J. Yang

3.6k citations

57 papers · 3.1k · h-index 27

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 53
- GaN-based semiconductor devices and materials 53
Electrical and Electronic Engineering 46
- Semiconductor materials and devices 36
- Silicon Carbide Semiconductor Technologies 15
- Advancements in Semiconductor Devices and Circuit Design 11
- Radio Frequency Integrated Circuit Design 6

Co-authors: M. S. Shur (24 shared papers)R. Gaška (24 shared papers)G. Simin (28 shared papers)M. Asif Khan (17 shared papers)X. Hu (16 shared papers)A. Osinsky (5 shared papers)M.A. Khan (12 shared papers)Ahmad Tarakji (8 shared papers)
Journals: Applied Physics Letters (17 papers)IEEE Electron Device Letters (9 papers)Electronics Letters (5 papers)Semiconductor Science and Technology (3 papers)Solid-State Electronics (3 papers)
Partner nations: United States South Korea Russia

In The Last Decade

J. Yang

55 papers receiving 2.9k citations

Peers

Countries citing papers authored by J. Yang

Since Specialization

Citations

This map shows the geographic impact of J. Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Yang more than expected).

Fields of papers citing papers by J. Yang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Yang. The network helps show where J. Yang may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Yang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Yang Line = papers co-authored together J. Yang links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 57 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor IEEE Electron Device Letters ·M.A. Khan, X. Hu, G. Sumin, A. Lunev, J. Yang, R. Gaška, M. S. Shur	2000	324
2	AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates Applied Physics Letters ·M. Asif Khan, X. Hu, Ahmad Tarakji, G. Simin, J. Yang, R. Gaška, M. S. Shur	2000	308
3	Self-heating in high-power AlGaN-GaN HFETs IEEE Electron Device Letters ·R. Gaška, A. Osinsky, J. Yang, M. S. Shur	1998	261
4	AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz IEEE Electron Device Letters ·V. Kumar, Wu Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, I. Adesida	2002	193
5	Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates Applied Physics Letters ·R. Gaška, J. Yang, A. Osinsky, Q. Chen, M. Asif Khan, Alexei O. Orlov, Gregory L. Snider, M. S. Shur	1998	181
6	Enhancement mode AlGaN/GaN HFET with selectivelygrown pn junction gate Electronics Letters ·X. Hu, G. Simin, J. Yang, M. Asif Khan, R. Gaška, M. S. Shur	2000	160
7	Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors Applied Physics Letters ·M. Asif Khan, Q. Chen, C. J. Sun, J. Yang, M. Blasingame, M. S. Shur, H. Park	1996	159
8	High-power 10-GHz operation of AlGaN HFET's on insulating SiC IEEE Electron Device Letters ·G.J. Sullivan, M.Y. Chen, J.A. Higgins, J. Yang, Q. Chen, R.L. Pierson, B. T. McDermott	1998	98
9	SiO 2 -passivated lateral-geometry GaN transparent Schottky-barrier detectors Applied Physics Letters ·V. Adivarahan, G. Simin, J. Yang, A. Lunev, M. Asif Khan, Nezih Pala, M. S. Shur, R. Gaška	2000	93
10	High quality GaN–InGaN heterostructures grown on (111) silicon substrates Applied Physics Letters ·J. Yang, C. J. Sun, Q. Chen, M. Zubair Anwar, M. Asif Khan, S. A. Nikishin, G. A. Seryogin, A. Osinsky, Leonid Chernyak, H. Temkin, Chimin Hu, S. Mahajan	1996	90
11	GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates Applied Physics Letters ·M. Asif Khan, J. Yang, W. Knap, Éric Frayssinet, X. Hu, G. Simin, P. Prystawko, M. Leszczyński, I. Grzegory, S. Porowski, R. Gaška, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu	2000	88
12	Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfill IEEE Electron Device Letters ·Jie Sun, (unknown), A. Koudymov, A. Chitnis, X. Hu, H.-M. Wang, Jianping Zhang, G. Simin, J. Yang, M.A. Khan	2003	88
13	Mechanism of radio-frequency current collapse in GaN–AlGaN field-effect transistors Applied Physics Letters ·Ahmad Tarakji, G. Simin, N. D. Il’inskaya, X. Hu, Amit Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, R. Gaška	2001	82
14	Submicron gate Si₃N₄/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors IEEE Electron Device Letters ·V. Adivarahan, Mikhail Gaevski, Wenhong Sun, (unknown), A. Koudymov, Salih Saygı, G. Simin, J. Yang, M.A. Khan, Ahmad Tarakji, M. S. Shur, R. Gaška	2003	75
15	Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors Journal of Applied Physics ·Nelson Braga, R. Mickevičius, R. Gaška, X. Hu, M. S. Shur, M. Asif Khan, G. Simin, J. Yang	2004	71
16	Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm IEEE Electron Device Letters ·V. Adivarahan, J. Yang, A. Koudymov, G. Simin, M.A. Khan	2005	66
17	Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors Applied Physics Letters ·Sergey Rumyantsev, Nezih Pala, M. S. Shur, R. Gaška, M. E. Levinshteĭn, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan	2001	57
18	Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs IEEE Electron Device Letters ·A. Koudymov, X. Hu, Kirill Simin, G. Simin, Mohammod Ali, J. Yang, M. Asif Khan	2002	57
19	Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors Applied Physics Letters ·R. Gaška, J. Yang, A. Osinsky, Alexei Bykhovski, M. S. Shur	1997	50
20	Highly doped thin-channel GaN-metal–semiconductor field-effect transistors Applied Physics Letters ·R. Gaška, M. S. Shur, X. Hu, J. Yang, Ahmad Tarakji, G. Simin, Asif Khan, Jie Deng, T. Werner, Sergey Rumyantsev, Nezih Pala	2001	47

About J. Yang

J. Yang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 57 papers that have together received 3.1k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (53 papers), Semiconductor materials and devices (36 papers), Ga2O3 and related materials (23 papers), Silicon Carbide Semiconductor Technologies (15 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), ZnO doping and properties (6 papers), Radio Frequency Integrated Circuit Design (6 papers) and Semiconductor Quantum Structures and Devices (4 papers). The work is most often cited by research in Condensed Matter Physics (2.8k citations), Electronic, Optical and Magnetic Materials (1.4k citations), Electrical and Electronic Engineering (2.1k citations), Atomic and Molecular Physics, and Optics (648 citations) and Materials Chemistry (751 citations). J. Yang has collaborated with scholars based in United States, South Korea and Russia. Frequent co-authors include M. S. Shur, R. Gaška, G. Simin, M. Asif Khan, X. Hu, A. Osinsky, M.A. Khan, Ahmad Tarakji, A. Koudymov and A. Lunev. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Electronics Letters, Semiconductor Science and Technology and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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