J. Strane

952 citations

24 papers · 547 · h-index 9

Impact in

Structural Biology top 10%
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Carbide Semiconductor Technologies

Papers in

Electrical and Electronic Engineering 21
- Semiconductor materials and devices 12
- Silicon and Solar Cell Technologies 7
- Integrated Circuits and Semiconductor Failure Analysis 4
- Advancements in Semiconductor Devices and Circuit Design 3
- Silicon Carbide Semiconductor Technologies 2
Atomic and Molecular Physics, and Optics 9
- Semiconductor materials and interfaces 8

Co-authors: J. W. Mayer (8 shared papers)S. T. Picraux (6 shared papers)H. J. Stein (4 shared papers)J. Watanabe (2 shared papers)S. R. Lee (4 shared papers)Barney L. Doyle (2 shared papers)Stephen W. Russell (3 shared papers)David E. Luzzi (3 shared papers)
Journals: Journal of Applied Physics (4 papers)Applied Physics Letters (2 papers)Ultramicroscopy (2 papers)Microelectronic Engineering (1 paper)Japanese Journal of Applied Physics (1 paper)
Partner nations: United States Germany South Africa

In The Last Decade

J. Strane

22 papers receiving 522 citations

Peers

Countries citing papers authored by J. Strane

Since Specialization

Citations

This map shows the geographic impact of J. Strane's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Strane with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Strane more than expected).

Fields of papers citing papers by J. Strane

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Strane. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Strane. The network helps show where J. Strane may publish in the future.

