V. Reddy

2.1k citations

34 papers · 1.6k · h-index 17

Impact in

Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Electrostatic Discharge in Electronics
- Low-power high-performance VLSI design
- Silicon Carbide Semiconductor Technologies
- Advanced Memory and Neural Computing
Hardware and Architecture top 5%

Papers in

Electrical and Electronic Engineering 34
- Semiconductor materials and devices 29
- Advancements in Semiconductor Devices and Circuit Design 28
- Integrated Circuits and Semiconductor Failure Analysis 18
- Electrostatic Discharge in Electronics 6
- Ferroelectric and Negative Capacitance Devices 2
- Photonic and Optical Devices 2
- Advanced Memory and Neural Computing 2
Atomic and Molecular Physics, and Optics 4
- Semiconductor materials and interfaces 3

Co-authors: S. Krishnan (16 shared papers)A.T. Krishnan (11 shared papers)S. Chakravarthi (4 shared papers)J. Antonio Travieso-Rodríguez (3 shared papers)C. Machala (1 shared paper)Rakesh Vattikonda (1 shared paper)Wenping Wang (1 shared paper)Yu Cao (1 shared paper)
Journals: IEEE Transactions on Device and Materials Reliability (2 papers)Microelectronics Reliability (2 papers)Electronics Letters (1 paper)IEEE Transactions on Electron Devices (1 paper)Purdue e-Pubs (Purdue University System) (1 paper)
Partner nations: United States United Kingdom India

In The Last Decade

V. Reddy

33 papers receiving 1.5k citations

Peers

Countries citing papers authored by V. Reddy

Since Specialization

Citations

This map shows the geographic impact of V. Reddy's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Reddy with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Reddy more than expected).

Fields of papers citing papers by V. Reddy

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Reddy. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Reddy. The network helps show where V. Reddy may publish in the future.

Co-authors

The 25 scholars most cited alongside V. Reddy, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Reddy Line = papers co-authored together V. Reddy links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 34 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Compact Modeling and Simulation of Circuit Reliability for 65-nm CMOS Technology IEEE Transactions on Device and Materials Reliability ·Wenping Wang, V. Reddy, A.T. Krishnan, Rakesh Vattikonda, S. Krishnan, Yu Cao	2007	262
2	A comprehensive framework for predictive modeling of negative bias temperature instability S. Chakravarthi, A.T. Krishnan, V. Reddy, C. Machala, S. Krishnan	2004	260
3	Impact of negative bias temperature instability on digital circuit reliability V. Reddy, A.T. Krishnan, Andrew Marshall, J. Antonio Travieso-Rodríguez, S. Natarajan, T.A. Rost, S. Krishnan	2003	193
4	NBTI impact on transistor and circuit: models, mechanisms and scaling effects [MOSFETs] A.T. Krishnan, V. Reddy, S. Chakravarthi, J. Antonio Travieso-Rodríguez, Samuel John, S. Krishnan	2004	169
5	Material dependence of hydrogen diffusion: implications for NBTI degradation A.T. Krishnan, C. Chancellor, S. Chakravarthi, Paul E. Nicollian, V. Reddy, A. Varghese, R. Khamankar, S. Krishnan	2006	148
6	Substrate triggering and salicide effects on ESD performance and protection circuit design in deep submicron CMOS processes A. Amerasekera, C. Duvvury, V. Reddy, M. Rödder	2002	66
7	off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown IEEE Transactions on Electron Devices ·Dhanoop Varghese, Haldun Küflüoğlu, V. Reddy, H. Shichijo, D. Mosher, S. Krishnan, Md Ashraful Alam	2007	62
8	Impact of negative bias temperature instability on product parametric drift V. Reddy, John M. Carulli, A.T. Krishnan, Wolfgang Bösch, Brent Burgess	2005	58
9	Universality of NBTI - From devices to circuits and products Souvik Mahapatra, V. Huard, A. Kerber, V. Reddy, S. Kalpat, A. Haggag	2014	51
10	Comparison of E and 1/E TDDB models for SiO/sub 2/ under long-term/low-field test conditions J. W. McPherson, V. Reddy, Kaustav Banerjee, Huy Le	2002	49
11	Impact of charging damage on negative bias temperature instability A.T. Krishnan, V. Reddy, S. Krishnan	2002	39
12	SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation A.T. Krishnan, V. Reddy, D. Aldrich, J. Raval, K.T. Christensen, J. Rosal, Christopher John O'Brien, R. Khamankar, Andrew Marshall, W. K. Loh, R. McKee, S. Krishnan	2006	31
13	Latch-up in 65nm CMOS technology: a scaling perspective Gianluca Boselli, V. Reddy, C. Duvvury	2005	31
14	A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure Purdue e-Pubs (Purdue University System) ·Dhanoop Varghese, V. Reddy, H. Shichijo, D. Mosher, S. Krishnan, Muhammad A. Alam	2008	22
15	Universality of Off-State Degradation in Drain Extended NMOS Transistors Dhanoop Varghese, Haldun Küflüoğlu, V. Reddy, H. Shichijo, S. Krishnan, Muhammad A. Alam	2006	18
16	High efficiency microwave diode oscillators Electronics Letters ·Sumati Javalagi, V. Reddy, K.K. Gullapalli, Dean P. Neikirk	1992	17
17	OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review Microelectronics Reliability ·Dhanoop Varghese, V. Reddy, S. Krishnan, Muhammad A. Alam	2014	17
18	Aging sensors for workload centric guardbanding in dynamic voltage scaling applications Min Chen, Haldun Küflüoğlu, John M. Carulli, V. Reddy	2013	14
19	An extensive and improved circuit simulation methodology for NBTI recovery Haldun Küflüoğlu, V. Reddy, Andrew Marshall, Jessica Krick, Tamer Ragheb, C.R. Cirba, A.T. Krishnan, C. Chancellor	2010	13
20	Challenges in Radio Frequency and Mixed-Signal Circuit Reliability V. Reddy, S. Martín, K. Benaissa, C. Chancellor, Karan Bhatia, (unknown), Vijay Rentala, S. Krishnan, J.C. Ondrusek	2019	11

About V. Reddy

V. Reddy is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Mechanics of Materials, Hardware and Architecture and Aerospace Engineering, having authored 34 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (29 papers), Advancements in Semiconductor Devices and Circuit Design (28 papers), Integrated Circuits and Semiconductor Failure Analysis (18 papers), Electrostatic Discharge in Electronics (6 papers), Semiconductor materials and interfaces (3 papers), Ferroelectric and Negative Capacitance Devices (2 papers), Photonic and Optical Devices (2 papers) and Advanced Memory and Neural Computing (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.6k citations), Hardware and Architecture (168 citations), Atomic and Molecular Physics, and Optics (75 citations), Electronic, Optical and Magnetic Materials (30 citations) and Computer Networks and Communications (27 citations). V. Reddy has collaborated with scholars based in United States, United Kingdom and India. Frequent co-authors include S. Krishnan, A.T. Krishnan, S. Chakravarthi, J. Antonio Travieso-Rodríguez, C. Machala, Rakesh Vattikonda, Wenping Wang, Yu Cao, C. Duvvury and Andrew Marshall. Their work appears in journals such as IEEE Transactions on Device and Materials Reliability, Microelectronics Reliability, Electronics Letters, IEEE Transactions on Electron Devices and Purdue e-Pubs (Purdue University System).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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