S. Abermann

821 citations

39 papers · 686 · h-index 16

Impact in

Condensed Matter Physics top 10%
- GaN-based semiconductor devices and materials
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Chalcogenide Semiconductor Thin Films

Papers in

Electrical and Electronic Engineering 36
- Semiconductor materials and devices 31
- Advancements in Semiconductor Devices and Circuit Design 10
- Ferroelectric and Negative Capacitance Devices 8
- Integrated Circuits and Semiconductor Failure Analysis 6
- Advanced Memory and Neural Computing 5
Materials Chemistry 15
- Electronic and Structural Properties of Oxides 9

Co-authors: E. Bertagnolli (32 shared papers)Ole Bethge (23 shared papers)Christoph Henkel (21 shared papers)G. Pozzovivo (7 shared papers)G. Strasser (5 shared papers)D. Pogány (4 shared papers)N. Grandjean (4 shared papers)J. Kuzmı́k (4 shared papers)
Journals: Microelectronic Engineering (4 papers)Applied Physics Letters (3 papers)Journal of The Electrochemical Society (3 papers)Applied Surface Science (2 papers)IEEE Transactions on Electron Devices (2 papers)
Partner nations: Austria Switzerland Germany

In The Last Decade

S. Abermann

39 papers receiving 664 citations

Peers

Countries citing papers authored by S. Abermann

Since Specialization

Citations

This map shows the geographic impact of S. Abermann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Abermann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Abermann more than expected).

Fields of papers citing papers by S. Abermann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Abermann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Abermann. The network helps show where S. Abermann may publish in the future.

