D. Pogány

3.9k citations

208 papers · 3.3k · h-index 33

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Acoustics and Ultrasonics top 2%

Papers in

Electrical and Electronic Engineering 193
- Semiconductor materials and devices 129
- Electrostatic Discharge in Electronics 91
- Integrated Circuits and Semiconductor Failure Analysis 70
- Advancements in Semiconductor Devices and Circuit Design 70
- Silicon Carbide Semiconductor Technologies 37
- Thin-Film Transistor Technologies 17
Condensed Matter Physics 75
- GaN-based semiconductor devices and materials 75

Co-authors: J. Kuzmı́k (46 shared papers)E. Gornik (87 shared papers)Clemens Ostermaier (36 shared papers)S. Bychikhin (57 shared papers)G. Strasser (34 shared papers)P. Lagger (11 shared papers)Gregor Pobegen (12 shared papers)N. Grandjean (21 shared papers)
Journals: Microelectronics Reliability (41 papers)IEEE Transactions on Electron Devices (17 papers)Applied Physics Letters (16 papers)Journal of Applied Physics (12 papers)Solid-State Electronics (10 papers)
Partner nations: Austria Germany Slovakia

In The Last Decade

D. Pogány

199 papers receiving 3.2k citations

Peers

Countries citing papers authored by D. Pogány

Since Specialization

Citations

This map shows the geographic impact of D. Pogány's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Pogány with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Pogány more than expected).

Fields of papers citing papers by D. Pogány

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Pogány. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Pogány. The network helps show where D. Pogány may publish in the future.

