K. Čičo

697 citations

25 papers · 627 · h-index 15

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 19
- GaN-based semiconductor devices and materials 19
Electrical and Electronic Engineering 19
- Semiconductor materials and devices 17
- Advancements in Semiconductor Devices and Circuit Design 3
- Ferroelectric and Negative Capacitance Devices 2
- Silicon Carbide Semiconductor Technologies 2

Co-authors: D. Gregušová (13 shared papers)K. Fröhlich (18 shared papers)R. Stoklas (7 shared papers)P. Kordoš (6 shared papers)J. Kuzmı́k (14 shared papers)N. Grandjean (13 shared papers)D. Pogány (11 shared papers)J. Novák (4 shared papers)
Journals: Applied Physics Letters (3 papers)IEEE Electron Device Letters (3 papers)Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2 papers)IEEE Transactions on Electron Devices (2 papers)Semiconductor Science and Technology (2 papers)
Partner nations: Slovakia Switzerland Austria

In The Last Decade

K. Čičo

25 papers receiving 610 citations

Peers

Countries citing papers authored by K. Čičo

Since Specialization

Citations

This map shows the geographic impact of K. Čičo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Čičo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Čičo more than expected).

Fields of papers citing papers by K. Čičo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Čičo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Čičo. The network helps show where K. Čičo may publish in the future.

