M. Ťapajna

2.1k citations

90 papers · 1.8k · h-index 24

Impact in

Condensed Matter Physics top 1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 5%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 68
- Semiconductor materials and devices 66
- Advancements in Semiconductor Devices and Circuit Design 12
- Ferroelectric and Negative Capacitance Devices 10
- Advanced Memory and Neural Computing 8
- Integrated Circuits and Semiconductor Failure Analysis 7
Condensed Matter Physics 47
- GaN-based semiconductor devices and materials 46

Co-authors: J. Kuzmı́k (30 shared papers)Martin Kuball (15 shared papers)K. Fröhlich (35 shared papers)Umesh K. Mishra (7 shared papers)K. Hušeková (28 shared papers)Oliver Hilt (4 shared papers)Joachim Würfl (3 shared papers)Edmund Dobročka (24 shared papers)
Journals: Applied Surface Science (10 papers)Applied Physics Letters (10 papers)physica status solidi (a) (5 papers)Materials Science in Semiconductor Processing (4 papers)Semiconductor Science and Technology (4 papers)
Partner nations: Slovakia United Kingdom Germany

In The Last Decade

M. Ťapajna

86 papers receiving 1.7k citations

Peers

Countries citing papers authored by M. Ťapajna

Since Specialization

Citations

This map shows the geographic impact of M. Ťapajna's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Ťapajna with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Ťapajna more than expected).

Fields of papers citing papers by M. Ťapajna

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Ťapajna. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Ťapajna. The network helps show where M. Ťapajna may publish in the future.

Co-authors

The 25 scholars most cited alongside M. Ťapajna, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Ťapajna Line = papers co-authored together M. Ťapajna links everyone, so they are left out of the graph.

