S. Rolfe

774 citations

52 papers · 639 · h-index 13

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 43
- Semiconductor materials and devices 29
- Thin-Film Transistor Technologies 7
- Advanced Semiconductor Detectors and Materials 6
Atomic and Molecular Physics, and Optics 23
- Semiconductor Quantum Structures and Devices 17
- Semiconductor materials and interfaces 7

Co-authors: J. A. Bardwell (21 shared papers)H. Tang (17 shared papers)J. B. Webb (3 shared papers)J. B. Webb (10 shared papers)J.‐M. Baribeau (8 shared papers)S. Moisa (7 shared papers)J. Fraser (4 shared papers)S. Haffouz (3 shared papers)
Journals: Applied Physics Letters (8 papers)Journal of Crystal Growth (6 papers)Thin Solid Films (5 papers)Journal of Applied Physics (2 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)
Partner nations: Canada United States France

In The Last Decade

S. Rolfe

51 papers receiving 609 citations

Peers

Countries citing papers authored by S. Rolfe

Since Specialization

Citations

This map shows the geographic impact of S. Rolfe's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Rolfe with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Rolfe more than expected).

Fields of papers citing papers by S. Rolfe

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Rolfe. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Rolfe. The network helps show where S. Rolfe may publish in the future.

Co-authors

The 25 scholars most cited alongside S. Rolfe, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Rolfe Line = papers co-authored together S. Rolfe links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 52 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy Applied Physics Letters ·J. B. Webb, H. Tang, S. Rolfe, J. A. Bardwell	1999	139
2	A simple wet etch for GaN Journal of Electronic Materials ·J. A. Bardwell, Ian G. Foulds, J. B. Webb, H. Tang, J. Fraser, S. Moisa, S. Rolfe	1999	40
3	Characterization of boron-doped silicon epitaxial layers by x-ray diffraction Applied Physics Letters ·J.‐M. Baribeau, S. Rolfe	1991	32
4	Characterization of Si1−xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·H. Lafontaine, D. C. Houghton, D. Elliot, N. L. Rowell, J.‐M. Baribeau, S. R. Laframboise, G. I. Sproule, S. Rolfe	1996	32
5	AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy Solid-State Electronics ·S. Haffouz, H. Tang, J. A. Bardwell, E. M. Hsu, J. B. Webb, S. Rolfe	2005	30
6	Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy Journal of Applied Physics ·H. Tang, Z.-Q. Fang, S. Rolfe, J. A. Bardwell, S. Raymond	2010	24
7	AlGaN/GaN HFET devices on SiC grown by ammonia-MBE with high f _T and f _MAX Electronics Letters ·J. A. Bardwell, Y. Liu, H. Tang, J. B. Webb, S. Rolfe, J. Lapointe	2003	24
8	Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates Electronics Letters ·P. Chyurlia, F. Sèmond, T. Lester, J. A. Bardwell, S. Rolfe, H. Tang, N. G. Tarr	2010	23
9	Fabrication of high performance GaN modulation doped field effect transistors Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·J. A. Bardwell, Ian G. Foulds, B. Lamontagne, H. Tang, J. B. Webb, Pamela A. Marshall, S. Rolfe, J. Stapledon, T.W. MacElwee	2000	20
10	Surface Passivation of AlGaN/GaN HFETs Using AlN Layer Deposited by Reactive Magnetron Sputtering Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Y. Liu, J. A. Bardwell, S. P. McAlister, S. Rolfe, H. Tang, J. B. Webb	2002	20
11	Growth of crack-free, carbon-doped GaN and AlGaN∕GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy Applied Physics Letters ·S. Haffouz, H. Tang, S. Rolfe, J. A. Bardwell	2006	15
12	Silicon atomic plane doping in MBE grown InAs/GaAs Solid State Communications ·Robin L. Williams, P. T. Coleridge, Z. R. Wasilewski, M. Dion, A. S. Sachrajda, S. Rolfe	1991	14
13	In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation Applied Physics Letters ·Hong Tang, J. A. Bardwell, J. B. Webb, S. Rolfe, Y. Liu, S. Moisa, I. Sproule	2003	13
14	Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy Solid-State Electronics ·H. Tang, J. B. Webb, J. A. Bardwell, S. Rolfe, T.W. MacElwee	2000	12
15	Laser induced growth of Cd1−xMnxTe and CdTeCd1−xMnxTe superlattices Superlattices and Microstructures ·Jan J. Dubowski, J. R. Thompson, S. Rolfe, J. P. McCaffrey	1991	11
16	Characterization of very thin Ge epilayers on (100) Si by spectroscopic ellipsometry Thin Solid Films ·John Hulse, S. Rolfe	1993	10
17	Contamination in molecular beam epitaxy: the role of arsenic drag effect Journal of Crystal Growth ·Z. R. Wasilewski, S. Rolfe, R. A. Wilson	1997	10
18	Selective growth of GaN on a SiC substrate patterned with an AlN seed layer by ammonia molecular-beam epitaxy Applied Physics Letters ·H. Tang, J. A. Bardwell, J. B. Webb, S. Moisa, J. Fraser, S. Rolfe	2001	10
19	Relation between premature ventricular contraction site of origin (defined by radionuclide phase analysis) and subsequent left ventricular function The American Journal of Cardiology ·S. Rolfe, Timothy Rasor, Phillip A. Shaffer, Patricia A. Sanitate, Thomas M. Bashore	1984	9
20	Matrix effects in sims depth profiles of SiGe superlattices Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·J. A. Jackman, L. Dignard‐Bailey, R. S. Storey, C.D. MacPherson, S. Rolfe, L. van der Zwan, T. E. Jackman	1990	9

About S. Rolfe

S. Rolfe is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 52 papers that have together received 639 indexed citations. Recurring topics across this work include Semiconductor materials and devices (29 papers), GaN-based semiconductor devices and materials (20 papers), Semiconductor Quantum Structures and Devices (17 papers), Ga2O3 and related materials (12 papers), Thin-Film Transistor Technologies (7 papers), Semiconductor materials and interfaces (7 papers), Advanced Semiconductor Detectors and Materials (6 papers) and Silicon Nanostructures and Photoluminescence (6 papers). The work is most often cited by research in Condensed Matter Physics (417 citations), Electronic, Optical and Magnetic Materials (245 citations), Electrical and Electronic Engineering (408 citations), Atomic and Molecular Physics, and Optics (179 citations) and Materials Chemistry (205 citations). S. Rolfe has collaborated with scholars based in Canada, United States and France. Frequent co-authors include J. A. Bardwell, H. Tang, J. B. Webb, J. B. Webb, J.‐M. Baribeau, S. Moisa, J. Fraser, S. Haffouz, John Hulse and G. I. Sproule. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Thin Solid Films, Journal of Applied Physics and Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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