Co-authors

The 25 scholars most cited alongside K. Čičo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K. Čičo Line = papers co-authored together K. Čičo links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor Applied Physics Letters ·P. Kordoš, D. Gregušová, R. Stoklas, K. Čičo, J. Novák	2007	77
2	Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors Applied Physics Letters ·G. Pozzovivo, J. Kuzmı́k, S. Golka, W. Schrenk, G. Strasser, D. Pogány, K. Čičo, M. Ťapajna, K. Fröhlich, J.‐F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean	2007	69
3	AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al₂O₃ gate oxide Semiconductor Science and Technology ·D. Gregušová, R. Stoklas, K. Čičo, T. Lalinský, P. Kordoš	2007	65
4	Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation IEEE Electron Device Letters ·Clemens Ostermaier, G. Pozzovivo, J.‐F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. DeJaeger, K. Čičo, K. Fröhlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogány, J. Kuzmı́k	2009	55
5	Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al₂O₃/InAlN/GaN heterostructures Semiconductor Science and Technology ·M. Ťapajna, K. Čičo, J. Kuzmı́k, D. Pogány, G. Pozzovivo, G. Strasser, (unknown), N. Grandjean, K. Fröhlich	2009	41
6	Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors IEEE Transactions on Electron Devices ·M. Ťapajna, N. Killat, V. Palankovski, D. Gregušová, K. Čičo, J.‐F. Carlin, N. Grandjean, Martin Kuball, J. Kuzmı́k	2014	39
7	Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region IEEE Electron Device Letters ·M. Jurkovič, D. Gregušová, V. Palankovski, Š. Hašc̆ı́k, M. Blaho, K. Čičo, K. Fröhlich, J.‐F. Carlin, N. Grandjean, J. Kuzmı́k	2013	36
8	RF Performance of InAlN/GaN HFETs and MOSHFETs With <formula formulatype="inline"><tex Notation="TeX"> $f_{T} \times L_{G}$</tex></formula> up to 21 <formula formulatype="inline"><tex Notation="TeX">$\hbox{GHz}\cdot \mu\hbox{m}$</tex> </formula> IEEE Electron Device Letters ·P. Kordoš, M. Mikulics, Andrew J. Fox, D. Gregušová, K. Čičo, J.‐F. Carlin, N. Grandjean, J. Novák, K. Fröhlich	2010	33
9	Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·K. Čičo, K. Hušeková, M. Ťapajna, D. Gregušová, R. Stoklas, J. Kuzmı́k, J.‐F. Carlin, N. Grandjean, D. Pogány, K. Fröhlich	2011	32
10	Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier IEEE Transactions on Electron Devices ·J. Kuzmı́k, Clemens Ostermaier, G. Pozzovivo, B. Basnar, W. Schrenk, J.‐F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, Y. Douvry, Christophe Gaquière, Jean-Claude de Jaeger, K. Čičo, K. Fröhlich, J. Škriniarová, Jaroslav Kováč, G. Strasser, D. Pogány, E. Gornik	2010	32
11	Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition Materials Science in Semiconductor Processing ·K. Fröhlich, R. Lupták, Edmund Dobročka, K. Hušeková, K. Čičo, A. Rosová, Mindaugas Lukosius, A. Abrutis, P. Písečný, J.P. Espinós	2006	21
12	Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition Applied Physics Letters ·P. Kordoš, R. Kúdela, R. Stoklas, K. Čičo, M. Mikulics, D. Gregušová, J. Novák	2012	17
13	Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation Solid-State Electronics ·K. Čičo, D. Gregušová, J. Kuzmı́k, M. Jurkovič, A. Alexewicz, M.A. Poisson, D. Pogány, G. Strasser, S.L. Delage, K. Fröhlich	2011	17
14	Optimization and performance of Al2O3/GaN metal–oxide–semiconductor structures Microelectronics Reliability ·K. Čičo, J. Kuzmı́k, D. Gregušová, R. Stoklas, T. Lalinský, A. Georgakilas, D. Pogány, K. Fröhlich	2007	16
15	Interface States and Trapping Effects in Al₂O₃- and ZrO₂/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures Japanese Journal of Applied Physics ·M. Ťapajna, J. Kuzmı́k, K. Čičo, D. Pogány, Gianmauro Pozzovivo, G. Strasser, S. Abermann, E. Bertagnolli, J.‐F. Carlin, N. Grandjean, K. Fröhlich	2009	14
16	Influence of GaN capping on performance of InAlN/AlN/GaN MOS‐HEMT with Al₂O₃ gate insulation grown by CVD Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·G. Pozzovivo, J. Kuzmı́k, S. Golka, K. Čičo, K. Fröhlich, J.‐F. Carlin, M. Gonschorek, N. Grandjean, W. Schrenk, G. Strasser, D. Pogány	2008	13
17	In Al N ∕ Ga N metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·K. Čičo, J. Kuzmı́k, Jozef Liday, K. Hušeková, G. Pozzovivo, J.‐F. Carlin, N. Grandjean, D. Pogány, Peter Vogrinčič, K. Fröhlich	2009	11
18	Characterization of AlGaN/GaN MOSHFETs with Al₂O₃ as gate oxide Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·D. Gregušová, R. Stoklas, K. Čičo, G. Heidelberger, M. Marso, J. Novák, P. Kordoš	2007	11
19	Resistive switching in nonplanar HfO2-based structures with variable series resistance Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·K. Čičo, Peter Jančovič, J. Dérer, V. Šmatko, A. Rosová, M. Blaho, Boris Hudec, D. Gregušová, K. Fröhlich	2015	7
20	Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·K. Čičo, D. Gregušová, (unknown), J. Šoltýs, J. Kuzmı́k, J.‐F. Carlin, N. Grandjean, D. Pogány, K. Fröhlich	2009	7

About K. Čičo

K. Čičo is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry and Mechanics of Materials, having authored 25 papers that have together received 627 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (17 papers), Ga2O3 and related materials (11 papers), ZnO doping and properties (4 papers), Metal and Thin Film Mechanics (4 papers), Advancements in Semiconductor Devices and Circuit Design (3 papers), Ferroelectric and Negative Capacitance Devices (2 papers) and Silicon Carbide Semiconductor Technologies (2 papers). The work is most often cited by research in Condensed Matter Physics (543 citations), Electronic, Optical and Magnetic Materials (312 citations), Electrical and Electronic Engineering (472 citations), Atomic and Molecular Physics, and Optics (119 citations) and Materials Chemistry (148 citations). K. Čičo has collaborated with scholars based in Slovakia, Switzerland and Austria. Frequent co-authors include D. Gregušová, K. Fröhlich, R. Stoklas, P. Kordoš, J. Kuzmı́k, N. Grandjean, D. Pogány, J. Novák, J.‐F. Carlin and G. Strasser. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, IEEE Transactions on Electron Devices and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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