B. E. Weir

4.8k citations

97 papers · 3.8k · 2 hit papers · h-index 31

Impact in

Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic and Optical Devices
- Silicon and Solar Cell Technologies
Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 90
- Semiconductor materials and devices 57
- Advancements in Semiconductor Devices and Circuit Design 35
- Integrated Circuits and Semiconductor Failure Analysis 21
- Silicon and Solar Cell Technologies 16
- Photonic and Optical Devices 15
- Semiconductor Lasers and Optical Devices 12
Atomic and Molecular Physics, and Optics 41
- Semiconductor materials and interfaces 26
- Semiconductor Quantum Structures and Devices 18

Co-authors: P. J. Silvėrman (27 shared papers)Eugene A. Fitzgerald (11 shared papers)A. R. Kortan (4 shared papers)Y. J. Mii (4 shared papers)Y. H. Xie (3 shared papers)Md Ashraful Alam (12 shared papers)D. Monroe (15 shared papers)L. C. Feldman (21 shared papers)
Journals: Applied Physics Letters (16 papers)Journal of Applied Physics (8 papers)Electronics Letters (5 papers)Microelectronic Engineering (4 papers)Journal of Crystal Growth (3 papers)
Partner nations: United States Germany Taiwan

In The Last Decade

B. E. Weir

95 papers receiving 3.5k citations

B. E. Weir's Hit Papers

align trajectories log scale

Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si 1992 · 460 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

1992 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
1991 Applied Physics Letters

Peers

Countries citing papers authored by B. E. Weir

Since Specialization

Citations

This map shows the geographic impact of B. E. Weir's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. E. Weir with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. E. Weir more than expected).

Fields of papers citing papers by B. E. Weir

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. E. Weir. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. E. Weir. The network helps show where B. E. Weir may publish in the future.

