B. Doris

3.5k citations

64 papers · 1.6k · h-index 19

Impact in

Structural Biology top 2%
- Advanced Electron Microscopy Techniques and Applications
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies

Papers in

Electrical and Electronic Engineering 60
- Semiconductor materials and devices 46
- Advancements in Semiconductor Devices and Circuit Design 44
- Integrated Circuits and Semiconductor Failure Analysis 17
- Silicon Carbide Semiconductor Technologies 9
- Ferroelectric and Negative Capacitance Devices 8
- Silicon and Solar Cell Technologies 7
- Thin-Film Transistor Technologies 5
Atomic and Molecular Physics, and Optics 13

Co-authors: M. Ieong (9 shared papers)K. Rim (5 shared papers)J. Kedzierski (5 shared papers)Min Yang (2 shared papers)Vamsi Paruchuri (8 shared papers)Alain C. Diebold (6 shared papers)Vijay Narayanan (4 shared papers)J. H. Stathis (4 shared papers)
Journals: IEEE Electron Device Letters (6 papers)Applied Physics Letters (5 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)Surface and Interface Analysis (1 paper)Physical Review Letters (1 paper)
Partner nations: United States France Switzerland

In The Last Decade

B. Doris

57 papers receiving 1.5k citations

Peers

Countries citing papers authored by B. Doris

Since Specialization

Citations

This map shows the geographic impact of B. Doris's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Doris with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Doris more than expected).

