J.A. Higgins

2.8k citations

114 papers · 2.1k · h-index 24

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 2%
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Advanced Power Amplifier Design
- Semiconductor materials and devices
- Microwave Engineering and Waveguides
- Advanced MEMS and NEMS Technologies

Papers in

Electrical and Electronic Engineering 104
- Radio Frequency Integrated Circuit Design 63
- Advancements in Semiconductor Devices and Circuit Design 45
- Advanced Power Amplifier Design 26
- Microwave Engineering and Waveguides 21
- Semiconductor materials and devices 16
Condensed Matter Physics 9
- GaN-based semiconductor devices and materials 9

Co-authors: Mau-Chung Frank Chang (27 shared papers)Emilio A. Sovero (28 shared papers)Peter M. Asbeck (18 shared papers)Qiyu Chen (6 shared papers)K.C. Wang (9 shared papers)N.H. Sheng (13 shared papers)G.J. Sullivan (11 shared papers)W.J. Ho (33 shared papers)
Journals: IEEE Transactions on Electron Devices (12 papers)Electronics Letters (11 papers)IEEE Transactions on Microwave Theory and Techniques (9 papers)IEEE Electron Device Letters (8 papers)IEEE Microwave and Wireless Components Letters (3 papers)
Partner nations: United States South Korea Ireland

In The Last Decade

J.A. Higgins

106 papers receiving 1.9k citations

Peers

Countries citing papers authored by J.A. Higgins

Since Specialization

Citations

This map shows the geographic impact of J.A. Higgins's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.A. Higgins with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.A. Higgins more than expected).

Fields of papers citing papers by J.A. Higgins

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.A. Higgins. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.A. Higgins. The network helps show where J.A. Higgins may publish in the future.

