B. Doris

3.5k citations

63 papers · 1.5k · h-index 19

Impact in

Structural Biology top 2%
Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Ferroelectric and Negative Capacitance Devices
- Silicon Carbide Semiconductor Technologies
- Advanced Memory and Neural Computing

Papers in

Electrical and Electronic Engineering 59
- Semiconductor materials and devices 46
- Advancements in Semiconductor Devices and Circuit Design 44
- Integrated Circuits and Semiconductor Failure Analysis 17
- Silicon Carbide Semiconductor Technologies 9
- Ferroelectric and Negative Capacitance Devices 8
- Silicon and Solar Cell Technologies 6
Atomic and Molecular Physics, and Optics 13
- Force Microscopy Techniques and Applications 4

Co-authors: M. Ieong (9 shared papers)K. Rim (5 shared papers)J. Kedzierski (5 shared papers)Min Yang (2 shared papers)Vamsi Paruchuri (8 shared papers)Alain C. Diebold (5 shared papers)Vijay Narayanan (4 shared papers)J. H. Stathis (4 shared papers)
Journals: IEEE Electron Device Letters (6 papers)Applied Physics Letters (5 papers)Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2 papers)Electrochemical and Solid-State Letters (1 paper)Journal of Applied Physics (1 paper)
Partner nations: United States France Switzerland

In The Last Decade

B. Doris

56 papers receiving 1.5k citations

Peers

Countries citing papers authored by B. Doris

Since Specialization

Citations

This map shows the geographic impact of B. Doris's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Doris with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Doris more than expected).

Fields of papers citing papers by B. Doris

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Doris. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Doris. The network helps show where B. Doris may publish in the future.