Co-authors

The 25 scholars most cited alongside J. Strane, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Strane Line = papers co-authored together J. Strane links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 24 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Metastable SiGeC formation by solid phase epitaxy Applied Physics Letters ·J. Strane, H. J. Stein, S. R. Lee, Barney L. Doyle, S. T. Picraux, J. W. Mayer	1993	108
2	Precipitation and relaxation in strained Si1−yCy/Si heterostructures Journal of Applied Physics ·J. Strane, H. J. Stein, S. R. Lee, S. T. Picraux, J. Watanabe, J. W. Mayer	1994	107
3	Carbon incorporation into Si at high concentrations by ion implantation and solid phase epitaxy Journal of Applied Physics ·J. Strane, S. R. Lee, H. J. Stein, S. T. Picraux, J. Watanabe, J. W. Mayer	1996	57
4	Electron irradiation damage in oxides Ultramicroscopy ·M. I. Buckett, J. Strane, David E. Luzzi, J.P. Zhang, B. W. Wessels, Laurence D. Marks	1989	57
5	Observation and prediction of first phase formation in binary Cu-metal thin films Journal of Applied Physics ·Jian Li, J. Strane, Stephen W. Russell, Seon‐Eui Hong, J. W. Mayer, T. Marais, C.C. Theron, R. Pretoriüs	1992	48
6	Reaction kinetics in the Ti/SiO2 system and Ti thickness dependence on reaction rate Journal of Applied Physics ·Stephen W. Russell, J. Strane, J. W. Mayer, S. Q. Wang	1994	42
7	Raman spectroscopy study of microscopic strain in epitaxial Si1−x−yGexCy alloys Applied Physics Letters ·J. Menéndez, P. Gopalan, G. S. Spencer, N. Cave, J. Strane	1995	40
8	Encapsulation, diffusion and diet in the electron microscope Ultramicroscopy ·J. Strane, Laurence D. Marks, David E. Luzzi, M. I. Buckett, J.P. Zhang, Bruce W. Wessels	1988	23
9	Optical Characterization of Si_1-xC_x/Si ( 0≤x≤0.014) Semiconductor Alloys Japanese Journal of Applied Physics ·Hosun Lee, S. R. Kurtz, Jerrold A. Floro, J. Strane, C. H. Seager, S. R. Lee, E. D. Jones, Jocienne Nelson, Thomas Mayer, S. T. Picraux	1995	10
10	Fin formation using graphoepitaxy DSA for FinFET device fabrication Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Chi‐Chun Liu, Fee Li Lie, Vinayak Rastogi, Elliott Franke, Nihar Mohanty, Richard A. Farrell, Hsinyu Tsai, Kafai Lai, Melih Ozlem, Wooyong Cho, Sung Gon Jung, J. Strane, Mark Somervell, Sean Burns, Nelson Felix, Michael Guillorn, David Hetzer, Akiteru Ko, Matthew Colburn	2015	8
11	SOI FinFET versus bulk FinFET for 10nm and below Terence B. Hook, F. Allibert, Karthik Balakrishnan, B. Doris, Dechao Guo, Narasimha Rao Mavilla, E. Nowak, Gen Tsutsui, Richard G. Southwick, J. Strane, Xin Sun	2014	8
12	Detection and Verification of Silicide Pipe Defects on SOI Technology Using Voltage Contrast Inspection Proceedings - International Symposium for Testing and Failure Analysis ·Oliver D. Patterson, Hyoung H. Kang, J. Strane, C. Lavoie, Karl W. Barth, Xu Ouyang, Kevin Wu	2007	5
13	Stability And Precipitation Kinetics In Si_1-yC_y/Si and Si_1-x-yGe_xC/Si Heterostructures Prepared by Solid Phase Epitaxy MRS Proceedings ·J. Strane, S. T. Picraux, H. J. Stein, S. R. Lee, J. Candelaria, D. Theodore, J. W. Mayer	1993	5
14	Dielectric Function and Band Gaps of Si_1−xC_x AND Si_0.924−xGe_0.076C_x (0≤x≤0.014) Semiconductor Alloys Grown on Si MRS Proceedings ·Hosun Lee, Jerrold A. Floro, J. Strane, S. R. Lee, E. D. Jones, Thomas Mayer, S. T. Picraux	1995	5
15	Metastable Sic and SiGeC Alloys by Carbon Implantation and Solid Phase Epitaxy MRS Proceedings ·J. Strane, W. J. Edwards, J. W. Mayer, H. S. Stain, B. R. Lee, Barney L. Doyle, B. T. Piorauz	1992	5
16	Ultrafast wafer alignment simulation based on thin film theory Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Qiang Wu, Gary Williams, Byeong Y. Kim, J. Strane, Timothy J. Wiltshire, Eric A. Lehner, H. Akatsu	2002	5
17	HREM In-Situ Studies of Electron Irradiation Effects in Oxides MRS Proceedings ·David E. Luzzi, Laurence D. Marks, M. I. Buckett, J. Strane, B. W. Wessels, Peter C. Stair	1988	3
18	Amorphous Carbon as a Diffusion Barrier to Copper MRS Proceedings ·Richard G. Purser, J. Strane, James W. Mayer	1993	3
19	Technologies for scaling vertical transistor DRAM cells to 70 nm R. Divakaruni, C. Radens, Michael Belyansky, M. Chudzik, D.-G. Park, Sudesh Saroop, D. Chidambarrao, M. Weybright, H. Akatsu, Laertis Economikos, K. Settlemyer, J. Strane, D. Dobuzinsky, N.L. Edleman, (unknown), Y. Li, R. Jammy, E.F. Crabbé, G. Bronner	2004	3
20	Extending dual stress liner process to high performance 32nm node SOI CMOS manufacturing Ming Cai, B. Greene, J. Strane, Michael Belyansky, F.D. Tamweber, D. Lee, H. van Meer, E. Laffosse, S. Luning, D. Mocuta, E. Maciejewski	2008	2

About J. Strane

J. Strane is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Mechanics of Materials, having authored 24 papers that have together received 547 indexed citations. Recurring topics across this work include Semiconductor materials and devices (12 papers), Semiconductor materials and interfaces (8 papers), Silicon and Solar Cell Technologies (7 papers), Integrated Circuits and Semiconductor Failure Analysis (4 papers), Copper Interconnects and Reliability (4 papers), Metal and Thin Film Mechanics (3 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers) and Silicon Carbide Semiconductor Technologies (2 papers). The work is most often cited by research in Structural Biology (22 citations), Electrical and Electronic Engineering (415 citations), Surfaces, Coatings and Films (44 citations), Atomic and Molecular Physics, and Optics (174 citations) and Materials Chemistry (214 citations). J. Strane has collaborated with scholars based in United States, Germany and South Africa. Frequent co-authors include J. W. Mayer, S. T. Picraux, H. J. Stein, J. Watanabe, S. R. Lee, Barney L. Doyle, Stephen W. Russell, David E. Luzzi, M. I. Buckett and Laurence D. Marks. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Ultramicroscopy, Microelectronic Engineering and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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