M. Rödder

1.5k citations

73 papers · 802 · h-index 16

Impact in

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Advanced Memory and Neural Computing
- Electrostatic Discharge in Electronics
- Silicon and Solar Cell Technologies
Materials Chemistry

Papers in

Electrical and Electronic Engineering 71
- Semiconductor materials and devices 63
- Advancements in Semiconductor Devices and Circuit Design 54
- Integrated Circuits and Semiconductor Failure Analysis 16
- Silicon and Solar Cell Technologies 13
- Thin-Film Transistor Technologies 13
- Ferroelectric and Negative Capacitance Devices 12
- Low-power high-performance VLSI design 6
Atomic and Molecular Physics, and Optics 13
- Semiconductor materials and interfaces 13

Co-authors: D.A. Antoniadis (6 shared papers)J. A. Kittl (12 shared papers)A. Amerasekera (4 shared papers)Titash Rakshit (4 shared papers)B. Obradovic (4 shared papers)S. Aur (9 shared papers)V. Reddy (1 shared paper)C. Duvvury (1 shared paper)
Journals: IEEE Electron Device Letters (15 papers)IEEE Transactions on Electron Devices (4 papers)Microelectronic Engineering (2 papers)Applied Physics Letters (2 papers)Journal of The Electrochemical Society (1 paper)
Partner nations: United States South Korea Belgium

In The Last Decade

M. Rödder

69 papers receiving 761 citations

Peers

Countries citing papers authored by M. Rödder

Since Specialization

Citations

This map shows the geographic impact of M. Rödder's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Rödder with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Rödder more than expected).

Fields of papers citing papers by M. Rödder

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Rödder. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Rödder. The network helps show where M. Rödder may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Rödder, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Rödder Line = papers co-authored together M. Rödder links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 73 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	SoC Logic Compatible Multi-Bit FeMFET Weight Cell for Neuromorphic Applications Kai Ni, J. A. Smith, Benjamin Grisafe, Titash Rakshit, B. Obradovic, J. A. Kittl, M. Rödder, Suman Datta	2018	104
2	Substrate triggering and salicide effects on ESD performance and protection circuit design in deep submicron CMOS processes A. Amerasekera, C. Duvvury, V. Reddy, M. Rödder	2002	66
3	Shallow trench isolation for advanced ULSI CMOS technologies M. Nandakumar, Subhashri Chatterjee, S. Sridhar, K. Joyner, M. Rödder, I.-C. Chen	2002	45
4	Transistor design issues in integrating analog functions with high performance digital CMOS Amitava Chatterjee, K. Vasanth, D.T. Grider, M. Nandakumar, G. Pollack, Rahul Aggarwal, M. Rödder, H. Shichijo	1999	41
5	Ferroelectric Switching Delay as Cause of Negative Capacitance and the Implications to NCFETs B. Obradovic, Titash Rakshit, Ryan Hatcher, J. A. Kittl, M. Rödder	2018	38
6	Low voltage stress-induced-leakage-current in ultrathin gate oxides Paul E. Nicollian, M. Rödder, D.T. Grider, P. Chen, Robert M. Wallace, S. V. Hattangady	2003	34
7	Silicon-on-insulator bipolar transistors IEEE Electron Device Letters ·M. Rödder, D.A. Antoniadis	1983	26
8	Assessment of charge-induced damage to ultra-thin gate MOSFETs S. Krishnan, S. Rangan, S. V. Hattangady, Guoqiang Xing, K. Brennan, M. Rödder, S. Ashok	2002	26
9	Hot-carrier effects in Hydrogen-passivated p-channel polycrystalline-Si MOSFET's IEEE Transactions on Electron Devices ·M. Rödder, D.A. Antoniadis	1987	25
10	On/off current ratio in P-channel poly-Si MOSFETs: dependence on hot-carrier stress conditions IEEE Electron Device Letters ·M. Rödder	1990	25
11	Correlating drain junction scaling, salicide thickness, and lateral NPN behavior, with the ESD/EOS performance of a 0.25 μm CMOS process A. Amerasekera, V.M. McNeil, M. Rödder	2002	23
12	Effects of H⁺implant dose and film deposition conditions on polycrystalline-Si MOSFET characteristics IEEE Electron Device Letters ·M. Rödder, D.A. Antoniadis, F. Scholz, A. Kalnitsky	1987	21
13	Raised source/drain MOSFET with dual sidewall spacers IEEE Electron Device Letters ·M. Rödder, D. Yeakley	1991	20
14	Leakage-current-induced hot-carrier degradation of p-channel MOSFETs IEEE Electron Device Letters ·M. Rödder	1988	20
15	Comparison of different techniques for passivation of small-grain polycrystalline-Si MOSFET's IEEE Electron Device Letters ·M. Rödder, D.A. Antoniadis	1985	18
16	Feasibility of using W/TiN as metal gate for conventional 0.13 μm CMOS technology and beyond Jerry C. Hu, Hsiwen Yang, R. Kraft, Antonio Rotondaro, S. V. Hattangady, W.W. Lee, R. A. Chapman, C. Chao, Amitava Chatterjee, Maureen A. Hanratty, M. Rödder, I.-C. Chen	2002	16
17	A 0.10 μm gate length CMOS technology with 30 Å gate dielectric for 1.0 V-1.5 V applications M. Rödder, Maureen A. Hanratty, D. Rogers, Timo Laaksonen, Jinlong Hu, S. Murtaza, C. Chao, S. V. Hattangady, S. Aur, A. Amerasekera, I.-C. Chen	2002	15
18	Utilization of plasma hydrogenation in stacked SRAM's with poly-Si PMOSFET's and bulk-Si NMOSFET's IEEE Electron Device Letters ·M. Rödder, S. Aur	1991	15
19	A 1.2 V, 0.1 μm gate length CMOS technology: design and process issues M. Rödder, S. V. Hattangady, Ning Yu, Wei-Tsun Shiau, Paul E. Nicollian, Timo Laaksonen, C.P. Chao, M. Mehrotra, C. Lee, S. Murtaza, S. Aur	2002	15
20	A scaled 1.8 V, 0.18 μm gate length CMOS technology: device design and reliability considerations M. Rödder, S. Aur, I.-C. Chen	2002	14

About M. Rödder

M. Rödder is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Biomedical Engineering and Mechanics of Materials, having authored 73 papers that have together received 802 indexed citations. Recurring topics across this work include Semiconductor materials and devices (63 papers), Advancements in Semiconductor Devices and Circuit Design (54 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers), Silicon and Solar Cell Technologies (13 papers), Semiconductor materials and interfaces (13 papers), Thin-Film Transistor Technologies (13 papers), Ferroelectric and Negative Capacitance Devices (12 papers) and Low-power high-performance VLSI design (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (786 citations), Materials Chemistry (162 citations), Hardware and Architecture (20 citations), Atomic and Molecular Physics, and Optics (79 citations) and Biomedical Engineering (59 citations). M. Rödder has collaborated with scholars based in United States, South Korea and Belgium. Frequent co-authors include D.A. Antoniadis, J. A. Kittl, A. Amerasekera, Titash Rakshit, B. Obradovic, S. Aur, V. Reddy, C. Duvvury, S. V. Hattangady and Amitava Chatterjee. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Microelectronic Engineering, Applied Physics Letters and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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