G.A.M. Hurkx

2.4k citations
75 papers · 2.0k · 1 hit paper · h-index 20

Impact in

    • Semiconductor materials and devices
    • Advancements in Semiconductor Devices and Circuit Design
    • Silicon Carbide Semiconductor Technologies
    • Integrated Circuits and Semiconductor Failure Analysis
    • Radio Frequency Integrated Circuit Design

Papers in

    • Advancements in Semiconductor Devices and Circuit Design 40
    • Semiconductor materials and devices 28
    • Silicon Carbide Semiconductor Technologies 23
    • Electrostatic Discharge in Electronics 12
    • Radio Frequency Integrated Circuit Design 10
    • Chalcogenide Semiconductor Thin Films 8
    • Phase-change materials and chalcogenides 13

G.A.M. Hurkx

68 papers receiving 1.9k citations

G.A.M. Hurkx's Hit Papers

A new recombination model for device simulation including tunneling 1992 · 753 citations
7530+11+22Years since publication250500750

Peers

G.A.M. Hurkx
Comparison fields: 5 of 44
  • Instrumentation 120
  • Electrical and Electronic Engineering 1.7k
  • Condensed Matter Physics 328
  • Atomic and Molecular Physics, and Optics 408
  • Electronic, Optical and Magnetic Materials 180
Replace Dion McIntosh with:
Dion McIntosh United States
Baile Chen China
Yoshinari Kamakura Japan
Kazutoshi Kato Japan
K. M. Groom United Kingdom
Bing‐Yue Tsui Taiwan
Shui-Qing Yu United States
Nibir K. Dhar United States
Walter R. Buchwald United States
J. Allam United Kingdom
G.A.M. Hurkx relative to Dion McIntosh United States Dion McIntosh's profile →
Citations per field
00.5×1.5×2.4×
Dion McIntosh · 1×
Citations per year

Countries citing papers authored by G.A.M. Hurkx

Since Specialization
Citations

This map shows the geographic impact of G.A.M. Hurkx's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.A.M. Hurkx with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.A.M. Hurkx more than expected).

Fields of papers citing papers by G.A.M. Hurkx

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.A.M. Hurkx. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.A.M. Hurkx. The network helps show where G.A.M. Hurkx may publish in the future.

Co-authors

The 25 scholars most cited alongside G.A.M. Hurkx, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G.A.M. Hurkx Line = papers co-authored together G.A.M. Hurkx links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 75 papers — load more, or switch the sort, to bring in the rest.

#Work
1
A new recombination model for device simulation including tunneling
Hit paper breakdown →
1992753
2 1992164
3 2014114
4 198976
5 200748
6 201445
7 200343
8 200942
9 201439
10 200536
11 201234
12 198534
13 198430
14 200430
15 200528
16 201027
17 201525
18 200722
19 201121
20 201620

About G.A.M. Hurkx

G.A.M. Hurkx is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 75 papers that have together received 2.0k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (40 papers), Semiconductor materials and devices (28 papers), Silicon Carbide Semiconductor Technologies (23 papers), Phase-change materials and chalcogenides (13 papers), Electrostatic Discharge in Electronics (12 papers), Radio Frequency Integrated Circuit Design (10 papers), Chalcogenide Semiconductor Thin Films (8 papers) and GaN-based semiconductor devices and materials (8 papers). The work is most often cited by research in Instrumentation (120 citations), Electrical and Electronic Engineering (1.7k citations), Condensed Matter Physics (328 citations), Atomic and Molecular Physics, and Optics (408 citations) and Electronic, Optical and Magnetic Materials (180 citations). G.A.M. Hurkx has collaborated with scholars based in Netherlands, Belgium and Finland. Frequent co-authors include D.B.M. Klaassen, H.C. de Graaff, W.J. Kloosterman, J.A. Croon, Jan Šonský, Marco Silvestri, Martin Kuball, Michael J. Uren, W. van Haeringen and K. Attenborough. Their work appears in journals such as IEEE Transactions on Electron Devices, Solid-State Electronics, Journal of Applied Physics, IEEE Electron Device Letters and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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