Co-authors

The 25 scholars most cited alongside S. Abermann, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Abermann Line = papers co-authored together S. Abermann links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 39 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Non-vacuum processed next generation thin film photovoltaics: Towards marketable efficiency and production of CZTS based solar cells Solar Energy ·S. Abermann	2013	111
2	Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$ IEEE Transactions on Electron Devices ·J. Kuzmı́k, Gianmauro Pozzovivo, S. Abermann, Jean-François Carlin, M. Gonschorek, E. Feltin, N. Grandjean, E. Bertagnolli, G. Strasser, D. Pogány	2008	86
3	MOCVD of HfO₂ and ZrO₂ high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs Semiconductor Science and Technology ·S. Abermann, G. Pozzovivo, J. Kuzmı́k, G. Strasser, D. Pogány, J.‐F. Carlin, N. Grandjean, E. Bertagnolli	2007	61
4	Photovoltaic properties of thin film heterojunctions with cupric oxide absorber Journal of Renewable and Sustainable Energy ·Théodoros Dimopoulos, Antun Peić, Paul Müllner, Markus Neuschitzer, Roland Resel, S. Abermann, Markus Postl, Emil List, Sergii Yakunin, (unknown), H. Brückl	2013	56
5	Atomic layer-deposited platinum in high-k/metal gate stacks Semiconductor Science and Technology ·Christoph Henkel, S. Abermann, Ole Bethge, E. Bertagnolli	2009	34
6	Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness Applied Physics Letters ·S. Abermann, Ole Bethge, Christoph Henkel, E. Bertagnolli	2009	32
7	Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric Applied Surface Science ·Ole Bethge, Christoph Henkel, S. Abermann, G. Pozzovivo, Michael Stöger‐Pollach, Wolfgang Werner, J. Smoliner, E. Bertagnolli	2011	25
8	ALD grown bilayer junction of ZnO:Al and tunnel oxide barrier for SIS solar cell Solar Energy Materials and Solar Cells ·Ole Bethge, M. Nobile, S. Abermann, Markus Glaser, E. Bertagnolli	2013	24
9	Effect of AZO Substrates on Self‐Seeded Electrochemical Growth of Vertically Aligned ZnO Nanorod Arrays and Their Optical Properties Journal of Nanomaterials ·Antun Peić, Théodoros Dimopoulos, Roland Resel, S. Abermann, Markus Postl, Emil List, H. Brückl	2012	23
10	Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium Applied Surface Science ·S. Abermann, Christoph Henkel, Ole Bethge, G. Pozzovivo, P. Klang, E. Bertagnolli	2010	21
11	Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality Applied Physics Letters ·Christoph Henkel, Ole Bethge, S. Abermann, S. Puchner, Herbert Hutter, E. Bertagnolli	2010	20
12	Ge p-MOSFETs With Scaled ALD $\hbox{La}_{2} \hbox{O}_{3}/\hbox{ZrO}_{2}$ Gate Dielectrics IEEE Transactions on Electron Devices ·Christoph Henkel, S. Abermann, Ole Bethge, G. Pozzovivo, P. Klang, Manfred Reiche, E. Bertagnolli	2010	18
13	Process temperature dependent high frequency capacitance-voltage response of ZrO2/GeO2/germanium capacitors Applied Physics Letters ·Ole Bethge, S. Abermann, Christoph Henkel, Christoph J. Straif, Herbert Hutter, J. Smoliner, E. Bertagnolli	2010	18
14	Ion bombardment induced morphology modifications on self-organized semiconductor surfaces Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Christian Höfer, S. Abermann, Christian Teichert, T. Bobek, H. Kurz, K. Lyutovich, E. Kasper	2003	18
15	Schottky barrier SOI-MOSFETs with high-k La2O3/ZrO2 gate dielectrics Microelectronic Engineering ·Christoph Henkel, S. Abermann, Ole Bethge, G. Pozzovivo, P. Klang, Michael Stöger‐Pollach, E. Bertagnolli	2010	17
16	Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO ₂ high- k gate dielectrics Electronics Letters ·S. Abermann, G. Pozzovivo, J. Kuzmı́k, Clemens Ostermaier, Christoph Henkel, Ole Bethge, G. Strasser, D. Pogány, J.‐F. Carlin, N. Grandjean, E. Bertagnolli	2009	16
17	Layer-by-layer assembly of titania nanoparticles based ionic networks Chemical Communications ·B. Basnar, Marco Litschauer, S. Abermann, E. Bertagnolli, G. Strasser, Marie‐Alexandra Neouze	2010	15
18	Interface States and Trapping Effects in Al₂O₃- and ZrO₂/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures Japanese Journal of Applied Physics ·M. Ťapajna, J. Kuzmı́k, K. Čičo, D. Pogány, Gianmauro Pozzovivo, G. Strasser, S. Abermann, E. Bertagnolli, J.‐F. Carlin, N. Grandjean, K. Fröhlich	2009	14
19	Effect of thermal annealing in vacuum on the photovoltaic properties of electrodeposited Cu₂O-absorber solar cell EPJ Photovoltaics ·Théodoros Dimopoulos, Antun Peić, S. Abermann, Markus Postl, Emil List, Roland Resel	2014	11
20	Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-κ dielectrics Microelectronics Reliability ·S. Abermann, J.K. Efavi, Gustaf Sjöblom, Max C. Lemme, Jörgen Olsson, E. Bertagnolli	2007	8

About S. Abermann

S. Abermann is a scholar working on Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 39 papers that have together received 686 indexed citations. Recurring topics across this work include Semiconductor materials and devices (31 papers), Advancements in Semiconductor Devices and Circuit Design (10 papers), Electronic and Structural Properties of Oxides (9 papers), Copper Interconnects and Reliability (9 papers), Ferroelectric and Negative Capacitance Devices (8 papers), Semiconductor materials and interfaces (7 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers) and Advanced Memory and Neural Computing (5 papers). The work is most often cited by research in Condensed Matter Physics (162 citations), Electrical and Electronic Engineering (545 citations), Materials Chemistry (368 citations), Electronic, Optical and Magnetic Materials (122 citations) and Atomic and Molecular Physics, and Optics (124 citations). S. Abermann has collaborated with scholars based in Austria, Switzerland and Germany. Frequent co-authors include E. Bertagnolli, Ole Bethge, Christoph Henkel, G. Pozzovivo, G. Strasser, D. Pogány, N. Grandjean, J. Kuzmı́k, Emil List and Théodoros Dimopoulos. Their work appears in journals such as Microelectronic Engineering, Applied Physics Letters, Journal of The Electrochemical Society, Applied Surface Science and IEEE Transactions on Electron Devices.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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