Wayne J. Johnson

1.4k citations

59 papers · 1.2k · h-index 19

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
- Physics of Superconductivity and Magnetism
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 37
- GaN-based semiconductor devices and materials 33
Electronic, Optical and Magnetic Materials 21
- Ga2O3 and related materials 18

Co-authors: Yu Cao (18 shared papers)Huili Grace Xing (11 shared papers)Oleg A. Laboutin (24 shared papers)Debdeep Jena (9 shared papers)Alwyn C. Scott (1 shared paper)A. Barone (2 shared papers)Zongyang Hu (7 shared papers)Patrick Fay (10 shared papers)
Journals: Applied Physics Letters (7 papers)IEEE Electron Device Letters (5 papers)IEEE Transactions on Vehicular Technology (4 papers)Journal of Applied Physics (4 papers)Applied Physics Express (3 papers)
Partner nations: United States United Kingdom Japan

In The Last Decade

Wayne J. Johnson

57 papers receiving 1.1k citations

Peers

Countries citing papers authored by Wayne J. Johnson

Since Specialization

Citations

This map shows the geographic impact of Wayne J. Johnson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Wayne J. Johnson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Wayne J. Johnson more than expected).

Fields of papers citing papers by Wayne J. Johnson

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Wayne J. Johnson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Wayne J. Johnson. The network helps show where Wayne J. Johnson may publish in the future.

Co-authors

The 25 scholars most cited alongside Wayne J. Johnson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Wayne J. Johnson Line = papers co-authored together Wayne J. Johnson links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 59 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon IEEE Electron Device Letters ·Mingda Zhu, Bo Song, Meng Qi, Zongyang Hu, Kazuki Nomoto, Xiaodong Yan, Yu Cao, Wayne J. Johnson	2015	168
2	210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation IEEE Electron Device Letters ·Ronghua Wang, Guowang Li, Oleg A. Laboutin, Yu Cao, Wayne J. Johnson, Gregory L. Snider, Patrick Fay, Debdeep Jena	2011	93
3	Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors Applied Physics Letters ·Hung-Ta Wang, B. S. Kang, TJ Chancellor, Tanmay P. Lele, Yu‐Chih Tseng, Fan Ren, Stephen Pearton, Wayne J. Johnson	2007	87
4	Thermal Boundary Resistance in GaN Films Measured by Time Domain Thermoreflectance with Robust Monte Carlo Uncertainty Estimation Nanoscale and Microscale Thermophysical Engineering ·Thomas L. Bougher, Luke Yates, Chien-Fong Lo, Wayne J. Johnson, Samuel Lindsay Graham, Baratunde A. Cola	2016	79
5	220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs IEEE Electron Device Letters ·Ronghua Wang, Guowang Li, Jai Kishan Verma, Berardi Sensale‐Rodriguez, Fang Tian, Jia Guo, Zongyang Hu, Oleg A. Laboutin	2011	74
6	INTERNAL FLUX MOTION IN LARGE JOSEPHSON JUNCTIONS Applied Physics Letters ·Alwyn C. Scott, Wayne J. Johnson	1969	67
7	Quaternary Barrier InAlGaN HEMTs With $f_{T}/f_{\max}$ of 230/300 GHz IEEE Electron Device Letters ·Ronghua Wang, Guowang Li, Golnaz Karbasian, Jia Guo, Bo Song, Yuanzheng Yue, Zongyang Hu, Oleg A. Laboutin	2013	65
8	Current flow in large Josephson junctions Journal of Applied Physics ·A. Barone, Wayne J. Johnson, R. Vaglio	1975	47
9	InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition Applied Physics Letters ·Oleg A. Laboutin, Yu Cao, Wayne J. Johnson, R. Wang, G. Li, D. Jena, Huili Grace Xing	2012	41
10	Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs IEEE Electron Device Letters ·Dong Seup Lee, Oleg A. Laboutin, Yu Cao, Wayne J. Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier	2012	39
11	InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier andfT/fmaxof 260/220 GHz Applied Physics Express ·Ronghua Wang, Guowang Li, Golnaz Karbasian, Jia Guo, Faiza Faria, Zongyang Hu, Yuanzheng Yue, Jai Kishan Verma	2013	39
12	Silicon carbide integrated circuits for extreme environments Avinash S. Kashyap, Cheng-Po Chen, Reza Ghandi, Amita C. Patil, Emad Andarawis, Liang Yin, Dave Shaddock, Peter Sandvik	2013	32
13	Advantages and limitations of MgO as a dielectric for GaN Solid-State Electronics ·J. Kim, B. Luo, A. Onstine, Wayne J. Johnson, Fan Ren, C. R. Abernathy, Stephen Pearton +1 other	2003	31
14	Effect of Junction Geometry on Maximum Zero-Voltage Josephson Current Journal of Applied Physics ·Wayne J. Johnson, A. Barone	1970	29
15	Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Lu Liu, Tsung Sheng Kang, David A. Cullen, Lin Zhou, Jin-Hyung Kim, Chih-Yang Chang, E Douglas, Soohwan Jang	2011	26
16	Active flywheel control based on the method of moment restrictions Sergei V. Gusev, Wayne J. Johnson, John M. Miller	1997	25
17	317 GHz InAlGaN/GaN HEMTs with extremely low on‐resistance Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Dong Seup Lee, Oleg A. Laboutin, Yu Cao, Wayne J. Johnson, Edward Beam, A. Ketterson, Michael L. Schuette, P. Saunier	2013	20
18	Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors Electrochemical and Solid-State Letters ·Chien-Fong Lo, Lu Liu, Tsung-Sheng Kang, Ryan P. Davies, Stephen Pearton, Ivan I. Kravchenko, Oleg A. Laboutin, Yu Cao	2011	20
19	Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam Applied Physics Letters ·Akira Uedono, Tatsuya Fujishima, Yu Cao, Yang Zhang, Nakaaki Yoshihara, Shoji Ishibashi, Masatomo Sumiya, Oleg A. Laboutin	2014	19
20	Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors Materials Science and Engineering A ·S. N. G. Chu, Fan Ren, Stephen Pearton, B. S. Kang, Seong Hun Kim, C. R. Abernathy, J.‐I. Chyi, Wayne J. Johnson	2005	19

About Wayne J. Johnson

Wayne J. Johnson is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Fluid Flow and Transfer Processes, having authored 59 papers that have together received 1.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (33 papers), Semiconductor materials and devices (19 papers), Ga2O3 and related materials (18 papers), Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor Quantum Structures and Devices (8 papers), Radio Frequency Integrated Circuit Design (6 papers), Combustion and Detonation Processes (4 papers) and ZnO doping and properties (4 papers). The work is most often cited by research in Condensed Matter Physics (865 citations), Electronic, Optical and Magnetic Materials (419 citations), Electrical and Electronic Engineering (699 citations), Atomic and Molecular Physics, and Optics (305 citations) and Materials Chemistry (273 citations). Wayne J. Johnson has collaborated with scholars based in United States, United Kingdom and Japan. Frequent co-authors include Yu Cao, Huili Grace Xing, Oleg A. Laboutin, Debdeep Jena, Alwyn C. Scott, A. Barone, Zongyang Hu, Patrick Fay, Ronghua Wang and Gregory L. Snider. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, IEEE Transactions on Vehicular Technology, Journal of Applied Physics and Applied Physics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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