared papers)L. R. C. Fonseca (9 shared papers)Kan‐Hao Xue (7 shared papers)
Journals: IEEE Transactions on Electron Devices (7 papers)Applied Physics Letters (4 papers)Physical Review Letters (2 papers)Physical review. B, Condensed matter (2 papers)Microelectronic Engineering (1 paper)
Partner nations: France United States Brazil

In The Last Decade

P. Blaise

58 papers receiving 1.0k citations

Peers

Countries citing papers authored by P. Blaise

Since Specialization

Citations

This map shows the geographic impact of P. Blaise's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Blaise with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Blaise more than expected).

Fields of papers citing papers by P. Blaise

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Blaise. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Blaise. The network helps show where P. Blaise may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Blaise, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Blaise Line = papers co-authored together P. Blaise links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 60 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	HfO<sub>2</sub>-Based RRAM: Electrode Effects, Ti/HfO<sub>2</sub> Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and <italic>Ab Initio</italic> Calculations IEEE Transactions on Electron Devices ·Boubacar Traoré, P. Blaise, Elisa Vianello, L. Perniola, B. De Salvo, Yoshio Nishi	2015	88
2	Prediction of Semimetallic TetragonalHf2O3andZr2O3from First Principles Physical Review Letters ·Kan‐Hao Xue, P. Blaise, L. R. C. Fonseca, Yoshio Nishi	2013	79
3	On the Origin of Low-Resistance State Retention Failure in HfO₂-Based RRAM and Impact of Doping/Alloying IEEE Transactions on Electron Devices ·Boubacar Traoré, P. Blaise, Elisa Vianello, H. Grampeix, S. Jeannot, L. Perniola, B. De Salvo, Yoshio Nishi	2015	78
4	Grain boundary composition and conduction in HfO2: An ab initio study Applied Physics Letters ·Kan‐Hao Xue, P. Blaise, L. R. C. Fonseca, G. Molas, Elisa Vianello, Boubacar Traoré, B. De Salvo, G. Ghibaudo, Yoshio Nishi	2013	59
5	A Combined <italic>Ab Initio</italic> and Experimental Study on the Nature of Conductive Filaments in <inline-formula> <tex-math notation="TeX">${\rm Pt}/{\rm Hf}{\rm O}_{2}/{\rm Pt}$ </tex-math></inline-formula> Resistive Random Access Memory IEEE Transactions on Electron Devices ·Kan‐Hao Xue, Boubacar Traoré, P. Blaise, L. R. C. Fonseca, Elisa Vianello, G. Molas, B. De Salvo, Gérard Ghibaudo, Blanka Magyari-Köpe, Yoshio Nishi	2014	56
6	Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization IEEE Transactions on Electron Devices ·Jérémy Guy, G. Molas, P. Blaise, M. Bernard, Anne Roule, G. Le Carval, V. Delaye, A. Toffoli, G. Ghibaudo, Fabien Clermidy, B. De Salvo, L. Perniola	2015	45
7	Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling IEEE Transactions on Electron Devices ·Elisa Vianello, F. Driussi, P. Blaise, Pierpaolo Palestri, David Esseni, L. Perniola, G. Molas, B. De Salvo, L. Selmi	2011	45
8	Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: Coupling of Oxygen Vacancies and Metal Ions Advanced Electronic Materials ·Gilbert Sassine, Cécile Nail, P. Blaise, B. Sklénard, M. Bernard, R. Gassilloud, Aurélie Marty, M. Veillerot, C. Vallée, E. Nowak, G. Molas	2018	41
9	Controlling oxygen vacancies in doped oxide based CBRAM for improved memory performances G. Molas, Elisa Vianello, F. Dahmani, Marinela Barci, P. Blaise, J. Guy, A. Toffoli, M. Bernard, A. Roule, (unknown), Christophe Licitra, B. De Salvo, L. Perniola	2014	33
10	Excitation and fragmentation of highly charged metal clusters in collisions with ions Zeitschrift für Physik D Atoms Molecules and Clusters ·C. Guet, X. Biquard, P. Blaise, S. A. Blundell, M. Groß, Bernd Huber, D. Jalabert, M. Maurel, Laurent Plagne, J.C. Rocco	1997	32