Co-authors

The 25 scholars most cited alongside B. Doris, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. Doris Line = papers co-authored together B. Doris links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 63 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Silicon Device Scaling to the Sub-10-nm Regime Science ·M. Ieong, B. Doris, J. Kedzierski, K. Rim, Min Yang	2004	466
2	A Comparative Study of NBTI and PBTI (Charge Trapping) in SiO2/HfO2 Stacks with FUSI, TiN, Re Gates Sufi Zafar, Y. Kim, Vijay Narayanan, C. Cabral, Vamsi Paruchuri, B. Doris, J. H. Stathis, Agnese Callegari, M. Chudzik	2006	159
3	Extreme scaling with ultra-thin Si channel MOSFETs B. Doris, M. Ieong, T. Kanarsky, Ying Zhang, R. Roy, O. Dokumaci, Zhibin Ren, F. Jamin, Leathen Shi, W. Natzle, Hsiang-Jen Huang, J. Mezzapelle, A. Mocuta, S. Womack, M. Gribelyuk, E.C. Jones, R.J. Miller, H.‐S. Philip Wong, Wilfried Haensch	2003	137
4	Mapping of Electrostatic Potential in Deep Submicron CMOS Devices by Electron Holography Physical Review Letters ·M. Gribelyuk, Martha R. McCartney, Jing Li, Ch. S. N. Murthy, Paul Ronsheim, B. Doris, J. S. McMurray, S. Hegde, David J. Smith	2002	87
5	Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers Applied Physics Letters ·Supratik Guha, Vamsi Paruchuri, M. Copel, Vijay Narayanan, Y. Y. Wang, Philip E. Batson, N. A. Bojarczuk, B.P. Linder, B. Doris	2007	80
6	Randomly oriented Angstrom-scale microroughness at the Si(100)/SiO2 interface probed by optical second harmonic generation Applied Physics Letters ·Jerry I. Dadap, B. Doris, Qiwen Deng, M. C. Downer, J. Lowell, Alain C. Diebold	1994	66
7	Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance Isaac Lauer, N. Loubet, S.D. Kim, J. A. Ott, S. Mignot, R. Venigalla, T. Yamashita, T. Standaert, J. Faltermeier, V. Basker, B. Doris, Michael Guillorn	2015	52
8	Total Ionizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies Zenodo (CERN European Organization for Nuclear Research) ·H.L. Hughes, P. J. McMarr, Michael L. Alles, En Xia Zhang, Charles N. Arutt, B. Doris, Derrick Liu, Richard G. Southwick, P. Oldiges	2015	39
9	Optical metrology of Ni and NiSi thin films used in the self-aligned silicidation process Journal of Applied Physics ·Vimal Kamineni, M. Raymond, Eric Bersch, B. Doris, Alain C. Diebold	2010	32
10	Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length IEEE Electron Device Letters ·A. Khakifirooz, Kangguo Cheng, A. Reznicek, Thomas Adam, Nicolas Loubet, Hong He, J. Kuss, Juntao Li, Pranita Kulkarni, S. Ponoth, Raghavasimhan Sreenivasan, Qing Liu, B. Doris, G. Shahidi	2011	30
11	High-Q magnetic inductors for high efficiency on-chip power conversion Naigang Wang, B. Doris, Andrea Bahgat Shehata, Eugene J. O'Sullivan, S. Brown, S. M. Rossnagel, J. A. Ott, Lynne Gignac, Maryam Massouras, Lubomyr T. Romankiw, Hariklia Deligianni	2016	28
12	Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond A. Khakifirooz, Kangguo Cheng, B. Jagannathan, Pranita Kulkarni, J.W. Sleight, Davood Shahrjerdi, Josephine Chang, Sungjae Lee, Junjun Li, Huiming Bu, Robert Gauthier, B. Doris, G. Shahidi	2010	27
13	Examination of hole mobility in ultra-thin body SOI MOSFETs Zhibin Ren, P. M. Solomon, T. Kanarsky, B. Doris, O. Dokumaci, P. Oldiges, R. Roy, E.C. Jones, M. Ieong, R.J. Miller, Wilfried Haensch, H.‐S. Philip Wong	2003	25
14	High performance sub-40 nm CMOS devices on SOI for the 70 nm technology node (unknown), A. Ajmera, H. Park, D. Schepis, N. Zamdmer, K.A. Jenkins, Jean‐Olivier Plouchart, W.-H. Lee, J. Mezzapelle, J. Bruley, B. Doris, J.W. Sleight, S.K.H. Fung, S.H. Ku, A. Mocuta, Insoon Yang, P. Gilbert, K.P. Müller, P. Agnello, J.J. Welser	2002	22
15	A survey of non‐destructive surface characterization methods used to insure reliable gate oxide fabrication for silicon IC devices Surface and Interface Analysis ·Alain C. Diebold, B. Doris	1993	20
16	Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond Solid-State Electronics ·B. Doris, B. DeSalvo, Kangguo Cheng, P. Morin, M. Vinet	2015	20
17	Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- $\kappa$/Metal-Gate nFinFETs for High-Performance Logic Applications IEEE Electron Device Letters ·K. Maitra, A. Khakifirooz, Pranita Kulkarni, Veeraraghavan Basker, J. Faltermeier, Hemanth Jagannathan, Hemant Adhikari, Chun-Chen Yeh, N. Klymko, K. L. Saenger, T. Standaert, Robert J. Miller, B. Doris, Vamsi Paruchuri, Dale McHerron, James P. O’Neil, Effendi Leobundung, Huiming Bu	2011	19
18	Vertical Slit FET at 7-nm Node and Beyond IEEE Transactions on Electron Devices ·Ping-Lin Yang, Terence B. Hook, P. Oldiges, B. Doris	2016	18
19	Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices Thin Solid Films ·N. Loubet, Thomas Adam, Mark Raymond, Qing Liu, Kangguo Cheng, Raghavasimhan Sreenivasan, A. Reznicek, Prasanna Khare, Walter Kleemeier, Vamsi Paruchuri, B. Doris, Ron Sampson	2011	18
20	(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations ECS Transactions ·Darsen D. Lu, P. Morin, Bhagawan Sahu, Terence B. Hook, Pouya Hashemi, A. Scholze, Bomsoo Kim, Pranita Kerber, A. Khakifirooz, P. Oldiges, K. Rim, B. Doris	2014	14

About B. Doris

B. Doris is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Computational Mechanics and Surfaces, Coatings and Films, having authored 63 papers that have together received 1.5k indexed citations. Recurring topics across this work include Semiconductor materials and devices (46 papers), Advancements in Semiconductor Devices and Circuit Design (44 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers), Silicon Carbide Semiconductor Technologies (9 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Nanowire Synthesis and Applications (6 papers), Silicon and Solar Cell Technologies (6 papers) and Force Microscopy Techniques and Applications (4 papers). The work is most often cited by research in Structural Biology (75 citations), Electrical and Electronic Engineering (1.3k citations), Surfaces, Coatings and Films (75 citations), Atomic and Molecular Physics, and Optics (324 citations) and Materials Chemistry (368 citations). B. Doris has collaborated with scholars based in United States, France and Switzerland. Frequent co-authors include M. Ieong, K. Rim, J. Kedzierski, Min Yang, Vamsi Paruchuri, Alain C. Diebold, Vijay Narayanan, J. H. Stathis, M. Chudzik and Sufi Zafar. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Electrochemical and Solid-State Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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