Fields of papers citing papers by B. Doris

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Doris. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Doris. The network helps show where B. Doris may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Doris, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Doris Line = papers co-authored together B. Doris links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 64 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Silicon Device Scaling to the Sub-10-nm Regime Science ·M. Ieong, B. Doris, J. Kedzierski, K. Rim, Min Yang	2004	483
2	A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates Sufi Zafar, Y. Kim, Vijay Narayanan, C. Cabral, Vamsi Paruchuri, B. Doris, J. H. Stathis, Agnese Callegari, M. Chudzik	2006	170
3	Extreme scaling with ultra-thin Si channel MOSFETs B. Doris, M. Ieong, T. Kanarsky, Ying Zhang, R. Roy, O. Dokumaci, Zhibin Ren, F. Jamin, Leathen Shi, W. Natzle, Hsiang-Jen Huang, J. Mezzapelle, A. Mocuta, S. Womack, M. Gribelyuk, E.C. Jones, R.J. Miller, H.‐S. Philip Wong, Wilfried Haensch	2003	146
4	Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography Physical Review Letters ·M. Gribelyuk, Martha R. McCartney, Jing Li, Ch. S. N. Murthy, Paul Ronsheim, B. Doris, J. S. McMurray, S. Hegde, David J. Smith	2002	94
5	Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers Applied Physics Letters ·Supratik Guha, Vamsi Paruchuri, M. Copel, Vijay Narayanan, Y. Y. Wang, Philip E. Batson, N. A. Bojarczuk, B.P. Linder, B. Doris	2007	82
6	Randomly oriented Angstrom-scale microroughness at the Si(100)/SiO2 interface probed by optical second harmonic generation Applied Physics Letters ·Jerry I. Dadap, B. Doris, Qiwen Deng, M. C. Downer, J. Lowell, Alain C. Diebold	1994	70
7	Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance Isaac Lauer, N. Loubet, S.D. Kim, J. A. Ott, S. Mignot, R. Venigalla, T. Yamashita, T. Standaert, J. Faltermeier, V. Basker, B. Doris, Michael Guillorn	2015	53
8	Total Ionizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies Zenodo (CERN European Organization for Nuclear Research) ·H.L. Hughes, P. J. McMarr, Michael L. Alles, En Xia Zhang, Charles N. Arutt, B. Doris, Derrick Liu, Richard G. Southwick, P. Oldiges	2015	41
9	Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length IEEE Electron Device Letters ·A. Khakifirooz, Kangguo Cheng, A. Reznicek, Thomas Adam, Nicolas Loubet, Hong He, J. Kuss, Juntao Li, Pranita Kulkarni, S. Ponoth, Raghavasimhan Sreenivasan, Qing Liu, B. Doris, G. Shahidi	2011	33
10	Optical metrology of Ni and NiSi thin films used in the self-aligned silicidation process Journal of Applied Physics ·Vimal Kamineni, M. Raymond, Eric Bersch, B. Doris, Alain C. Diebold	2010	32
11	Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond A. Khakifirooz, Kangguo Cheng, B. Jagannathan, Pranita Kulkarni, J.W. Sleight, Davood Shahrjerdi, Josephine Chang, Sungjae Lee, Junjun Li, Huiming Bu, Robert Gauthier, B. Doris, G. Shahidi	2010	29
12	High-Q magnetic inductors for high efficiency on-chip power conversion Naigang Wang, B. Doris, Andrea Bahgat Shehata, Eugene J. O'Sullivan, S. Brown, S. M. Rossnagel, J. A. Ott, Lynne Gignac, Maryam Massouras, Lubomyr T. Romankiw, Hariklia Deligianni	2016	28
13	Examination of hole mobility in ultra-thin body SOI MOSFETs Zhibin Ren, P. M. Solomon, T. Kanarsky, B. Doris, O. Dokumaci, P. Oldiges, R. Roy, E.C. Jones, M. Ieong, R.J. Miller, Wilfried Haensch, H.‐S. Philip Wong	2003	26
14	High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node (unknown), A. Ajmera, H. Park, D. Schepis, N. Zamdmer, K.A. Jenkins, Jean‐Olivier Plouchart, W.-H. Lee, J. Mezzapelle, J. Bruley, B. Doris, J.W. Sleight, S.K.H. Fung, S.H. Ku, A. Mocuta, Insoon Yang, P. Gilbert, K.P. Müller, P. Agnello, J.J. Welser	2002	24
15	Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- $\kappa$/Metal-Gate nFinFETs for High-Performance Logic Applications IEEE Electron Device Letters ·K. Maitra, A. Khakifirooz, Pranita Kulkarni, Veeraraghavan Basker, J. Faltermeier, Hemanth Jagannathan, Hemant Adhikari, Chun-Chen Yeh, N. Klymko, K. L. Saenger, T. Standaert, Robert J. Miller, B. Doris, Vamsi Paruchuri, Dale McHerron, James P. O’Neil, Effendi Leobundung, Huiming Bu	2011	23
16	A survey of non‐destructive surface characterization methods used to insure reliable gate oxide fabrication for silicon IC devices Surface and Interface Analysis ·Alain C. Diebold, B. Doris	1993	22
17	Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices Thin Solid Films ·N. Loubet, Thomas Adam, Mark Raymond, Qing Liu, Kangguo Cheng, Raghavasimhan Sreenivasan, A. Reznicek, Prasanna Khare, Walter Kleemeier, Vamsi Paruchuri, B. Doris, Ron Sampson	2011	20
18	Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond Solid-State Electronics ·B. Doris, B. DeSalvo, Kangguo Cheng, P. Morin, M. Vinet	2015	20
19	Vertical Slit FET at 7-nm Node and Beyond IEEE Transactions on Electron Devices ·Ping-Lin Yang, Terence B. Hook, P. Oldiges, B. Doris	2016	19
20	An experimental study on transport issues and electrostatics of ultrathin body SOI pMOSFETs IEEE Electron Device Letters ·Zhibin Ren, Suri Hegde, B. Doris, Phil Oldiges, T. Kanarsky, O. Dokumaci, R. Roy, M.S. Leong, E.C. Jones, H.‐S. Philip Wong	2002	15

About B. Doris

B. Doris is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Computational Mechanics and Surfaces, Coatings and Films, having authored 64 papers that have together received 1.6k indexed citations. Recurring topics across this work include Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers), Silicon Carbide Semiconductor Technologies (9 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Silicon and Solar Cell Technologies (7 papers), Nanowire Synthesis and Applications (6 papers) and Thin-Film Transistor Technologies (5 papers). The work is most often cited by research in Structural Biology (82 citations), Electrical and Electronic Engineering (1.3k citations), Surfaces, Coatings and Films (84 citations), Atomic and Molecular Physics, and Optics (339 citations) and Materials Chemistry (373 citations). B. Doris has collaborated with scholars based in United States, France and Switzerland. Frequent co-authors include M. Ieong, K. Rim, J. Kedzierski, Min Yang, Vamsi Paruchuri, Alain C. Diebold, Vijay Narayanan, J. H. Stathis, Agnese Callegari and Y. Kim. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Surface and Interface Analysis and Physical Review Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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