All Works

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#	Work
1	Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress IEEE Electron Device Letters ·M. Ťapajna, Oliver Hilt, Eldad Bahat‐Treidel, Joachim Würfl, J. Kuzmı́k	2016	138
2	A comprehensive analytical model for threshold voltage calculation in GaN based metal-oxide-semiconductor high-electron-mobility transistors Applied Physics Letters ·M. Ťapajna, J. Kuzmı́k	2012	134
3	Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress IEEE Electron Device Letters ·M. Ťapajna, R. Simms, Yi Pei, Umesh K. Mishra, Martin Kuball	2010	122
4	Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors Applied Physics Letters ·M. Ťapajna, Stephen W. Kaun, Man Hoi Wong, Feng Gao, Tomás Palacios, Umesh K. Mishra, James S. Speck, Martin Kuball	2011	78
5	Growth of High-Dielectric-Constant TiO[sub 2] Films in Capacitors with RuO[sub 2] Electrodes Electrochemical and Solid-State Letters ·K. Fröhlich, M. Ťapajna, A. Rosová, Edmund Dobročka, K. Hušeková, Jaan Aarik, Aleks Aidla	2008	73
6	AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes Microelectronics Reliability ·Martin Kuball, M. Ťapajna, R. Simms, Mustapha Faqir, Umesh K. Mishra	2010	70
7	Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors Applied Physics Letters ·G. Pozzovivo, J. Kuzmı́k, S. Golka, W. Schrenk, G. Strasser, D. Pogány, K. Čičo, M. Ťapajna, K. Fröhlich, J.‐F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean	2007	68
8	Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors Applied Physics Letters ·M. Ťapajna, Oliver Hilt, Eldad Bahat‐Treidel, Joachim Würfl, J. Kuzmı́k	2015	57
9	Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors Applied Physics Letters ·M. Ťapajna, M. Jurkovič, L. Válik, Š. Haščı́k, D. Gregušová, Frank Brunner, E.-M. Cho, J. Kuzmı́k	2013	53
10	Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations Journal of Applied Physics ·M. Ťapajna, M. Jurkovič, L. Válik, Š. Haščı́k, D. Gregušová, Frank Brunner, E.-M. Cho, Tamotsu Hashizume, J. Kuzmı́k	2014	51
11	Self-Heating in GaN Transistors Designed for High-Power Operation IEEE Transactions on Electron Devices ·J. Kuzmı́k, M. Ťapajna, L. Válik, Marián Molnár, D. Donoval, Clément Fleury, D. Pogány, G. Strasser, Oliver Hilt, Frank Brunner, Joachim Würfl	2014	46
12	Epitaxial growth of high-κ TiO2 rutile films on RuO2 electrodes Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·K. Fröhlich, Jaan Aarik, M. Ťapajna, A. Rosová, Aleks Aidla, Edmund Dobročka, K. Hušková	2009	46
13	Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress Applied Physics Letters ·M. Ťapajna, Umesh K. Mishra, Martin Kuball	2010	42
14	Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al₂O₃/InAlN/GaN heterostructures Semiconductor Science and Technology ·M. Ťapajna, K. Čičo, J. Kuzmı́k, D. Pogány, G. Pozzovivo, G. Strasser, J.‐F. Carlin, N. Grandjean, K. Fröhlich	2009	40
15	Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·M. Ťapajna, N. Killat, V. Palankovski, D. Gregušová, K. Čičo, J.‐F. Carlin, N. Grandjean, Martin Kuball, J. Kuzmı́k	2014	37
16	Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier Electronics Letters ·N. Killat, M. Ťapajna, Mustapha Faqir, Tomás Palacios, Martin Kuball	2011	33
17	Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·K. Čičo, K. Hušeková, M. Ťapajna, D. Gregušová, R. Stoklas, J. Kuzmı́k, J.‐F. Carlin, N. Grandjean, D. Pogány, K. Fröhlich	2011	31
18	Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties Applied Surface Science ·M. Ťapajna, R. Stoklas, D. Gregušová, Filip Gucmann, K. Hušeková, Š. Haščı́k, K. Fröhlich, L. Tóth, B. Pécz, Frank Brunner, J. Kuzmı́k	2017	28
19	Growth of α- and β-Ga ₂ O ₃ epitaxial layers on sapphire substrates using liquid-injection MOCVD Semiconductor Science and Technology ·Fridrich Egyenes, Filip Gucmann, K. Hušeková, Edmund Dobročka, Michal Sobota, Miroslav Mikolášek, K. Fröhlich, M. Ťapajna	2020	26
20	Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth Applied Physics Letters ·D. Gregušová, M. Jurkovič, Š. Haščı́k, M. Blaho, Alena Seifertová, J. Fedor, M. Ťapajna, K. Fröhlich, Peter Vogrinčič, Jozef Liday, Joff Derluyn, Marianne Germain, J. Kuzmı́k	2014	26

About M. Ťapajna

M. Ťapajna is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry and Mechanics of Materials, having authored 90 papers that have together received 1.8k indexed citations. Recurring topics across this work include Semiconductor materials and devices (66 papers), GaN-based semiconductor devices and materials (46 papers), Ga2O3 and related materials (37 papers), ZnO doping and properties (16 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers), Ferroelectric and Negative Capacitance Devices (10 papers), Advanced Memory and Neural Computing (8 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). The work is most often cited by research in Condensed Matter Physics (1.3k citations), Electronic, Optical and Magnetic Materials (711 citations), Electrical and Electronic Engineering (1.3k citations), Materials Chemistry (557 citations) and Atomic and Molecular Physics, and Optics (262 citations). M. Ťapajna has collaborated with scholars based in Slovakia, United Kingdom and Germany. Frequent co-authors include J. Kuzmı́k, Martin Kuball, K. Fröhlich, Umesh K. Mishra, K. Hušeková, Oliver Hilt, Joachim Würfl, Edmund Dobročka, R. Simms and Eldad Bahat‐Treidel. Their work appears in journals such as Applied Surface Science, Applied Physics Letters, physica status solidi (a), Materials Science in Semiconductor Processing and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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