Co-authors

The 25 scholars most cited alongside B. E. Weir, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. E. Weir Line = papers co-authored together B. E. Weir links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 97 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates Applied Physics Letters ·Eugene A. Fitzgerald, Y. H. Xie, M. L. Green, D. Brasen, A. R. Kortan, Jürgen Michel, Y. J. Mii, B. E. Weir Hit paper breakdown →	1991	591
2	Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Eugene A. Fitzgerald, Ya‐Hong Xie, D. Monroe, P. J. Silvėrman, J. M. Kuo, A. R. Kortan, (unknown), B. E. Weir Hit paper breakdown →	1992	460
3	Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy Applied Physics Letters ·Y. J. Mii, Y. H. Xie, Eugene A. Fitzgerald, Don Monroe, (unknown), B. E. Weir, L. C. Feldman	1991	217
4	Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors IEEE Journal of Quantum Electronics ·G. Hasnain, K. Tai, Long Yang, Y.H. Wang, R. Fischer, J. D. Wynn, B. E. Weir, Niloy K. Dutta, A.Y. Cho	1991	163
5	Ultra-thin gate dielectrics: they break down, but do they fail? B. E. Weir, P. J. Silvėrman, D. Monroe, K.S. Krisch, Muhammad A. Alam, G. B. Alers, T. Sorsch, G. Timp, F.H. Baumann, C.T. Liu, Yubin Ma, D. Hwang	2002	128
6	Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy Journal of Applied Physics ·Jane P. Chang, M. L. Green, Vincent M. Donnelly, R. L. Opila, Joseph Eng, J. Sapjeta, P. J. Silvėrman, B. E. Weir, Hongcheng Lu, T. Gustafsson, Eric Garfunkel	2000	117
7	Precursor ion damage and angular dependence of single event gate rupture in thin oxides IEEE Transactions on Nuclear Science ·F.W. Sexton, Daniel M. Fleetwood, M.R. Shaneyfelt, P.E. Dodd, G.L. Hash, L.P. Schanwald, R.A. Loemker, K.S. Krisch, M.L. Green, B. E. Weir, P. J. Silvėrman	1998	115
8	Absorption and luminescence studies of free-standing porous silicon films Physical review. B, Condensed matter ·Ya Xie, Mark S. Hybertsen, William L. Wilson, S. A. Ipri, Gary E. Carver, W. L. Brown, Edwin Dons, B. E. Weir, A. R. Kortan, G. P. Watson, Adam J. Liddle	1994	100
9	A study of soft and hard breakdown - Part I: Analysis of statistical percolation conductance IEEE Transactions on Electron Devices ·Md Ashraful Alam, B. E. Weir, P. J. Silvėrman	2002	81
10	Gate oxide reliability projection to the sub-2 nm regime Semiconductor Science and Technology ·B. E. Weir, Md Ashraful Alam, J. Bude, P. J. Silvėrman, A. Ghetti, F.H. Baumann, P.W. Diodato, D. Monroe, T. Sorsch, G. Timp, Y. Ma, M.M. Brown, Abdullah Hamad, D. Hwang, Philip E. Mason	2000	72
11	Explanation of stress-induced damage in thin oxides D.J. Bude, B. E. Weir, P. J. Silvėrman	2002	66
12	90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 µm diameter core silica fibre Electronics Letters ·K. Tai, G. Hasnain, J. D. Wynn, R. Fischer, Y.H. Wang, B. E. Weir, John Gamelin, A. Y. Cho	1990	62
13	Influence of surface reconstruction on the orientation of homoepitaxial silicon films Physical Review Letters ·Randall L. Headrick, B. E. Weir, J. Bevk, B. S. Freer, D. J. Eaglesham, L. C. Feldman	1990	62
14	A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling IEEE Transactions on Electron Devices ·Md Ashraful Alam, B. E. Weir, P. J. Silvėrman	2002	60
15	Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C Journal of Applied Physics ·M. L. Green, B. E. Weir, D. Brasen, Y. F. Hsieh, G. S. Higashi, A. Feygenson, L. C. Feldman, Randall L. Headrick	1991	58
16	Understanding the limits of ultrathin SiO2 and SiON gate dielectrics for sub-50 nm CMOS Microelectronic Engineering ·M. L. Green, T. Sorsch, G. Timp, David A. Muller, B. E. Weir, P. J. Silvėrman, S. Moccio, Y. O. Kim	1999	58
17	Uncorrelated breakdown of integrated circuits Nature ·Md Ashraful Alam, R.K. Smith, B. E. Weir, P. J. Silvėrman	2002	57
18	Low-temperature homoepitaxy on Si(111) Applied Physics Letters ·B. E. Weir, B. S. Freer, Randall L. Headrick, D. J. Eaglesham, George H. Gilmer, J. Bevk, L. C. Feldman	1991	50
19	MBE growth and properties of Fe3(Al,Si) on GaAs(100) Journal of Crystal Growth ·M. Hong, H. S. Chen, J. Kwo, A. R. Kortan, J. P. Mannáerts, B. E. Weir, L. C. Feldman	1991	50
20	Si(100)-(2×1)boron reconstruction: Self-limiting monolayer doping Applied Physics Letters ·Randall L. Headrick, B. E. Weir, A. F. J. Levi, D. J. Eaglesham, L. C. Feldman	1990	49

About B. E. Weir

B. E. Weir is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Surfaces, Coatings and Films, having authored 97 papers that have together received 3.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (57 papers), Advancements in Semiconductor Devices and Circuit Design (35 papers), Semiconductor materials and interfaces (26 papers), Integrated Circuits and Semiconductor Failure Analysis (21 papers), Semiconductor Quantum Structures and Devices (18 papers), Silicon and Solar Cell Technologies (16 papers), Photonic and Optical Devices (15 papers) and Semiconductor Lasers and Optical Devices (12 papers). The work is most often cited by research in Electrical and Electronic Engineering (3.3k citations), Atomic and Molecular Physics, and Optics (1.7k citations), Materials Chemistry (838 citations), Surfaces, Coatings and Films (108 citations) and Structural Biology (20 citations). B. E. Weir has collaborated with scholars based in United States, Germany and Taiwan. Frequent co-authors include P. J. Silvėrman, Eugene A. Fitzgerald, A. R. Kortan, Y. J. Mii, Y. H. Xie, Md Ashraful Alam, D. Monroe, L. C. Feldman, D. Brasen and Jürgen Michel. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Electronics Letters, Microelectronic Engineering and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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