Robert M. Wallace
Impact in
- Materials Chemistry top 0.02%
- 2D Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Electronic and Structural Properties of Oxides
- Electrical and Electronic Engineering top 0.02%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
Papers in
-
- Semiconductor materials and devices 264
- Advancements in Semiconductor Devices and Circuit Design 54
- Integrated Circuits and Semiconductor Failure Analysis 45
-
- 2D Materials and Applications 104
- Electronic and Structural Properties of Oxides 87
- Graphene research and applications 70
- MXene and MAX Phase Materials 53
- Co-authors
- G. D. Wilk (10 shared papers)J. Anthony (3 shared papers)Kyeongjae Cho (70 shared papers)Stephen McDonnell (62 shared papers)Rafik Addou (60 shared papers)Luigi Colombo (46 shared papers)Adam Pirkle (13 shared papers)Christopher L. Hinkle (70 shared papers)
- Journals
- Applied Physics Letters (82 papers)Journal of Applied Physics (31 papers)ACS Applied Materials & Interfaces (20 papers)ACS Nano (20 papers)2D Materials (18 papers)
- Partner nations
- United StatesSouth KoreaIreland
In The Last Decade
Robert M. Wallace
445 papers receiving 39.4k citations
Robert M. Wallace's Hit Papers
Peers
Comparison fields: 5 of 183
- Materials Chemistry 25.4k
- Electrical and Electronic Engineering 26.7k
- Electronic, Optical and Magnetic Materials 8.1k
- Atomic and Molecular Physics, and Optics 5.4k
- Polymers and Plastics 2.2k
Countries citing papers authored by Robert M. Wallace
This map shows the geographic impact of Robert M. Wallace's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Robert M. Wallace with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Robert M. Wallace more than expected).
Fields of papers citing papers by Robert M. Wallace
This network shows the impact of papers produced by Robert M. Wallace. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Robert M. Wallace. The network helps show where Robert M. Wallace may publish in the future.
Co-authors
The 25 scholars most cited alongside Robert M. Wallace, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
Showing the 20 most-cited of 461 papers — load more, or switch the sort, to bring in the rest.
| # | Work | ||
|---|---|---|---|
| 1 | Carbon-Based Supercapacitors Produced by Activation of Graphene Hit paper breakdown → | 2011 | 5677 |
| 2 | High-κ gate dielectrics: Current status and materials properties considerations Hit paper breakdown → | 2001 | 5135 |
| 3 | Near-unity photoluminescence quantum yield in MoS 2 Hit paper breakdown → | 2015 | 1039 |
| 4 | The Role of Oxygen during Thermal Reduction of Graphene Oxide Studied by Infrared Absorption Spectroscopy Hit paper breakdown → | 2011 | 866 |
| 5 | Hafnium and zirconium silicates for advanced gate dielectrics Hit paper breakdown → | 2000 | 860 |
| 6 | The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 Hit paper breakdown → | 2011 | 848 |
| 7 | Defect-Dominated Doping and Contact Resistance in MoS2 Hit paper breakdown → | 2014 | 715 |
| 8 | The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces Hit paper breakdown → | 2014 | 690 |
| 9 | Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors Hit paper breakdown → | 2013 | 682 |
| 10 | Two-dimensional gallium nitride realized via graphene encapsulation Hit paper breakdown → | 2016 | 664 |
| 11 | High-K materials and metal gates for CMOS applications Hit paper breakdown → | 2014 | 609 |
| 12 | MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts Hit paper breakdown → | 2014 | 510 |
| 13 | Hole Selective MoOx Contact for Silicon Solar Cells Hit paper breakdown → | 2014 | 485 |
| 14 | 1999 | 446 | |
| 15 | 2012 | 406 | |
| 16 | Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures Hit paper breakdown → | 2015 | 375 |
| 17 | 2010 | 373 | |
| 18 | 2015 | 365 | |
| 19 | 2016 | 363 | |
| 20 | 2015 | 356 |
About Robert M. Wallace
Robert M. Wallace is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films, having authored 461 papers that have together received 40.4k indexed citations. Recurring topics across this work include Semiconductor materials and devices (264 papers), 2D Materials and Applications (104 papers), Semiconductor materials and interfaces (87 papers), Electronic and Structural Properties of Oxides (87 papers), Graphene research and applications (70 papers), Advancements in Semiconductor Devices and Circuit Design (54 papers), MXene and MAX Phase Materials (53 papers) and Integrated Circuits and Semiconductor Failure Analysis (45 papers). The work is most often cited by research in Materials Chemistry (25.4k citations), Electrical and Electronic Engineering (26.7k citations), Electronic, Optical and Magnetic Materials (8.1k citations), Atomic and Molecular Physics, and Optics (5.4k citations) and Polymers and Plastics (2.2k citations). Robert M. Wallace has collaborated with scholars based in United States, South Korea and Ireland. Frequent co-authors include G. D. Wilk, J. Anthony, Kyeongjae Cho, Stephen McDonnell, Rafik Addou, Luigi Colombo, Adam Pirkle, Christopher L. Hinkle, Rodney S. Ruoff and Angelica Azcatl. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, ACS Applied Materials & Interfaces, ACS Nano and 2D Materials.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.