J. B. Webb

478 citations

16 papers · 425 · h-index 11

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 13
- GaN-based semiconductor devices and materials 13
Electrical and Electronic Engineering 10
- Semiconductor materials and devices 9
- Chalcogenide Semiconductor Thin Films 1

Co-authors: J. A. Bardwell (9 shared papers)H. Tang (7 shared papers)S. Rolfe (3 shared papers)S. Raymond (1 shared paper)C. Uzan-Saguy (1 shared paper)J. Salzman (1 shared paper)S. Haffouz (3 shared papers)Douglas G. Ivey (1 shared paper)
Journals: Applied Physics Letters (3 papers)Solid-State Electronics (2 papers)Physical review. B, Condensed matter (1 paper)Materials Science and Engineering B (1 paper)IEEE Transactions on Electron Devices (1 paper)
Partner nations: Canada Taiwan United States

In The Last Decade

J. B. Webb

16 papers receiving 409 citations

Peers

Countries citing papers authored by J. B. Webb

Since Specialization

Citations

This map shows the geographic impact of J. B. Webb's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. B. Webb with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. B. Webb more than expected).

Fields of papers citing papers by J. B. Webb

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. B. Webb. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. B. Webb. The network helps show where J. B. Webb may publish in the future.

Co-authors

The 25 scholars most cited alongside J. B. Webb, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. B. Webb Line = papers co-authored together J. B. Webb links everyone, so they are left out of the graph.

All Works

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16 of 16 papers shown

#	Work
1	Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy Applied Physics Letters ·J. B. Webb, H. Tang, S. Rolfe, J. A. Bardwell	1999	139
2	Properties of carbon-doped GaN Applied Physics Letters ·H. Tang, J. B. Webb, J. A. Bardwell, S. Raymond, J. Salzman, C. Uzan-Saguy	2001	137
3	InGaN/GaN light emitting diodes with a p-down structure IEEE Transactions on Electron Devices ·Ying Su, Shoou‐Jinn Chang, Chih-Hsin Ko, J.F. Chen, Ta‐Ming Kuan, Wen How Lan, Lu‐Yin Lin, Ya-Tung Cherng, J. B. Webb	2002	22
4	Microstructural analysis of Ti/Al/Ti/Au ohmic contacts to n-AlGaN/GaN Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·J. Chen, Douglas G. Ivey, J. A. Bardwell, Y. Liu, Hsin-Yu Tang, J. B. Webb	2002	21
5	Deep-level transient spectroscopy of HF-cleaned and sulfur-passivated InP metal/nitride/semiconductor structures Journal of Applied Physics ·D. Landheer, Gholam Hossein Yousefi, J. B. Webb, R. W. M. Kwok, W. M. Lau	1994	17
6	Nitride-based 2DEG photodetectors with a large AC responsivity Solid-State Electronics ·S.J. Chang, Ta‐Ming Kuan, C.H. Ko, Y.K. Su, J. B. Webb, J. A. Bardwell, Y. Liu, H. Tang, W.J. Lin, Y. T. Cherng, W.H. Lan	2003	13
7	Thermally stimulated current spectroscopy and photoluminescence of carbon‐doped semi‐insulating GaN grown by ammonia‐based molecular beam epitaxy Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·(unknown), D. C. Look, B. Claflin, S. Haffouz, H. Tang, J. B. Webb	2005	13
8	Scattering lifetimes due to interface roughness with large lateral correlation length inAlxGa1−xN/GaNtwo-dimensional electron gas Physical review. B, Condensed matter ·Hao Tang, J. B. Webb, P. T. Coleridge, J. A. Bardwell, C.H. Ko, Y.K. Su, Sung‐Jae Chang	2002	12
9	Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy Solid-State Electronics ·H. Tang, J. B. Webb, J. A. Bardwell, S. Rolfe, T.W. MacElwee	2000	12
10	Effect of template morphology on the efficiency of InGaN∕GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy Applied Physics Letters ·H. Tang, S. Haffouz, A. Powell, J. A. Bardwell, J. B. Webb	2005	10
11	Surface and interface analysis of semiconductor materials Applied Surface Science ·Kun Li, J. Y. Lin, Andrew T. S. Wee, K.L. Tan, Z. C. Feng, J. B. Webb	1996	10
12	Ammonia molecular beam epitaxy growth of p-type GaN and application to bipolar junction transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Haffouz, H. Tang, J. A. Bardwell, S. Rolfe, E. M. Hsu, I. Sproule, S. Moisa, M. Beaulieu, J. B. Webb	2005	5
13	The Crystallization of a-ZnTe Canadian Journal of Physics ·J. B. Webb, Douglas Brodie	1975	4
14	Growth of High Mobility AlGaN/GaN Heterostructures by Ammonia-Molecular Beam Epitaxy physica status solidi (a) ·J. B. Webb, H. Tang, J. A. Bardwell, P. T. Coleridge	1999	4
15	Deep-level transient spectroscopic investigation of the EL2 deep-level in metalorganic chemical vapour deposited Ga_1−xIn_xAs epilayers Canadian Journal of Physics ·R. V. Lang, J. D. Leslie, J. B. Webb, A. P. Roth, M. Sacilotti, R. A. Masut	1989	3
16	Nitride-based HFETs with carrier confinement layers Materials Science and Engineering B ·Yikun Su, Shoou‐Jinn Chang, Ta‐Ming Kuan, C.H. Ko, J. B. Webb, W.H. Lan, Y. T. Cherng, S.C. Chen	2004	3

About J. B. Webb

J. B. Webb is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 16 papers that have together received 425 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (13 papers), Semiconductor materials and devices (9 papers), Ga2O3 and related materials (8 papers), Semiconductor Quantum Structures and Devices (5 papers), ZnO doping and properties (2 papers), Metal and Thin Film Mechanics (2 papers), Chalcogenide Semiconductor Thin Films (1 paper) and Phase-change materials and chalcogenides (1 paper). The work is most often cited by research in Condensed Matter Physics (378 citations), Electronic, Optical and Magnetic Materials (235 citations), Electrical and Electronic Engineering (219 citations), Materials Chemistry (164 citations) and Atomic and Molecular Physics, and Optics (83 citations). J. B. Webb has collaborated with scholars based in Canada, Taiwan and United States. Frequent co-authors include J. A. Bardwell, H. Tang, S. Rolfe, S. Raymond, C. Uzan-Saguy, J. Salzman, S. Haffouz, Douglas G. Ivey, R. W. M. Kwok and D. Landheer. Their work appears in journals such as Applied Physics Letters, Solid-State Electronics, Physical review. B, Condensed matter, Materials Science and Engineering B and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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