Co-authors

The 25 scholars most cited alongside J.A. Higgins, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.A. Higgins Line = papers co-authored together J.A. Higgins links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 114 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application IEEE Transactions on Electron Devices ·Peter M. Asbeck, Mau-Chung Frank Chang, J.A. Higgins, N.H. Sheng, G.J. Sullivan, K.C. Wang	1989	168
2	Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors IEEE Electron Device Letters ·M. Asif Khan, Qiyu Chen, Jinwei Yang, Michael Shur, B.T. Dermott, J.A. Higgins	1996	155
3	MEM relay for reconfigurable RF circuits IEEE Microwave and Wireless Components Letters ·R.E. Mihailovich, Moonil Kim, J.B. Hacker, Emilio A. Sovero, J. Studer, J.A. Higgins, Jeff F. DeNatale	2001	122
4	Short-channel GaN/AlGaN doped channel heterostructurefieldeffect transistors with 36.1 cutoff frequency Electronics Letters ·M. Asif Khan, Qiyu Chen, Michael Shur, B.T. Dermott, J.A. Higgins, Jinwook Burm, William J Schaff, LESTER F. EASTMAN	1996	105
5	CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz IEEE Electron Device Letters ·M. Asif Khan, Qiyu Chen, Michael Shur, B.T. Dermott, J.A. Higgins, Jinwook Burm, William J Schaff, LESTER F. EASTMAN	1996	103
6	High-power 10-GHz operation of AlGaN HFET's on insulating SiC IEEE Electron Device Letters ·G.J. Sullivan, M.Y. Chen, J.A. Higgins, J. Yang, Qiyu Chen, R.L. Pierson, B. T. McDermott	1998	98
7	AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process IEEE Electron Device Letters ·Mau-Chung Frank Chang, Peter M. Asbeck, K.C. Wang, G.J. Sullivan, Neng-Haung Sheng, J.A. Higgins +1 other	1987	90
8	Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits IEEE Transactions on Microwave Theory and Techniques ·Peter M. Asbeck, Mau-Chung Frank Chang, K.C. Wang, Gerard Sullivan, N.H. Sheng, Emilio A. Sovero, J.A. Higgins +1 other	1987	76
9	Development of a 100-W 200-GHz High Bandwidth mm-Wave Amplifier IEEE Transactions on Electron Devices ·Mark Field, T. Kimura, John Atkinson, Diana Gamzina, Neville C. Luhmann, Brad Stockwell, Thomas J. Grant, Zachary M. Griffith	2018	76
10	Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits IEEE Transactions on Electron Devices ·Peter M. Asbeck, Mau-Chung Frank Chang, K.C. Wang, D. L. Miller, Gerard Sullivan, N.H. Sheng, Emilio A. Sovero, J.A. Higgins	1987	72
11	GaN based heterostructure for high power devices Solid-State Electronics ·Md Asif Khan, Qiyu Chen, Michael Shur, B.T. Dermott, J.A. Higgins, Jinwook Burm, William J Schaff, LESTER F. EASTMAN	1997	70
12	Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHz IEEE Transactions on Microwave Theory and Techniques ·Nan L. Wang, N.H. Sheng, Mau-Chung Frank Chang, W.J. Ho, Gerard Sullivan, Emilio A. Sovero, J.A. Higgins, Peter M. Asbeck	1990	66
13	AlGaAs/GaAs HBT linearity characteristics IEEE Transactions on Microwave Theory and Techniques ·Nan L. Wang, W.J. Ho, J.A. Higgins	1994	41
14	Ka -band waveguide phase shifter using tunable electromagnetic crystal sidewalls IEEE Transactions on Microwave Theory and Techniques ·J.A. Higgins, Hao Xin, A. Sailer, Mark J. Rosker	2003	39
15	Low-noise GaAs FET's prepared by ion implantation IEEE Transactions on Electron Devices ·J.A. Higgins, R.L. Kuvås, Fred H. Eisen, D.R. Ch'en	1978	37
16	Thermal properties of power HBT's IEEE Transactions on Electron Devices ·J.A. Higgins	1993	37
17	Waveform-based modeling and characterization of microwave power heterojunction bipolar transistors IEEE Transactions on Microwave Theory and Techniques ·Ce-Jun Wei, Yuntao Lan, James C. M. Hwang, Wu-Jing Ho, J.A. Higgins	1995	31
18	A rectangular tem waveguide with photonic crystal walls for excitation of quasi-optical amplifiers IEEE MTT-S International Microwave Symposium digest ·Moonil Kim, J.B. Hacker, A. Sailer, S. Kim, Daniel F. Sievenpiper, J.A. Higgins	1999	30
19	GaInP/GaAs HBTs for high-speed integrated circuit applications IEEE Electron Device Letters ·W.J. Ho, Mau-Chung Frank Chang, A. Sailer, Peter J. Zampardi, D.S. Deakin, B. T. McDermott, R.L. Pierson, J.A. Higgins	1993	29
20	Large-signal modeling of self-heating, collector transit-time, and RF-breakdown effects in power HBTs IEEE Transactions on Microwave Theory and Techniques ·C.J. Wei, James C. M. Hwang, W.J. Ho, J.A. Higgins	1996	29

About J.A. Higgins

J.A. Higgins is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Aerospace Engineering and Electronic, Optical and Magnetic Materials, having authored 114 papers that have together received 2.1k indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (63 papers), Advancements in Semiconductor Devices and Circuit Design (45 papers), Advanced Power Amplifier Design (26 papers), Microwave Engineering and Waveguides (21 papers), Semiconductor materials and devices (16 papers), GaN-based semiconductor devices and materials (9 papers), Metamaterials and Metasurfaces Applications (6 papers) and Advanced Antenna and Metasurface Technologies (6 papers). The work is most often cited by research in Condensed Matter Physics (539 citations), Electrical and Electronic Engineering (1.4k citations), Atomic and Molecular Physics, and Optics (299 citations), Aerospace Engineering (96 citations) and Electronic, Optical and Magnetic Materials (41 citations). J.A. Higgins has collaborated with scholars based in United States, South Korea and Ireland. Frequent co-authors include Mau-Chung Frank Chang, Emilio A. Sovero, Peter M. Asbeck, Qiyu Chen, K.C. Wang, N.H. Sheng, G.J. Sullivan, W.J. Ho, Michael Shur and M. Asif Khan. Their work appears in journals such as IEEE Transactions on Electron Devices, Electronics Letters, IEEE Transactions on Microwave Theory and Techniques, IEEE Electron Device Letters and IEEE Microwave and Wireless Components Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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