Co-authors

The 25 scholars most cited alongside D. Pogány, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. Pogány Line = papers co-authored together D. Pogány links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 208 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs P. Lagger, Clemens Ostermaier, Gregor Pobegen, D. Pogány	2012	120
2	InAlN/GaN HEMTs: a first insight into technological optimization IEEE Transactions on Electron Devices ·J. Kuzmı́k, A. Kostopoulos, Г. Константинидис, J.‐F. Carlin, A. Georgakilas, D. Pogány	2006	117
3	Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments IEEE Transactions on Electron Devices ·P. Lagger, Maria Reiner, D. Pogány, Clemens Ostermaier	2014	93
4	Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors Journal of Applied Physics ·J. Kuzmı́k, G. Pozzovivo, Clemens Ostermaier, G. Strasser, D. Pogány, E. Gornik, J.‐F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean	2009	90
5	Pump-Controlled Directional Light Emission from Random Lasers Physical Review Letters ·Thomas Hisch, Matthias Liertzer, D. Pogány, Florian Mintert, Stefan Rotter	2013	90
6	Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$ IEEE Transactions on Electron Devices ·J. Kuzmı́k, Gianmauro Pozzovivo, S. Abermann, Jean-François Carlin, M. Gonschorek, E. Feltin, N. Grandjean, E. Bertagnolli, G. Strasser, D. Pogány	2008	88
7	Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on Silicon IEEE Transactions on Electron Devices ·J. Kuzmı́k, S. Bychikhin, Martin Neuburger, A. Dadgar, A. Krost, E. Kohn, D. Pogány	2005	73
8	Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors Applied Physics Letters ·G. Pozzovivo, J. Kuzmı́k, S. Golka, W. Schrenk, G. Strasser, D. Pogány, K. Čičo, M. Ťapajna, K. Fröhlich, J.‐F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean	2007	68
9	Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes Journal of Applied Physics ·S. Bychikhin, D. Pogány, L.K.J. Vandamme, Gaudenzio Meneghesso, Enrico Zanoni	2005	67
10	MOCVD of HfO₂ and ZrO₂ high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs Semiconductor Science and Technology ·S. Abermann, G. Pozzovivo, J. Kuzmı́k, G. Strasser, D. Pogány, J.‐F. Carlin, N. Grandjean, E. Bertagnolli	2007	61
11	Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress Applied Physics Letters ·P. Lagger, P. Steinschifter, Maria Reiner, M. Stadtmüller, Guenter Denifl, Andreas Naumann, Johannes Müller, L. Wilde, Jonas Sundqvist, D. Pogány, Clemens Ostermaier	2014	60
12	Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods Journal of Applied Physics ·J. Kuzmı́k, S. Bychikhin, D. Pogány, C. Gaquière, E. Pichonat, E. Morvan	2007	59
13	Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation IEEE Electron Device Letters ·Clemens Ostermaier, G. Pozzovivo, J.‐F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. DeJaeger, K. Čičo, K. Fröhlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogány, J. Kuzmı́k	2009	53
14	Gate‐lag and drain‐lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs physica status solidi (a) ·J. Kuzmı́k, J.‐F. Carlin, M. Gonschorek, A. Kostopoulos, Г. Константинидис, G. Pozzovivo, S. Golka, A. Georgakilas, N. Grandjean, G. Strasser, D. Pogány	2007	50
15	Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry IEEE Transactions on Electron Devices ·D. Pogány, S. Bychikhin, C. Fürböck, Martin Litzenberger, E. Gornik, G. Groos, Kai Esmark, M. Stecher	2002	48
16	Electrostatic discharge effects in AlGaN/GaN high-electron-mobility transistors Applied Physics Letters ·J. Kuzmı́k, D. Pogány, E. Gornik, P. Javorka, P. Kordoš	2003	47
17	Self-Heating in GaN Transistors Designed for High-Power Operation IEEE Transactions on Electron Devices ·J. Kuzmı́k, M. Ťapajna, L. Válik, Marián Molnár, D. Donoval, Clément Fleury, D. Pogány, G. Strasser, Oliver Hilt, Frank Brunner, Joachim Würfl	2014	46
18	Effect of Carbon Doping on Charging/Discharging Dynamics and Leakage Behavior of Carbon-Doped GaN IEEE Transactions on Electron Devices ·Christian Koller, Gregor Pobegen, Clemens Ostermaier, D. Pogány	2018	45
19	Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states Journal of Applied Physics ·Mattia Capriotti, P. Lagger, Clément Fleury, Martin Oposich, Ole Bethge, Clemens Ostermaier, G. Strasser, D. Pogány	2015	44
20	Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al₂O₃/InAlN/GaN heterostructures Semiconductor Science and Technology ·M. Ťapajna, K. Čičo, J. Kuzmı́k, D. Pogány, G. Pozzovivo, G. Strasser, (unknown), N. Grandjean, K. Fröhlich	2009	40

About D. Pogány

D. Pogány is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 208 papers that have together received 3.3k indexed citations. Recurring topics across this work include Semiconductor materials and devices (129 papers), Electrostatic Discharge in Electronics (91 papers), GaN-based semiconductor devices and materials (75 papers), Integrated Circuits and Semiconductor Failure Analysis (70 papers), Advancements in Semiconductor Devices and Circuit Design (70 papers), Silicon Carbide Semiconductor Technologies (37 papers), Ga2O3 and related materials (26 papers) and Thin-Film Transistor Technologies (17 papers). The work is most often cited by research in Condensed Matter Physics (1.9k citations), Acoustics and Ultrasonics (68 citations), Electrical and Electronic Engineering (2.7k citations), Electronic, Optical and Magnetic Materials (797 citations) and Atomic and Molecular Physics, and Optics (563 citations). D. Pogány has collaborated with scholars based in Austria, Germany and Slovakia. Frequent co-authors include J. Kuzmı́k, E. Gornik, Clemens Ostermaier, S. Bychikhin, G. Strasser, P. Lagger, Gregor Pobegen, N. Grandjean, M. Stecher and G. Pozzovivo. Their work appears in journals such as Microelectronics Reliability, IEEE Transactions on Electron Devices, Applied Physics Letters, Journal of Applied Physics and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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