11	Extended Thomas-Fermi molecular dynamics of sodium clusters Physical review. B, Condensed matter ·P. Blaise, S. A. Blundell, C. Guet	1997	32
12	HfO₂/Ti Interface Mediated Conductive Filament Formation in RRAM: An <italic>Ab Initio</italic> Study IEEE Transactions on Electron Devices ·Boubacar Traoré, P. Blaise, B. Sklénard, Elisa Vianello, Blanka Magyari-Köpe, Yoshio Nishi	2018	30
13	Microscopic understanding of the low resistance state retention in HfO<inf>2</inf> and HfAlO based RRAM Boubacar Traoré, P. Blaise, Elisa Vianello, H. Grampeix, A. Bonnevialle, E. Jalaguier, G. Molas, S. Jeannot, L. Perniola, B. DeSalvo, Yoshio Nishi	2014	30
14	(Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions ECS Transactions ·G. Molas, Gilbert Sassine, Cécile Nail, Diego Alfaro Robayo, Jean-François Nodin, C. Cagli, J. Coignus, P. Blaise, E. Nowak	2018	27
15	Endurance/Retention Trade Off in HfOx and TaOx Based RRAM M. Azzaz, Elisa Vianello, B. Sklénard, P. Blaise, A. Roule, C. Sabbione, S. Bernasconi, C. Charpin, C. Cagli, E. Jalaguier, S. Jeannot, S. Denorme, P. Candelier, Minrui Yu, Lavinia Nistor, C. Fenouillet-Béranger, L. Perniola	2016	27
16	Reduction of Monoclinic HfO₂: A Cascading Migration of Oxygen and Its Interplay with a High Electric Field The Journal of Physical Chemistry C ·Boubacar Traoré, P. Blaise, B. Sklénard	2016	26
17	Ab initio calculation of effective work functions for a TiN/HfO2/SiO2/Si transistor stack Applied Physics Letters ·Pierre-Yves Prodhomme, Fabien Fontaine‐Vive, Abram Van Der Geest, P. Blaise, Jacky Even	2011	23
18	New insight on the charge trapping mechanisms of SiN-based memory by atomistic simulations and electrical modeling Institutional Research Information System (University of Udine) ·Elisa Vianello, L. Perniola, P. Blaise, G. Molas, J. P. Colonna, F. Driussi, Pierpaolo Palestri, David Esseni, L. Selmi, N. Rochat, Christophe Licitra, D. Lafond, R. Kies, G. Reimbold, B. De Salvo, F. Boulanger	2009	22
19	On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories Solid-State Electronics ·F. Longnos, Elisa Vianello, C. Cagli, G. Molas, E. Souchier, P. Blaise, C. Carabasse, G. Rodriguez, V. Jousseaume, B. De Salvo, F. Dahmani, P. Verrier, D. Bretegnier, J. Liébault	2013	21
20	Charge-Induced Fragmentation of Sodium Clusters Physical Review Letters ·P. Blaise, S. A. Blundell, C. Guet, Rajendra R. Zope	2001	18

About P. Blaise

P. Blaise is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Polymers and Plastics and Computational Mechanics, having authored 60 papers that have together received 1.0k indexed citations. Recurring topics across this work include Advanced Memory and Neural Computing (40 papers), Semiconductor materials and devices (39 papers), Ferroelectric and Negative Capacitance Devices (31 papers), Electronic and Structural Properties of Oxides (13 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Advanced Chemical Physics Studies (3 papers), Atomic and Molecular Physics (3 papers) and Silicon Carbide Semiconductor Technologies (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (918 citations), Cellular and Molecular Neuroscience (153 citations), Polymers and Plastics (107 citations), Materials Chemistry (326 citations) and Atomic and Molecular Physics, and Optics (116 citations). P. Blaise has collaborated with scholars based in France, United States and Brazil. Frequent co-authors include Yoshio Nishi, Elisa Vianello, Boubacar Traoré, B. De Salvo, L. Perniola, G. Molas, L. R. C. Fonseca, Kan‐Hao Xue, S. A. Blundell and B. Sklénard. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, Physical Review Letters, Physical review. B, Condensed matter and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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