N. Baron

590 citations

26 papers · 500 · h-index 14

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 24
- GaN-based semiconductor devices and materials 23
Electrical and Electronic Engineering 24
- Semiconductor materials and devices 20
- Advancements in Semiconductor Devices and Circuit Design 5
- Silicon Carbide Semiconductor Technologies 4

Co-authors: Y. Cordier (25 shared papers)Sébastien Chenot (21 shared papers)J. C. Moreno (16 shared papers)Amador Pérez‐Tomás (13 shared papers)Marcel Placidi (13 shared papers)A. Fontserè (11 shared papers)F. Sèmond (7 shared papers)O. Tottereau (4 shared papers)
Journals: Journal of Crystal Growth (5 papers)Applied Physics Letters (4 papers)Journal of Applied Physics (3 papers)Semiconductor Science and Technology (1 paper)Microelectronic Engineering (1 paper)
Partner nations: France Spain United Kingdom

In The Last Decade

N. Baron

26 papers receiving 486 citations

Peers

Countries citing papers authored by N. Baron

Since Specialization

Citations

This map shows the geographic impact of N. Baron's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Baron with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Baron more than expected).

Fields of papers citing papers by N. Baron

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Baron. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Baron. The network helps show where N. Baron may publish in the future.

Co-authors

The 25 scholars most cited alongside N. Baron, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N. Baron Line = papers co-authored together N. Baron links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	GaN transistor characteristics at elevated temperatures Journal of Applied Physics ·Amador Pérez‐Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, A. Constant, Philippe Godignon, José del R. Millán	2009	72
2	Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates Journal of Applied Physics ·Amador Pérez‐Tomás, A. Fontserè, Jordi Llobet, Marcel Placidi, S. Rennesson, N. Baron, Sébastien Chenot, J. C. Moreno, Y. Cordier	2013	58
3	The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111) Journal of Applied Physics ·N. Baron, Y. Cordier, Sébastien Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Sèmond, J. Massies	2009	49
4	Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN Applied Physics Letters ·A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, Jordi Llobet, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, Peter Michael Gammon, Michael R. Jennings, M. Porti, A. Bayerl, Mario Lanza, M. Nafrı́a	2011	46
5	AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination Journal of Crystal Growth ·Y. Cordier, M. Azize, N. Baron, Sébastien Chenot, O. Tottereau, J. Massies	2007	26
6	High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·R. Cuerdo, F. Calle, Alejandro F. Braña, Y. Cordier, M. Azize, N. Baron, Sébastien Chenot, E. Muñoz	2008	25
7	Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET Microelectronic Engineering ·A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, P. Fernandéz Martinéz, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, Peter Michael Gammon, Michael R. Jennings	2011	25
8	Growth of GaN based structures on Si(110) by molecular beam epitaxy Journal of Crystal Growth ·Y. Cordier, J. C. Moreno, N. Baron, Éric Frayssinet, J.‐M. Chauveau, M. Némoz, Sébastien Chenot, B. Damilano, F. Sèmond	2010	24
9	Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance Semiconductor Science and Technology ·Amador Pérez‐Tomás, A. Fontserè, Marcel Placidi, N. Baron, Sébastien Chenot, J. C. Moreno, Y. Cordier	2012	21
10	Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature Journal of Crystal Growth ·Y. Cordier, N. Baron, Sébastien Chenot, P. Vennéguès, O. Tottereau, M. Leroux, F. Sèmond, J. Massies	2008	20
11	Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale Applied Physics Letters ·A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, Jordi Llobet, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, V. Iglesias, M. Porti, A. Bayerl, Mario Lanza, M. Nafrı́a	2012	17
12	In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy Journal of Crystal Growth ·Y. Cordier, N. Baron, F. Sèmond, J. Massies, Marcello Binetti, B. Henninger, M. Besendahl, T. Zettler	2007	16
13	Investigation of AlGaN∕AlN∕GaN heterostructures for magnetic sensor application from liquid helium temperature to 300°C Applied Physics Letters ·L. Bouguen, Sylvie Contreras, B. Jouault, L. Kończewicz, J. Camassel, Y. Cordier, M. Azize, Sébastien Chenot, N. Baron	2008	14
14	Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures Journal of Crystal Growth ·Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, Sébastien Chenot, O. Tottereau, J. Massies, P. Gibart	2007	13
15	AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001) Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Y. Cordier, J. C. Moreno, N. Baron, Éric Frayssinet, Sébastien Chenot, B. Damilano, F. Sèmond	2009	13
16	Bulk Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN ECS Solid State Letters ·A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, J. C. Moreno, Y. Cordier	2012	12
17	Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors Nanotechnology ·A. Fontserè, Amador Pérez‐Tomás, Marcel Placidi, Jordi Llobet, N. Baron, Sébastien Chenot, Y. Cordier, J. C. Moreno, Michael R. Jennings, Peter Michael Gammon, Craig A. Fisher, V. Iglesias, M. Porti, A. Bayerl, Mario Lanza, M. Nafrı́a	2012	12
18	Vapor pressure over conguently melting crystal hydrates and their solutions Journal of Structural Chemistry ·V. P. Mashovets, N. Baron, G. E. Zavodnaya	1966	7
19	Evaluation of SiN films for AlGaN/GaN MIS‐HEMTs on Si(111) Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, Mario El Kazzi, Philippe Régreny, G. Hollinger, Marie‐Paule Besland	2009	7
20	Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration physica status solidi (a) ·P. Chyurlia, F. Sèmond, T. Lester, J. A. Bardwell, S. Rolfe, Y. Cordier, N. Baron, J. C. Moreno, N. G. Tarr	2009	5

About N. Baron

N. Baron is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 26 papers that have together received 500 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (20 papers), Ga2O3 and related materials (5 papers), Metal and Thin Film Mechanics (5 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers), Semiconductor Quantum Structures and Devices (4 papers), Silicon Carbide Semiconductor Technologies (4 papers) and Nanowire Synthesis and Applications (2 papers). The work is most often cited by research in Condensed Matter Physics (429 citations), Electronic, Optical and Magnetic Materials (189 citations), Electrical and Electronic Engineering (352 citations), Mechanics of Materials (81 citations) and Atomic and Molecular Physics, and Optics (92 citations). N. Baron has collaborated with scholars based in France, Spain and United Kingdom. Frequent co-authors include Y. Cordier, Sébastien Chenot, J. C. Moreno, Amador Pérez‐Tomás, Marcel Placidi, A. Fontserè, F. Sèmond, O. Tottereau, Jordi Llobet and J. Massies. Their work appears in journals such as Journal of Crystal Growth, Applied Physics Letters, Journal of Applied Physics, Semiconductor Science and Technology and Microelectronic Engineering.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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N. Baron

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